A wafer carrier for carrying a wafer includes a transparent base and a conducting layer. The transparent base has dimensions similar to that of the wafer, and bonds the wafer with a bonding layer. The conducting layer is transparent, and can be attracted by an electrostatic chuck so that the electrostatic chuck can deliver the wafer.
1. A wafer carrier for carrying a wafer, comprising:
a transparent base;
a conducting layer positioned on a bottom surface of the transparent base; and
a bonding layer positioned on a top surface of the wafer carrier for bonding the wafer and the transparent base together;
wherein the conducting layer of the wafer carrier is attracted to an electrostatic chuck via electrostatic force.
2. The wafer carrier of claim 1 , wherein the transparent base has dimensions similar to that of the wafer.
3. The wafer carrier of claim 1 , wherein the transparent base is a glass wafer.
4. The wafer carrier of claim 1 , wherein the transparent base is a quartz wafer.
5. The wafer carrier of claim 1 , wherein the bonding layer is selected from the group consisting of double-sided tape, ultra violet tape, thermal sensitive tape, photo resist, and wax.
6. The wafer carrier of claim 1 , wherein the wafer is transferred and undergoes at least a semiconductor process.
7. The wafer carrier of claim 6 , wherein the semiconductor process is a double-sided process, and the wafer comprises at least an alignment mark.
8. The wafer carrier of claim 7 , wherein the conducting layer is a transparent conducting layer.
9. The wafer carrier of claim 7 , wherein the conducting layer is a non-transparent conducting layer having at least an exposed region corresponding to the alignment mark.
10. The wafer carrier of claim 9 , wherein the non-transparent conducting layer comprises a plurality of conducting patterns connected with each other.
11. A wafer carrier adapted for use in a double-sided process for carrying a wafer, comprising:
a transparent base;
a conducting layer positioned on a bottom surface of the transparent base, wherein the conducting layer of the wafer carrier is attracted to an electrostatic chuck via electrostatic force; and
a bonding layer positioned on a top surface of the transparent base for bonding the wafer and the transparent base.
12. The wafer carrier of claim 11 , wherein the transparent base has dimensions similar to that of the wafer.
13. The wafer carrier of claim 11 , wherein the transparent base is a glass wafer.
14. The wafer carrier of claim 11 , wherein the transparent base is a quartz wafer.
15. The wafer carrier of claim 11 , wherein the bonding layer is selected from the group consisting of double-sided tape, ultra violet tape, thermal sensitive tape, photo resist, and wax.
16. The wafer carrier of claim 11 , wherein the wafer is transferred and undergoes the double-sided process.
17. The wafer carrier of claim 16 , wherein the wafer comprises at least an alignment mark.
18. The wafer carrier of claim 17 , wherein the conducting layer is a transparent conducting layer.
19. The wafer carrier of claim 17 , wherein the conducting layer is a non-transparent conducting layer having at least an exposed region corresponding to the alignment mark.
20. The wafer carrier of claim 19 , wherein the non-transparent conducting layer comprises a plurality of conducting patterns connected with each other.