Method and apparatus for depositing material
A method of depositing organic material is provided. A carrier gas carrying an organic material is ejected from a nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material is deposited onto a substrate. In some embodiments, the dynamic pressure in a region between the nozzle and the substrate surrounding the carrier gas is at least 1 Torr, and more preferably 10 Torr, during the ejection. In some embodiments, a guard flow is provided around the carrier gas. In some embodiments, the background pressure is at least about 10e-3 Torr, more preferably about 0.1 Torr, more preferably about 1 Torr, more preferably about 10 Torr, more preferably about 100 Torr, and most preferably about 760 Torr. A device is also provided. The device includes a nozzle, which further includes a nozzle tube having a first exhaust aperture and a first gas inlet; and a jacket surrounding the nozzle tube, the jacket having a second exhaust aperture and a second gas inlet. The second exhaust aperture completely surrounds the first tube aperture. A carrier gas source and an organic source vessel may be connected to the first gas inlet. A guard flow gas source may be connected to the second gas inlet. The device may include an array of such nozzles.
1. A method of depositing a patterned layer of an organic material on a surface of a substrate, comprising:
mixing vapor of an organic material for deposition with a carrier gas;
introducing the carrier gas carrying the organic material for deposition into a nozzle;
ejecting the carrier gas carrying the organic material from the nozzle at a flow velocity that is at least 10 % of the thermal velocity of the carrier gas, such that the organic material introduced with the carrier gas into the nozzle is deposited onto a substrate, separated from the nozzle, forming the layer of the organic material on the surface of the substrate, the layer comprising a plurality of separate films; and
based upon the molecular mass of the carrier gas, the molecular mass of the organic material, the mean free path of the ejected material, or a combination thereof, selecting a separation s between the nozzle and the substrate and a downstream pressure P L sufficient to create a dynamic pressure surrounding the carrier gas in a region between the nozzle and the substrate of at least 1 Torr.
2. The method of claim 1 , wherein the dynamic pressure is at least 10 Torr.
3. The method of claim 2 , wherein a background pressure of at least 5 Torr is provided.
4. The method of claim 2 , further comprising: providing a guard flow surrounding the ejected material.
5. The method of claim 2 , wherein the dynamic pressure of at least 10 Torr is affected by a guard flow surrounding the ejected material.
6. The method of claim 5 , wherein the method is performed in a vacuum chamber at base pressure, thereby providing a background pressure of less than about 0.1 Torr.
7. The method of claim 6 , wherein the molecular weight of the organic material is greater than the molecular weight of the carrier gas.
8. The method of claim 5 , wherein the guard flow comprises a first gas, the carrier gas comprises a second gas, and the molecular weight of the first gas is greater than the molecular weight of the second gas.
9. The method of claim 1 , wherein a background pressure of about 760 Torr is provided, and the background pressure is the ambient atmosphere.
10. The method of claim 1 , wherein the dynamic pressure is at least about 760 Torr.
11. The method of claim 1 , wherein a background pressure of at least about 10 −3 Torr is provided.
12. The method of claim 1 , wherein the background pressure is at least 0.1 Torr.
13. The method of claim 12 , wherein the background pressure is at least 1 Torr.
14. The method of claim 13 , wherein the background pressure is at least 10 Torr.
15. The method of claim 14 , wherein the background pressure is at least about 760 Torr.
16. The method of claim 15 , wherein the background pressure of at least about 760 Torr is provided by a glove box without the use of a vacuum apparatus.
17. The method of claim 11 , wherein the background pressure is achieved without the use of vacuum apparatus.
18. The method of claim 1 , wherein the dynamic pressure is not greater than about 2 times the background pressure.
19. The method of claim 1 , wherein the dynamic pressure is not greater than about 10 times the background pressure.
20. The method of claim 1 , wherein the plurality of separate films comprises a plurality of pixels.
21. The method of claim 1 , wherein at least one of the nozzle diameter, the nozzle length, and nozzle-to-substrate separation is about equal to the gas mean free path length.
22. The method of claim 1 , wherein the dynamic pressure is at least 0.5 Torr greater than the background pressure.
23. A method of depositing a patterned layer of an organic material on a surface of a substrate, comprising:
mixing vapor of an organic material for deposition with a carrier gas;
introducing the carrier gas carrying the organic material for deposition into a nozzle;
ejecting the carrier gas carrying the organic material from the nozzle at a flow velocity that is at least 10% of the thermal velocity of the carrier gas, such that the organic material introduced with the carrier gas into the nozzle is deposited onto a substrate, separated from the nozzle, to form the patterned layer of organic material, the layer comprising a plurality of separate films on the surface of the substrate; and
providing a guard flow around the carrier gas.
24. The method of claim 23 , wherein the method is performed with a background pressure of at least about 760 Torr.
25. The method of claim 23 , wherein the method is performed in a glove-box without the use of a vacuum apparatus.
26. The method of claim 23 , wherein the plurality of separate films comprises a plurality of pixels.
27. The method of claim 23 , wherein at least one of the nozzle diameter, the nozzle length, and nozzle-to-substrate separation is about equal to the gas mean free path length.