Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit
View Patent ↗In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
1. A semiconductor integrated circuit for high frequency power amplifier comprising:
a high frequency power amplifier circuit for amplifying a high frequency transmitting signal;
a first detection circuit for detecting an output of the high frequency power amplifier circuit, and generating a voltage corresponding to the output; and
a second detection circuit having detection sensitivity lower than detection sensitivity of the first detection circuit, in a low output level region, for executing detection operation upon receiving an output of the first detection circuit, and the output of the high frequency power amplifier circuit,
wherein a voltage or current, corresponding to an output of the second detection circuit is outputted.
2. A semiconductor integrated circuit for high frequency power amplifier according to claim 1 , further comprising:
a first input means for causing an AC component of the output of the high frequency power amplifier circuit to be inputted to the first detection circuit; and
a second input means for causing the AC component of the output of the high frequency power amplifier circuit to be inputted to the second detection circuit,
wherein the second input means is set larger in attenuation than the first input means, thereby causing the second detection circuit to have detection sensitivity lower than that of the first detection circuit, in the low output level region.
3. An integrated circuit for high frequency power amplifier according to claim 2 , wherein the first input means, and the second input means each are made up of a resistance element, and a capacitance element, forming a series circuit, and a resistance value of the resistance element of the second input means is set higher than a resistance value of the resistance element of the first input means, thereby causing a signal of the second input means to be greater in attenuation than a signal of the first input means.
4. A semiconductor integrated circuit for high frequency power amplifier comprising:
a high frequency power amplifier circuit for amplifying a high frequency transmitting signal;
a first detection circuit for detecting an output of the high frequency power amplifier circuit, and generating a voltage corresponding to the output; and
a second detection circuit for detecting the output of the high frequency power amplifier circuit as biased by the voltage outputted by the first detection circuit,
wherein a voltage or current, corresponding to an output of the second detection circuit is outputted.
5. A semiconductor integrated circuit for high frequency power amplifier according to claim 4 , further comprising:
a first input means for causing an AC component of the output of the high frequency power amplifier circuit to be inputted to the first detection circuit; and
a second input means for causing the AC component of the output of the high frequency power amplifier circuit to be inputted to the second detection circuit,
wherein the second input means is set larger in attenuation than the first input means, thereby causing the second detection circuit to have detection sensitivity lower than that of the first detection circuit, in a low output level region.
6. A semiconductor integrated circuit for high frequency power amplifier according to claim 5 , wherein the first input means, and the second input means each are made up of a resistance element, and a capacitance element, forming a series circuit, and a resistance value of the resistance element of the second input means is set higher than a resistance value of the resistance element of the first input means, thereby causing a signal of the second input means to be greater in attenuation than a signal of the first input means.
7. A semiconductor integrated circuit for high frequency power amplifier according to claim 4 , wherein the first detection circuit, and the second detection circuit each comprises a first transistor having a control terminal receiving an AC component of the output of the high frequency power amplifier circuit, a second transistor connected in series to the first transistor, a third transistor, together with the second transistor, constituting a current mirror circuit, and current-voltage conversion means for converting a current flowing through the third transistor into a voltage to be thereby outputted, and the first detection circuit has a resistance element connecting the first transistor to the second transistor, thereby causing the first detection circuit to become saturated at an earlier point in time than the second detection circuit.
8. A semiconductor integrated circuit for high frequency power amplifier according to claim 4 , further comprising a bias generation circuit for generating a bias voltage of the first detection circuit,
wherein a voltage which is obtained by subtracting the bias voltage from the output of the second detection circuit is outputted as a detection result.
9. A semiconductor integrated circuit for high frequency power amplifier according to claim 4 , further comprising:
a third detection circuit which detects an input of an amplifier transistor in the last stage of the high frequency power amplifier circuit, the third detection circuit being coupled to a control terminal of the amplifier transistor; and
a bias circuit which generates a bias voltage for the amplifier transistor,
wherein a voltage corresponding to the bias voltage and an output of the third detection circuit is inputted to the control terminal of the amplifier transistor, thereby causing an idling current corresponding to a level of the input high frequency signal to flow.
10. An electronic component for high frequency power amplifier, comprising a semiconductor integrated circuit for high frequency power amplifier according to claim 1 , and AC component extraction means provided on an output line of the high frequency power amplifier circuit, for extracting the AC component of the output of the high frequency power amplifier circuit, both constituents being mounted on one insulation board.
11. A wireless communication system comprising:
an electronic component for high frequency power amplifier according to claim 10 ;
a second electronic component having a transmitting-receiving switchover means for switching over between transmitting and receiving signals; and
a third electronic component for modulating a signal to be transmitted before inputting the signal to the electronic component for high frequency power amplifier,
wherein the output as detected is supplied from the electronic component for high frequency power amplifier to the third electronic component, and the third electronic component controls amplitude of the transmitting signal to be inputted to the electronic component for high frequency power amplifier on the basis of the output as detected and a signal indicating a request output level.