Semiconductor device
View Patent ↗The semiconductor device comprises an insulating film 114 formed mainly of a film of polyallyl ether resin; an interconnection structure 116 buried in the insulating film 114 , and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film 118 formed on the insulating film 114 with the interconnection structure 116 buried in and formed mainly of a film of organosilicate glass; and an interconnection structure 120 buried in the insulating film 118 and connected to the interconnection structure 116 . Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.
1. A semiconductor device comprising:
a first insulating film formed over a semiconductor substrate;
a first interconnection structure buried in the first insulating film, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended, a length of the eave-shaped portion of the interconnection portion being 3 times or more a height of the via portion;
a second insulating film formed on the first insulating film with the first interconnection structure buried in, and formed of an insulating material whose thermal expansion coefficient is below ⅕ of a thermal expansion coefficient of an insulating material forming the first insulating film; and
a second interconnection structure buried in the second insulating film and connected to the first interconnection structure.
2. A semiconductor device comprising:
a first insulating film formed over a semiconductor substrate and formed mainly of a film of polyallyl ether resin;
a first interconnection structure buried in the first insulating film, and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended;
a second insulating film formed on the first insulating film with the first interconnection structure buried in, and formed mainly of a film of organosilicate glass; and
a second interconnection structure buried in the second insulating film, and connected to the first interconnection structure.
3. A semiconductor device according to claim 2 , wherein
a length of the eave-shaped portion of the interconnection portion of the first interconnection structure is 3 times or more a height of the via portion.
4. A semiconductor device according to claim 1 , wherein
the via portion and the interconnection portion of the first interconnection structure are formed of the same conducting layer.
5. A semiconductor device according to claim 2 , wherein
the via portion and the interconnection portion of the first interconnection structure are formed of the same conducting layer.
6. A semiconductor device according to claim 1 , wherein
the first interconnection structure and the second interconnection structure form at least a part of a guard ring.
7. A semiconductor device according to claim 2 , wherein
the first interconnection structure and the second interconnection structure form at least a part of a guard ring.
8. A semiconductor device according to claim 1 , wherein
the first interconnection structure and the second interconnection structure are formed of a conducting material mainly formed of copper.
9. A semiconductor device according to claim 2 , wherein
the first interconnection structure and the second interconnection structure are formed of a conducting material mainly formed of copper.
10. A semiconductor device according to claim 1 , wherein
the first insulating film is a layer structure of a film of polyallyl ether resin, and a film which functions to prevent the diffusion of copper and/or functions as an etching stopper for the film of polyallyl ether resin.
11. A semiconductor device according to claim 1 , wherein
the second insulating film is a layer structure of a film of organosilicate glass, and a film which functions to prevent the diffusion of copper and/or functions as an etching stopper for the film of organosilicate glass.
12. A semiconductor device comprising:
a first insulating film formed over a semiconductor substrate;
a first interconnection structure buried in at least a surface side of the first insulating film;
a second insulating film formed on the first insulating film with the first interconnection structure buried in, and formed of an insulating material whose thermal expansion coefficient is 5 or more times a thermal expansion coefficient of an insulating film forming the first insulating film; and
a second interconnection structure buried in the second insulating film, and having a via portion buried in a groove-shaped via hole and connected to the first interconnection structure and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended, a length of the eave-shaped portion of the interconnection portion of the second interconnection structure being 3 times or more a height of the via portion.
13. A semiconductor device comprising:
a first insulating film formed over a semiconductor substrate, and formed mainly of a film of organosilicate glass;
a first interconnection structure buried in at least a surface side of the first insulating film;
a second insulating film formed on the first insulating film with the first interconnection structure buried in, and formed mainly of a film of polyallyl ether resin; and
a second interconnection structure buried in the second insulating film, and having a via portion buried in a groove-shaped via hole and connected to the first interconnection structure and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended.
14. A semiconductor device according to claim 2 , wherein
the film of polyallyl ether resin is SiLK film or FLARE film.
15. A semiconductor device according to claim 13 , wherein
the film of polyallyl ether resin is SiLK film or FLARE film.
16. A semiconductor device according to claim 2 , wherein
the film of orgnaosilicate glass is SiOC film or SiO 2 film.
17. A semiconductor device according to claim 13 , wherein
the film of orgnaosilicate glass is SiOC film or SiO 2 film.
18. A semiconductor device according to claim 10 , wherein
the film which functions to prevent the diffusion of copper and/or functions as an etching stopper for the film of polyallyl ether resin is SiC film or SiN film.
19. A semiconductor device according to claim 11 , wherein
the film which functions to prevent the diffusion of copper and/or functions as an etching stopper for the film of organosilicate glass is SiC film or SiN film.