Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
View Patent ↗Techniques for forming a mask fabrication layout for a physical integrated circuit design layout include correcting the fabrication layout for proximity effects using a proximity effects model. A proximity effects model is executed to produce an initial output. The initial output is based on a first position for a segment in a fabrication layout. The first position is displaced from a corresponding original edge in the original fabrication layout by a distance equal to an initial bias. The model is also executed to produce a second output based on a second position for the segment. The second position is displaced from the corresponding original edge by a distance equal to a second bias. An optimal bias for the segment is determined based on the initial output and the second output. The segment is displaced in the fabrication layout from the corresponding edge based on the optimal bias.
1. A method of correcting a fabrication layout corresponding to an original fabrication layout for proximity effects, the method comprising:
executing a routine implementing an inverse proximity effects model for a segment of an edge in an original fabrication layer, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer; and
determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in the fabrication layout.
2. A computer readable medium for correcting a fabrication layout corresponding to an original fabrication layout for proximity effects, the computer readable medium carrying instructions to cause one or more processors to perform:
executing a routine implementing an inverse proximity effects model for a segment of an edge in an original fabrication layer, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer; and
determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in the fabrication layout.
3. A carrier wave for correcting a fabrication layout corresponding to an original fabrication layout for proximity effects, the carrier wave carrying instructions to cause one or more processors to perform:
executing a routine implementing an inverse proximity effects model for a segment of an edge in an original fabrication layer, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer; and
determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in the fabrication layout.
4. A computer system for correcting a fabrication layout corresponding to an original fabrication layout for proximity effects, the computer system comprising:
a computer readable medium carrying data representing the original fabrication layout; and
one or more processors coupled to the computer readable medium, the one or more processors configured for
executing a routine implementing an inverse proximity effects model for a segment of an edge in an original fabrication layer, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer, and
determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in the fabrication layout.
5. A system for correcting a fabrication layout corresponding to an original fabrication layout for proximity effects, the system comprising:
an inverse proximity effects model for a segment of an edge in an original fabrication layer, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer, and
a means for determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in the fabrication layout.
6. A method for fabricating a printed features layer including features corrected for proximity effects, the method comprising:
executing a routine implementing an inverse proximity effects model for a segment of an edge in an original fabrication layer;
determining a correction for the segment based on a difference between an output from the inverse proximity effects model and an initial position for the segment in a fabrication layout,
determining an optimal bias for the segment in he fabrication layout based on the correction;
displacing the segment in the fabrication layout from the initial position based on the optimal bias;
producing a mask based on the fabrication layout with the segment in the fabrication layout displaced; and
producing the printed features layer in a fabrication process using the mask.
7. A mask for fabricating a printed features layer, the mask including an opaque region having a segment corrected for proximity effects, the segment corresponding to at least one portion of a target edge in an original fabrication layout for the printed features layer, wherein:
the segment is displaced from the corresponding portion by a correction distance;
the correction distance is based on a difference between an output from an inverse proximity effects model and the target edge, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer; and
the output is based on executing a routine implementing an inverse proximity effects model with input from the original fabrication layout.
8. A device having a proximity-corrected element, the device produced using a mask including an opaque region having a segment corrected for proximity effects, the segment corresponding to at least one portion of a target edge in an original fabrication layout for the printed features layer, wherein:
the segment is displaced from the corresponding portion by a correction distance;
the correction distance is based on a difference between an output from an inverse proximity effects model and the target edge, the inverse proximity effects model including a lookup table for each kernel function, the lookup table including an amplitude contribution value at a position in the lookup table related to an edge position in a printed feature layer; and
the output is based on executing a routine implementing an inverse proximity effects model with input from the original fabrication layout.