A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
1. A method for fabricating a capacitor comprising the steps of:
forming a lower electrode of a metal over a substrate;
forming a capacitor dielectric film of an oxide dielectric film on the lower electrode;
depositing a metal film on the capacitor dielectric film;
performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and
patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing.
2. A method for fabricating a capacitor according to claim 1 , wherein the step of forming the upper electrode comprises the steps of:
depositing a metal film;
subjecting the metal film to a thermal processing in a hydrogen-content atmosphere; and
patterning the metal film to form the upper electrode of the metal film.
3. A method for fabricating a semiconductor device comprising the steps of:
forming a lower electrode of a metal over a semiconductor substrate;
forming a capacitor dielectric film of an oxide dielectric film on the lower electrode;
depositing a metal film on the capacitor dielectric film;
performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and
patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing.
4. A method for fabricating a semiconductor device according to claim 3 , wherein
conditions of chemical vapor deposition for forming the lower electrode and the metal film are controlled so that an oxygen concentration in the upper electrode is higher than that the lower electrode.