IP Library Granted Patent US 7,223,611
Granted Patent B2
US 7,223,611 · App. 10/683,527 · Granted May 29, 2007

Fabrication of nanowires

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Quick Facts
Patent No.
US 7,223,611
App. No.
10/683,527
Granted
May 29, 2007
Kind
B2
Abstract

This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.

Claims (46)

1. A method of fabricating nanometer-thickness wires, comprising:

providing a working surface of a superlattice having alternating layers of a first conductive material and one or more other materials, the working surface comprising exposed edges of the alternating layers, the exposed edges having a thickness and a length;

treating the working surface to cause the exposed edges of the other materials to be non-conductive; and

exposing the working surface to

ions of a second conductive material and electrochemically depositing the ions on or near the exposed edges of the first conductive material layers to create wires made of the second conductive material,

charged molecules or charged nano-objects and electro-phoretically depositing the charged molecules or charged nano-objects on or near the exposed edges of the first conductive material layers to ornate wires made of the molecules or nano-objects, and/or

a bath of water having a dissolved chemical and inducing a chemical reaction between the dissolved chemical and water to induce electrolytically depositing a reaction product of the reaction on or near the exposed edges of the first conductive material layers to create wires made of the reaction product.

2. The method of claim 1 , wherein treating the working surface comprises oxidizing the working surface to oxidize the exposed edges of the other materials to be non-conductive.

3. The method of claim 1 , further comprising etching the working surface to erode the exposed edges of the first conductive material to be a distance away from the working surface along a depth perpendicular to the length and the thickness.

4. The method of claim 1 , further comprising etching the working surface to erode the exposed edges of the first conductive material to be a distance away from the exposed edges of the other materials along a depth perpendicular to the thickness and the length, and wherein the depositing is performed until the wires fill up the distance between the exposed edges of the first conductive material and the working surface.

5. The method of claim 1 , wherein the electrochemically depositing includes creating a voltage difference between the exposed edges of the first conductive material layers and a bath containing the ions.

6. The method of claim 1 , wherein the electrochemically depositing includes:

creating a voltage difference between the exposed edges of the first conductive material layers and a bath containing the ions, and wherein the creating the voltage difference includes:

creating a connecting surface and connecting the connecting surface to a first voltage source; and

connecting a second voltage source to the bath containing the ions.

7. The method of claim 1 , wherein the charged molecules or charged nano-objects include ionized inorganic molecules, ionized organic molecules, ionized biological molecules, ionized polymers, charged metal, semiconductor or insulating nanoparticles.

8. The method of claim 1 , wherein the reaction product includes oxides and ceramics.

9. A method of fabricating nanometer-thickness wires, comprising:

providing a working surface of a superlattice having alternating layers of a first conductive material and one or more other materials, the working surface comprising exposed edges of the alternating layers, the exposed edges having a thickness and a length;

applying a thin, low-adhesion layer to the working surface that does not substantially interfere with a conductive property of the exposed edges of the first conductive material layers; and

exposing the working surface to

ions of a second conductive material and electrochemically depositing the ions on or near the exposed edges of the first conductive material layers to create wires made of the second conductive material,

charged molecules or charged nano-objects and electro-phoretically depositing the charged molecules or charged nano-objects on or near the exposed edges of the first conductive material layers to create wires made of the molecules or nano-objects, and/or

a bath of water having a dissolved chemical and inducing a chemical reaction between the dissolved chemical and water to induce electrolytically depositing a reaction product of the reaction on or near the exposed edges of the first conductive material layers to create wires made of the reaction product.

10. The method of claim 9 , further comprising:

providing a substrate having a high-adhesion layer;

contacting the wires that are on the exposed edges of the first conductive material layers onto the high-adhesion layer; and

removing the exposed edges of the first conductive material layers to release the wires from the exposed edges of the first conductive material layers.

11. The method of claim 9 , further comprising:

providing a substrate having a high-adhesion layer;

contacting the wires that are on the exposed edges of the first conductive material layers onto the high-adhesion layer; and

removing the exposed edges of the first conductive material layers to leave the wires on the high-adhesion layer of the substrate.

12. The method of claim 9 , further comprising:

providing a substrate having a second adhesion layer, the second adhesion layer having a higher coefficient of adhesion with respect to the wires than the first adhesion layer;

contacting the wires that are on the exposed edges of the first conductive material layers onto the second adhesion layer; and

removing the exposed edges of the first conductive material layers to leave the wires on the second adhesion layer.

13. The method of claim 9 , further comprising treating the working surface to cause the exposed edges of the other materials to be non-conductive.

14. The method of claim 9 , further comprising etching the working surface to erode the exposed edges of the first conductive material to be a distance away from the working surface along a depth perpendicular to the length and the thickness.

15. The method of claim 9 , further comprising etching the working surface to erode the exposed edges of the first conductive material to be a distance away from the exposed edges of the other materials along a depth perpendicular to the thickness and the length, and wherein the depositing is performed until the wires fill up the distance between the exposed edges of the first conductive material and the working surface.

16. The method of claim 9 , wherein the electrochemically depositing includes creating a voltage difference between the exposed edges of the first conductive material layers and a bath containing the ions.

17. The method of claim 9 , wherein the electrochemically depositing includes:

creating a voltage difference between the exposed edges of the first conductive material layers and a bath containing the ions, and wherein the creating the voltage difference includes:

creating a connecting surface and connecting the connecting surface to a first voltage source; and

connecting a second voltage source to the bath containing the ions.

18. The method of claim 9 , wherein the charged molecules or charged nano-objects include ionized inorganic molecules, ionized organic molecules, ionized biological molecules, ionized polymers, charged metal, semiconductor or insulating nanoparticles.

19. The method of claim 9 , wherein the reaction product includes oxides and ceramics.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2011
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.; HEWLETT-PACKARD COMPANY
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026198/0139 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2004
From: KORNILOVICH, PAVEL; MARDILOVICH, PETER; PETERS, KEVIN FRANCIS; STASIAK, JAMES
To: HEWLETT-PACKARD DEVELOPMENT COMPANY, .L.P.
Reel/Frame 014275/0217 →