Absorber layer for DSA processing
A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
1. A method of processing a substrate, comprising:
depositing a layer comprising amorphous carbon on the substrate; and then
laser annealing the substrate, wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation; and further comprising removing the layer from the substrate after the laser annealing.
2. The method of claim 1 , wherein the layer comprising amorphous carbon is deposited by plasma enhanced chemical vapor deposition.
3. The method of claim 2 , wherein the layer comprising amorphous carbon is deposited from a mixture comprising C 3 H 6 .
4. A method of processing a substrate comprising:
implanting dopant ions into the substrate; and then
depositing a layer comprising amorphous carbon on the substrate; and then
laser annealing the substrate, wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation.
5. The method of claim 4 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting.
6. The method of claim 5 , wherein the substrate is laser annealed for a period of time sufficient to activate the implanted dopant ions.
7. A method of processing a substrate, comprising:
depositing a layer comprising amorphous carbon and nitrogen and a dopant selected from the group consisting of boron, phosphorus, fluorine, and combinations thereof on the substrate; and then
laser annealing the substrate with a laser, wherein the layer absorbs electromagnetic radiation emitted by the laser and transfers thermal energy created by the absorbed electromagnetic radiation to the substrate.
8. A method of processing a substrate, comprising:
depositing a layer comprising amorphous carbon and nitrogen on the substrate; and then
laser annealing the substrate with a laser, wherein the layer absorbs electromagnetic radiation emitted by the laser and transfers thermal energy created by the absorbed electromagnetic radiation to the substrate and wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation.
9. A method of processing a substrate, comprising:
implanting dopant ions into the substrate;
depositing a layer comprising amorphous carbon and nitrogen on the substrate; and then
laser annealing the substrate with a laser, wherein the layer absorbs electromagnetic radiation emitted by the laser and transfers thermal energy created by the absorbed electromagnetic radiation to the substrate.
10. The method of claim 9 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting.
11. The method of claim 10 , wherein the substrate is laser annealed for a period of time sufficient to activate the implanted dopant ions.
12. A method of processing a substrate comprising silicon, the method comprising:
depositing a layer having a thickness of between about 200 Å and about 2.5 μm under conditions sufficient to provide the layer with an emissivity of about 0.84 to about 0.99 for electromagnetic radiation having a wavelength of between about 600 nm and about 1000 nm; and then
laser annealing the substrate.
13. The method of claim 12 , wherein the layer comprises amorphous carbon.
14. The method of claim 13 , wherein the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof.
15. The method of claim 13 , wherein the layer further comprises nitrogen.
16. The method of claim 12 , wherein the layer has a thickness of between about 800 Å and about 1500 Å, and the layer is deposited under conditions sufficient to provide the layer with an emissivity of about 0.84 to about 0.99 for electromagnetic radiation having a wavelength of between about 808 nm and about 810 nm.
17. The method of claim 12 , wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation.
18. The method of claim 12 , further comprising implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon.
19. The method of claim 18 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting.
20. The method of claim 19 , wherein the substrate is laser annealed for a period of time sufficient to activate the implanted dopant ions.
21. A substrate processed by a method comprising:
depositing a layer comprising amorphous carbon and nitrogen on the substrate; and then
laser annealing the substrate, wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation.
22. The substrate of claim 21 , wherein the layer has an emissivity of about 0.84 to about 0.99 for electromagnetic radiation having a wavelength of between about 808 nm and about 810 nm.
23. A method of processing a substrate, comprising:
depositing a layer comprising amorphous carbon and a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof on the substrate; and then
laser annealing the substrate, wherein the laser annealing comprises scanning the substrate with a line of continuous wave electromagnetic radiation.