Semiconductor integrated circuit device and high frequency power amplifier module
View Patent ↗Switching characteristics in an SPDT switch are improved to reduce the rise delay in a low power slot following after a high power slot. Control terminals of an SPDT switch are respectively provided with backflow prevention circuits. The backflow prevention circuit is configured to have two transistors and a diode. In a transmission mode, for example, when a time slot where a high power passes through transistors is followed by a time slot where a low power passes through, the electric charges accumulated in the gates of the transistors are blocked. In the case where the transistors are in the OFF state, the electric charges accumulated in the gates of the transistors are immediately discharged to allow the transistors to be completely turned OFF.
1. A semiconductor integrated device used in mobile communications equipment, comprising:
a first terminal connected to an antenna;
a second terminal connected to a transmission circuit;
a third terminal connected to a reception circuit;
a switching transistor provided between said first terminal and said second terminal to switch connection between said first and second terminals;
a fourth terminal to which a control signal of said switching transistor is input;
a booster circuit for taking a transmission signal output through said switching transistor when a signal is input through said fourth terminal, generating a boosted voltage higher than the voltage level of the input signal, and applying the boosted voltage to a control terminal of said switching transistor; and
a voltage controller for performing control so that when the signal level of the transmission signal output through said switching transistor decreases, a drain voltage of said switching transistor is not higher than a gate voltage of said switching transistor.
2. The semiconductor integrated device used in mobile communications equipment according to claim 1 , wherein said switching transistor is a HEMT.
3. A semiconductor integrated device used in mobile communications equipment, comprising:
a first terminal connected to an antenna;
a second terminal connected to a transmission circuit;
a third terminal connected to a reception circuit;
a switching transistor provided between said first terminal and said second terminal to switch connection between said first and second terminals;
a fourth terminal to which a control signal of said switching transistor is input;
a booster circuit for taking a transmission signal output through said switching transistor when a signal is input through said fourth terminal, generating a boosted voltage higher than the voltage level of the input signal, and applying the boosted voltage to a control terminal of said switching transistor; and
a voltage controller for performing control so that when the signal level of the transmission signal output through said switching transistor decreases, a drain voltage of said switching transistor is not higher than a gate voltage of said switching transistor, and when said switching transistor does not operate, said voltage controller discharges the electric charge accumulated in the gate of said switching transistor.
4. The semiconductor integrated device used in mobile communications equipment according to claim 3 ,
wherein said voltage controller comprises:
a control signal supply section for outputting a control signal to said switching transistor, based on a control signal output to said control terminal from a control circuit for controlling said switching transistor;
a discharge block section for blocking the discharge of the electric charge accumulated in the gate of said switching transistor, when the signal level of the transmission signal output through said switching transistor decreases; and
a discharge section for discharging the electric charge accumulated in the gate of said switching transistor toward the reference potential, when said switching transistor does not operate.
5. A high frequency power amplifier module, comprising:
an antenna connection switching circuit; and
a high frequency power amplifier for receiving a transmission signal from a transmission circuit and supplying an amplified transmission signal to said antenna connection switching circuit,
said antenna connection switching circuit including:
a first terminal connected to an antenna;
a second terminal connected to said high frequency power amplifier;
a third terminal connected to a reception circuit;
a switching transistor provided between said first terminal and said second terminal to switch connection between said first and second terminals;
a fourth terminal to which a control signal of said switching transistor is input;
a booster circuit for taking a transmission signal output through said switching transistor when a signal is input through said fourth terminal, generating a boosted voltage higher than the voltage level of the input signal, and applying the boosted voltage to a control terminal of said switching transistor; and
a voltage controller for performing control so that when the signal level of the transmission signal output through said switching transistor decreases, a drain voltage of said switching transistor is not higher than a gate voltage of said switching transistor.
6. The high frequency power amplifier module according to claim 5 , wherein said switching transistor is a HEMT.
7. A high frequency power amplifier module, comprising:
an antenna connection switching circuit; and
a high frequency power amplifier for receiving a transmission signal from a transmission circuit and supplying an amplified transmission signal to said antenna connection switching circuit,
said antenna connection switching circuit including:
a first terminal connected to an antenna;
a second terminal connected to said high frequency power amplifier;
a third terminal connected to a reception circuit;
a switching transistor provided between said first terminal and said second terminal to switch connection between said first and second terminals;
a fourth terminal to which a control signal of said switching transistor is input;
a booster circuit for taking a transmission signal output through said switching transistor when a signal is input through said fourth terminal, generating a boosted voltage higher than the voltage level of the input signal, and applying the boosted voltage to a control terminal of said switching transistor; and
a voltage controller for performing control so that when the signal level of the transmission signal output through said switching transistor decreases, a drain voltage of said switching transistor is not higher than a gate voltage of said switching transistor, and when said switching transistor does not operate, said voltage controller discharges the electric charge accumulated in the gate of said switching transistor.
8. The high frequency power amplifier module according to claim 7 ,
wherein said voltage controller comprises:
a control signal supply section for outputting a control signal to said switching transistor, based on a control signal output to said control terminal from a control circuit for controlling said switching transistor;
a discharge block section for blocking the discharge of the electric charge accumulated in the gate of said switching transistor, when the signal level of the transmission signal output through said switching transistor decreases; and
a discharge section for discharging the electric charge accumulated in the gate of said switching transistor toward the reference potential, when said switching transistor does not operate.
9. The high frequency power amplifier module according to claim 8 ,
wherein said control signal supply section and said discharge section are provided in said antenna connection switching circuit, and
wherein said discharge block section is externally mounted on said antenna connection switching circuit.
10. The high frequency power amplifier module according to claim 7 , wherein said voltage controller is provided in said antenna connection switching circuit.