Granted Patent B2

US 7,030,695 · App. 10/675,115 · Granted Apr 18, 2006

Abstract

Claims (30)

1. An apparatus comprising:

a low threshold voltage stage powered via a first power supply voltage, wherein active load components of the low threshold voltage stage have a first threshold voltage value; and

a high threshold voltage stage to receive a signal output from the low threshold voltage stage and to generate its output, wherein an active component of the high threshold voltage stage has a second threshold voltage value which is higher in magnitude than the first threshold voltage value, wherein the high threshold voltage stage is powered via a second power supply voltage, and wherein the second supply voltage is greater than the first power supply voltage, and wherein the high threshold voltage stage provides a bias for the low threshold voltage stage.

2. The apparatus of claim 1 , wherein the active load components of the low threshold voltage stage are cascoded.

3. The apparatus of claim 2 , wherein the active component of the high threshold voltage stage is cascaded to the low threshold voltage stage.

4. The apparatus of claim 3 , wherein the low threshold voltage stage is an operational transconductance amplifier.

5. The apparatus of claim 3 , wherein the active load components of the low threshold voltage stage derive lower threshold voltage value by having their gate oxide thickness less than gate oxide thickness of the active component of the high threshold voltage stage.

6. An amplifier comprising:

a low threshold voltage amplifier stage, wherein active load components of the low threshold voltage stage have a lower threshold voltage characteristic to operate at a lower supply rail voltage; and

a high threshold voltage amplifier stage to receive a signal output from the low threshold voltage amplifier stage and to generate its output, wherein an active component of the high threshold voltage amplifier stage has higher threshold voltage characteristic than the components of the low threshold voltage amplifier stage, wherein the high threshold voltage amplifier provides a bias for the low threshold voltage amplifier.

7. The amplifier of claim 6 , wherein the active load components of the low threshold voltage amplifier stage are cascoded and operate in saturation within the lower supply rail voltage.

8. The amplifier of claim 7 , wherein the active component of the high threshold voltage amplifier stage is cascaded to the cascoded low threshold voltage amplifier stage.

9. The amplifier of claim 8 , wherein the active component of the high threshold voltage amplifier stage is a single transistor to allow for only a single transistor gate-to-source voltage to set a direct current (DC) bias point at output of the low threshold voltage amplifier stage.

10. The amplifier of claim 6 , wherein the active load components of the low threshold voltage amplifier stage have their gate oxide thickness less than gate oxide thickness of the active component of the high threshold voltage amplifier stage.

11. The amplifier of claim 6 , wherein the high threshold voltage amplifier stage operates at a higher supply rail voltage than the low threshold voltage amplifier stage.

12. The amplifier of claim 6 , wherein the low threshold voltage amplifier stage is an operational transconductance amplifier.

13. An integrated circuit comprising:

a plurality of audio amplifiers, wherein each of the amplifiers:

(a) a low threshold voltage amplifier stage, wherein active load components of the low threshold voltage stage have a lower threshold voltage characteristic to operate at a lower supply rail voltage; and

(b) a high threshold voltage amplifier stage to receive a signal output from the low threshold voltage amplifier stage and to generate its output, wherein, an active component of the high threshold voltage amplifier stage has higher threshold voltage characteristic than the components of the low threshold voltage amplifier stage, wherein the high threshold voltage amplifier stage provides a bias to the low threshold voltage amplifier stage.

14. The integrated circuit of claim 13 , wherein the active load components of the low threshold voltage amplifier stage are cascoded and operate in saturation within the lower supply rail voltage.

15. The integrated circuit of claim 14 , wherein the active component of the high threshold voltage amplifier stage is cascaded to the cascoded low threshold voltage amplifier stage.

16. The integrated circuit of claim 15 , wherein the active component of the high threshold voltage amplifier stage is a single transistor to allow for only a single transistor gate-to-source voltage to set a direct current (DC) bias point at output of the low threshold voltage amplifier stage.

17. The integrated circuit of claim 15 , wherein the active load components of the low threshold voltage amplifier stage have their gate oxide thickness less than gate oxide thickness of the active load component of the high threshold voltage amplifier stage.

18. A method comprising:

utilizing a lower supply rail voltage on components of an amplifier having a low threshold voltage level characteristic to operate the components in a cascoded arrangement;

utilizing a higher supply rail voltage on a last stage of the amplifier to obtain a higher signal swing output from the amplifier, the higher supply rail voltage utilized on a last stage component having a higher threshold level characteristic than the cascoded components of the amplifier; and

providing a bias voltage from the last stage of the amplifier to the components of the amplifier.

19. The method of claim 18 , wherein utilizing the higher supply rail voltage is achieved on a last stage component that has a single transistor gate-to-source voltage to set a direct current (DC) bias point at output of low threshold voltage components of the amplifier.

20. The method of claim 18 further including amplifying an audio signal through the amplifier.

Assignments (13)