IP Library Granted Patent US 7,227,415
Granted Patent B2
US 7,227,415 · App. 11/540,510 · Granted Jun 5, 2007

High frequency power amplifier circuit and radio communication system

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,227,415
App. No.
11/540,510
Granted
Jun 5, 2007
Kind
B2
Abstract

Providing a high frequency power amplifier circuit and a radio communication system which can control output power by a power voltage, produce sufficient output power in high regions of demanded output power and improve power efficiency in low regions of demanded output power. In a high frequency power amplifier circuit (RF power module) which comprises two or more cascaded FETs for amplification and controls output power by controlling power voltages of the FETs for amplification to gate terminals of which bias voltages of a predetermined level are applied, different transistors for power voltage control are provided for a last-stage FET for amplification and preceding-stage FETs for amplification. The transistors for power voltage control generate and apply the power voltage so that the preceding-stage FETs for amplification saturate when a demanded output level is relatively low.

Claims (28)

1. A power amplifier module for wireless communication, comprising:

an amplifying means for generating a radio frequency signal to be transmitted and which includes amplifying stages cascaded in series;

a bias means for supplying bias voltages set to predetermined values to each of the amplifying stages; and

a power source control means for generating a first voltage for a final one of the amplifying stages which outputs the radio frequency signal and for generating a second voltage for preceding ones of the amplifying stages which receives a signal to be amplified by the amplifying means; and

a insulating substrate for mounting the amplifying means, bias means and power source control means,

wherein the power source control means includes a first control means for controlling the first voltage and a second control means which is different from the first control means for controlling the second voltage, and

wherein the power source control means sets the second voltage to determine a current flow on the preceding ones of the amplifying stages in a saturated state, when the first voltage is set to determine a current flow on the final one of the amplifying stages in a linear state.

2. A power amplifier module for wireless communication according to claim 1 , wherein

each of the amplifying stages consists of a field effect transistor, and

the power source control means includes a first differential circuit which receives an output power instruction signal and the first voltage and supplies a first control voltage to the first control means, and a second differential circuit which receives the output power instruction signal and the second voltage and supplies a second control voltage to the second control means.

3. A power amplifier module for wireless communication according to claim 1 , wherein

gate widths of the field effect transistors in the amplifying stages increase in order from the preceding ones of the amplifying stages to the final one of the amplifying stages such that the current flows on the preceding ones of the amplifying stages in the saturated state, and the current flows on the final one of the amplifying stages in the linear state.

4. A power amplifier module for wireless communication according to claim 1 , wherein

the bias voltages increase in order from the preceding ones of the amplifying stages to the final one of the amplifying stages such that the current flows on the preceding ones of the amplifying stages in the saturated state, and the current flows on the final one of the amplifying stages in the linear state.

5. A power amplifier module for wireless communication, comprising:

an amplifying circuit that generates a radio frequency signal, the amplifying circuit including amplifying stages cascaded in series;

a bias circuit that supplies bias voltages set to predetermined values to each of the amplifying stages; and

a power source control circuit that generates a first voltage for a final stage of the amplifying stages which outputs the radio frequency signal and a second voltage for preceding stages of the amplifying stages, each of the preceding stages receiving a signal to be amplified by the amplifying circuit; and

a insulating substrate on which the amplifying circuit, bias circuit and power source control circuit are mounted, wherein

the power source control circuit includes a first control circuit that controls the first voltage and a second control circuit that is different from the first control circuit and that controls the second voltage, and

the power source control circuit sets the second voltage to determine a current flow in the preceding stages of the amplifying stages in a saturated state, when the first voltage is set to determine a current flow in the final stage of the amplifying stages in a linear state.

6. A power amplifier module for wireless communication according to claim 5 , wherein

each of the amplifying stages consists of a field effect transistor, and

the power source control means includes a first differential circuit which receives an output power instruction signal and the first voltage and supplies a first control voltage to the first control circuit, and a second differential circuit which receives the output power instruction signal and the second voltage and supplies a second control voltage to the second control circuit.

7. A power amplifier module for wireless communication according to claim 5 , wherein

gate widths of the field effect transistors in the amplifying stages increase in order from the preceding stages to the final stage of the amplifying stages such that the current flows in the preceding stages in the saturated state, and the current flows in the final stage in the linear state.

8. A power amplifier module for wireless communication according to claim 5 , wherein

the bias voltages increase in order from the preceding stages to the final stage such that the current flows in the preceding stages in the saturated state, and the current flows in the final stage in the linear state.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2012
From: RENESAS ELECTRONICS CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 027946/0388 →
MERGER Recorded Jul 7, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024662/0280 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2006
From: TAHARA, KENJI; TSUTSUI, TAKAYUKI; ADACHI, TETSUAKI
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 018376/0056 →