Semiconductor device and manufacturing the same
View Patent ↗A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
1. A semiconductor device comprising:
a first capacitor element including a first lower electrode, a first upper electrode and a first insulating film formed between the first lower electrode and the first upper electrode, wherein the first upper electrode is formed over a semiconductor substrate;
a first interlayer insulating film formed over the first capacitor element and over a semiconductor substrate;
an inductor formed over the first interlayer insulating film; and
a second capacitor element formed over the first interlayer insulating film, the second capacitor element including a second lower electrode, a second upper electrode and a second insulating film formed between the second lower electrode and the second upper electrode,
wherein a first circuit operating in a first frequency band is arranged on the semiconductor substrate and includes the first capacitor element,
wherein a second circuit operating in a second frequency band is arranged on the semiconductor substrate and includes the second capacitor element,
wherein the frequency included in the first frequency band is lower than the frequency included in the second frequency band.
2. A semiconductor device according to claim 1 ,
wherein the second circuit includes a first amplification stage and a second amplification stage,
wherein the first amplification stage is electrically coupled to the second amplification stage through an inter-stage matching circuit, and
wherein the inter-stage matching circuit includes the second capacitor element and the inductor.
3. A semiconductor device according to claim 2 ,
wherein the first circuit comprises an analog circuit,
wherein the first amplification stage and the second amplification stage comprises a transmission power amplifier.
4. A semiconductor device according to claim 3 ,
wherein the second circuit includes a power MISFET including a gate electrode,
wherein the first circuit includes an MISFET including a gate electrode, and
wherein a gate length of the MISFET is greater than a gate length of the power MISFET.
5. A semiconductor device according to claim 2 ,
wherein a second interlayer insulating film is formed over the second upper electrode, and wherein the inductor is formed over the second interlayer insulating film.
6. A semiconductor device according to claim 1 ,
wherein the first circuit comprises an analog circuit and includes an MISFET having a gate electrode,
wherein the second circuit comprises a transmission power amplifier and includes a power MISFET having a gate electrode, and
wherein a gate length of the MISFET is greater than a gate length of the power MISFET.
7. A semiconductor device according to claim 1 ,
wherein a thickness of the second insulating film is greater than a thickness of the first insulating film.
8. A semiconductor device according to claim 1 ,
wherein each of the second lower electrode and the second upper electrode includes a metal film.
9. A semiconductor device according to claim 8 ,
wherein the first upper electrode includes of a silicon film.
10. A semiconductor device comprising:
a first capacitor element including a first lower electrode, a first upper electrode and a first insulating film formed between the first lower electrode and the first upper electrode,
wherein the first upper electrode is formed over a semiconductor substrate;
a first interlayer insulating film formed over the first capacitor element and over a semiconductor substrate; and
a second capacitor element formed over the first interlayer insulating film, the second capacitor element including a second lower electrode, a second upper electrode and a second insulating film formed between the second lower electrode and the second upper electrode,
wherein a first circuit operating in a first frequency band is arranged on the semiconductor substrate and includes the first capacitor element,
wherein a second circuit operating in a second frequency band is arranged on the semiconductor substrate and includes the second capacitor element, and
wherein the frequency included in the first frequency band is lower than the frequency included in the second frequency band.
11. A semiconductor device according to claim 10 ,
wherein the second circuit includes a first amplification stage and a second amplification stage,
wherein the first amplification stage is electrically coupled to the second amplification stage through an inter-stage matching circuit, and
wherein the inter-stage matching circuit includes the second capacitor element and an inductor.
12. A semiconductor device according to claim 11 ,
wherein the first circuit comprises a controlling circuit, and
wherein the first amplification stage and the second amplification stage comprises a transmission power amplifier.