IP Library Granted Patent US 8,076,974
Granted Patent B2
US 8,076,974 · App. 12/980,627 · Granted Dec 13, 2011

Radio frequency (RF) power amplifier and RF power amplifier apparatus

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Quick Facts
Patent No.
US 8,076,974
App. No.
12/980,627
Granted
Dec 13, 2011
Kind
B2
Abstract

An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

Claims (24)

1. An RF power amplifier comprising:

a final stage amplifier stage which generates an RF transmit output signal;

a signal detector which detects an RF transmit output level;

a first detector;

a second detector, and

a control circuit,

wherein the final stage amplifier stage performs the saturation type nonlinear amplification and the non-saturation type linear amplification and includes:

a transistor, and

a load element,

wherein an RF detection signal outputted from the signal detector is supplied to the first detector, and an output voltage of the final stage transistor is supplied to the second detector,

wherein the first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification, and

wherein the second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

2. An RF power amplifier comprising:

a final stage amplifier stage which amplifies an RF signal to generate an RF transmit output signal supplied to an antenna of a communication terminal; and

a signal detector which detects the level of the RF transmit output signal,

a first detector,

a second detector, and

a controller or control circuit,

wherein the final stage amplifier stage includes a final stage transistor and a final stage load element and executes a first operation mode for saturation type nonlinear amplification and a second operation mode for non-saturation type linear amplification,

wherein the first detector is supplied with an RF detection signal from the signal detector, and

wherein the second detector is supplied with an output voltage of the final stage transistor.

3. An RF power amplifier according to claim 2 ,

wherein a first feedback control by the first detector and the control circuit reduces a variation in the RF transmit output signal generated from the final stage transistor responsive to a variation in load at the antenna in the first operation mode, and

wherein a second feedback control by the second detector and the control circuit reduces an increase in the output voltage of the final stage transistor responsive to an overload state of the antenna in the second operation mode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2012
From: RENESAS ELECTRONICS CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 027946/0388 →