Compensation component and method for fabricating the component
A compensation component, in which a lateral section and, at least at one end of the lateral section, a section that is inclined with respect to the surface of a drift path, includes n-conducting and p-conducting regions completely embedded in a semiconductor body without a trench. In such a case, the inclined section is formed by ion implantation through an implantation mask with an inclined edge.
1. A compensation component, comprising:
a semiconductor body having:
a surface;
two active zones;
a drift path disposed between said two active zones; and
a stacked layer sequence made up of regions of first and second conduction types, said regions having:
a lateral section with at least one end; and
at least one inclined section leading toward said surface of said semiconductor body and adjoining said end of said lateral section, said lateral section and said at least one inclined section being completely embedded in said semiconductor body.
2. The compensation component according to claim 1 , wherein:
said lateral section has two ends; and
an inclined section is disposed at each of said two ends.
3. The compensation component according to claim 1 , wherein said regions of said first conduction type are connected, at an end of said lateral section opposite said end adjoining said one inclined section, to a region of said first conduction type introduced at a low level as one of said two active zones.
4. The compensation component according to claim 3 , wherein said region introduced at said low level is a drain zone.
5. The compensation component according to claim 1 , wherein said stacked layer sequence is disposed in a mirror-image fashion with respect to at least one of said two active zones.
6. The compensation component according to claim 1 , wherein at least one of said regions of said first conduction type is a proton irradiated region doped with at least one of the group consisting of a doping, phosphorus, and arsenic.
7. The compensation component according to claim 6 , wherein at least one of said regions of said second conduction type is a boron-doped region.
8. The compensation component according to claim 1 , wherein at least one of said regions of said second conduction type is a boron-doped region.
9. The compensation component according to claim 1 , further comprising an SOI structure, said semiconductor body being disposed in said SOI structure.
10. The compensation component according to claim 1 , wherein said semiconductor body is one of the group consisting of a MOSFET, a JFET, an IGBT, and a Schottky diode.
11. The compensation component according to claim 10 , further comprising a terminal, said semiconductor body having at least two gate electrodes combined by a connection and commonly connected to said terminal.
12. The compensation component according to claim 1 , wherein:
only regions of one of said first and second conduction types are introduced into a region of another of said first and second conduction types in said drift path; and
said other region is diffused to a low level.
13. The compensation component according to claim 1 , wherein at least one of said regions of said first conduction type and said regions of said second conduction type of said lateral section and of said inclined section of said drift path are ion implanted with a mask having inclined edges.
14. The compensation component according to claim 1 , wherein at least one of said regions of said first conduction type and said regions of said second conduction type of said lateral section and of said inclined section of said drift path are inclined-edged-masked ion implanted.