Semiconductor device and production method thereof
View Patent ↗The present invention provides a MOS semiconductor device which enables gate leakage current reduction with a thinner gate dielectric film for higher speed, and a production method thereof. According to the present invention, a gate dielectric film 6 is made as follows: after forming a silicon nitride film 3 with a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxide 4 on the silicon nitride film 3 , then this silicon oxide 4 is completely removed by exposure to a dissolving liquid. As a result, at depths between 0.12 nm and 0.5 nm from the top surface of the silicon nitride film 3 in the gate dielectric film 6 whose main constituent elements are silicon, nitrogen and oxygen, the nitrogen concentration is higher than the oxygen concentration. This enables the use of a thinner gate dielectric film with silicon, nitrogen and oxygen as main constituent elements while at the same time realizing reduction in leakage currents.
1. A production method for a semiconductor device comprising a gate electrode provided through a gate dielectric film on a semiconductor substrate of the first conductive type, and a source and a drain region of the second conductive type which are separated from each other, the method consisting of:
a step of forming a silicon oxide film on the semiconductor substrate;
a step of forming a silicon nitride film on it;
a subsequent step of annealing in an oxidizing atmosphere; and
a step of selectively removing the silicon oxide formed on the surface of the silicon nitride by the above-said step of annealing in an oxidizing atmosphere, by exposure to a liquid for dissolving the oxide silicon.
2. The semiconductor device production method as defined in claim 1 , wherein SiH 4 and NH 3 are used as source gases when the silicon nitride layer is formed by chemical vapor deposition.
3. The semiconductor device production method as defined in claim 1 , wherein, at the step of annealing in an oxidizing atmosphere after the step of forming a silicon nitride layer, annealing is done in an atmosphere containing N 2 O or an atmosphere containing water vapor and oxygen.