Method of forming a semiconductor laser chip having a marker
View Patent ↗A method of manufacturing a semiconductor laser chip has following steps. First, a semiconductor substrate including an active layer and a block layer is provided. An electrode line pattern and a marker are formed on the semiconductor substrate. The semiconductor substrate is etched to form a W channel. Then, an oxide layer is formed on the semiconductor substrate to cover the electrode line pattern and the marker. A part of the oxide layer to form an electrode contact that exposes the electrode line pattern. A mounting electrode is formed on the electrode line pattern. Finally, the semiconductor substrate is divided into a plurality of semiconductor laser chip.
1. A method of manufacturing a semiconductor laser chip comprising:
providing a semiconductor substrate including an active layer and a block layer;
forming an electrode line pattern and a marker on the semiconductor substrate;
etching the semiconductor substrate to form a W channel;
forming an oxide layer on the semiconductor substrate to cover the electrode line pattern and the marker;
removing a part of the oxide layer to form an electrode contact that exposes the electrode line pattern;
forming a mounting electrode on the electrode line pattern; and
dividing the semiconductor substrate into a plurality of semiconductor laser chip.
2. A method of manufacturing a semiconductor laser chip according to claim 1 , wherein the electrode line pattern is formed at a junction side of the semiconductor substrate.
3. A method of manufacturing a semiconductor laser chip according to claim 1 , wherein the semiconductor substrate is an InP substrate.
4. A method of manufacturing a semiconductor laser chip according to claim 1 , further comprising performing a sintering so as to ensure an ohmic contact between the electrode line pattern and the semiconductor substrate.
5. A method of manufacturing a semiconductor laser chip according to claim 1 , wherein the electrode line pattern and the marker are formed of AuZu.
6. A method of manufacturing a semiconductor laser chip according to claim 1 , further comprising etching the oxide layer at a portion that is a peripheral region of the semiconductor laser chip.
7. A method of manufacturing a semiconductor laser chip according to claim 1 , further comprising coating an end surface of the semiconductor laser chip.
8. A method of manufacturing a semiconductor laser chip having a marker for detecting a position of the chip, the method comprising:
providing a semiconductor substrate including an active layer and a block layer;
forming an electrode line pattern and a marker on the semiconductor substrate;
forming an oxide layer on the semiconductor substrate so as to cover the electrode line pattern and the marker;
removing a part of the oxide layer to form an electrode contact that exposes the electrode line pattern;
forming a mounting electrode on the electrode line pattern; and
dividing the semiconductor substrate into a plurality of semiconductor laser chip.
9. A method of manufacturing a semiconductor laser chip according to claim 8 , wherein the semiconductor substrate is an InP substrate.
10. A method of manufacturing a semiconductor laser chip according to claim 8 , further comprising performing a sintering so as to ensure an ohmic contact between the electrode line pattern and the semiconductor substrate.
11. A method of manufacturing a semiconductor laser chip according to claim 8 , wherein the electrode line pattern and the marker are formed of AuZu.
12. A method of manufacturing a semiconductor laser chip according to claim 8 , wherein the semiconductor laser chip includes a plurality of markers.
13. A method of manufacturing a semiconductor laser chip according to claim 8 , wherein the marker has a substantial round shape.