IP Library Granted Patent US 7,132,473
Granted Patent B2
US 7,132,473 · App. 10/706,862 · Granted Nov 7, 2006

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

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Quick Facts
Patent No.
US 7,132,473
App. No.
10/706,862
Granted
Nov 7, 2006
Kind
B2
Abstract

Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R 1 ) 4 N] + [R 2 X] −   (1) H k [(R 1 ) 4 N] m + Y V−   (2) wherein X represents CO 2 , OSO 3 or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

Claims (6)

1. A composition for forming porous film, the composition consisting essentially of siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2):

[(R 1 ) 4 N]+[R 2 X] −   (1)

H k [(R 1 ) 4 N] m + Y n−   (2)

wherein R 1 independently represents a straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent and R 1 s may be same or different; R 2 represents a hydrogen atom or an straight chain or branched alkyl or aryl group having 1 to 10 carbons which may have a substituent; X represents CO 2 , OSO 3 , or SO 3 ; Y represents SO 4 , SO 3 , CO 3 , O 2 C—CO 2 , NO 3 , or NO 2 ; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1, and wherein the one or more quaternary ammonium salts are present in an amount of 0.001 to 10 parts by weight per one part by weight of the siloxane polymer.

2. Re composition for forming porous film according to claim 1 wherein said siloxane polymer has a weight-average molecular weight of 10,000 to 1,000,000 using polyethylene as a standard.

3. A method for tinning porous film comprising steps of applying said composition of claim 1 on a substrate to form a film and heating the film.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Oct 26, 2020
From: JEFFERIES FINANCE LLC
To: RPX CORPORATION
Reel/Frame 054486/0422 →
SECURITY INTEREST Recorded Jun 29, 2018
From: RPX CORPORATION
To: JEFFERIES FINANCE LLC
Reel/Frame 046486/0433 →
RELEASE (REEL 038041 / FRAME 0001) Recorded Jan 2, 2018
From: JPMORGAN CHASE BANK, N.A.
To: RPX CORPORATION; RPX CLEARINGHOUSE LLC
Reel/Frame 044970/0030 →
SECURITY AGREEMENT Recorded Mar 9, 2016
From: RPX CORPORATION; RPX CLEARINGHOUSE LLC
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 038041/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2014
From: PANASONIC CORPORATION (FORMERLY KNOWN AS MATSUSHITA ELECTRIC INDUSTRIAL, CO., LTD.)
To: RPX CORPORATION
Reel/Frame 032826/0585 →
CHANGE OF NAME Recorded Jan 10, 2014
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 031961/0079 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2004
From: OGIHARA, TSUTOMU; YAGIHASHI, FUJIO; HAMADA, YOSHITAKA; ASANO, TAKESHI; IWABUCHI, MOTOAKI; NAKAGAWA, HIDEO; SASAGO, MASARU
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 014784/0347 →