Pattern formation method
View Patent ↗After forming a resist film of a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a solution including a basic compound. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
1. A pattern formation method comprising the steps of:
forming a resist film of a chemically amplified resist material;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying, onto said resist film, an immersion solution including a basic compound; and
forming a resist pattern by developing said resist film after the pattern exposure.
2. The pattern formation method of claim 1 ,
wherein said immersion solution comprises water or perfluoropolyether.
3. The pattern formation method of claim 1 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, or F 2 laser.
4. The pattern formation method of claim 1 ,
wherein said basic compound is a primary aliphatic amine, a secondary aliphatic amine, a tertiary aliphatic amine, an aromatic amine, an amide derivative, an imide derivative, or a compound having a hydroxyl group and including nitrogen.
5. The pattern formation method of claim 1 ,
wherein said basic compound is a primary aliphatic amine such as ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine or isobutylamine.
6. The pattern formation method of claim 1 ,
wherein said basic compound is a secondary aliphatic amine such as dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-secbutylamine, dipentylamine, dicyclopentylamine, dihexylamine or dicyclohexylamine.
7. The pattern formation method of claim 1 ,
wherein said basic compound is a tertiary aliphatic amine such as trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, dimethylethylamine, methylethylpropylamine, benzylamine, phenetylamine or benzyldimethylamine.
8. The pattern formation method of claim 1 ,
wherein said basic compound is an aromatic amine such as diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, an aniline derivative, a pyrrole derivative, an oxazole derivative, a thiazole derivative, an imidazole derivative, a pyrroline derivative, a pyrrolidine derivative, a pyridine derivative or a quinoline derivative.
9. The pattern formation method of claim 1 ,
wherein said basic compound is an aniline derivative such as aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline or trimethylaniline.
10. The pattern formation method of claim 1 ,
wherein said basic compound is a pyrrole derivative such as pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole or N-methylpyrrole.
11. The pattern formation method of claim 1 ,
wherein said basic compound is an oxazole derivative such as oxazole or isoxazole.
12. The pattern formation method of claim 1 ,
wherein said basic compound is a thiazole derivative such as thiazole or isothiazole.
13. The pattern formation method of claim 1 ,
wherein said basic compound is an imidazole derivative such as imidazole or 4-methylimidazole.
14. The pattern formation method of claim 1 ,
wherein said basic compound is a pyrroline derivative such as pyrroline or 2-methyl-1-pyrroline.
15. The pattern formation method of claim 1 ,
wherein said basic compound is a pyrrolidine derivative such as pyrrolidine, N-methylprrolidine or N-methylpyrrolidone.
16. The pattern formation method of claim 1 ,
wherein said basic compound is a pyridine derivative such as pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, aminopyridine or dimethylaminopyridine.
17. The pattern formation method of claim 1 ,
wherein said basic compound is a quinoline derivative such as quinoline or 3-quionlinecarbonitrile.
18. The pattern formation method of claim 1 ,
wherein said basic compound is an amide derivative such as formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide or benzamide.
19. The pattern formation method of claim 1 ,
wherein said basic compound is an imide derivative such as phthalimide, succinimide or maleimide.
20. The pattern formation method of claim 1 ,
wherein said basic compound is a compound having a hydroxyl group and including nitrogen such as 2-hydroxypyridine, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2′-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 2-(2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine; piperidineethanol, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)-2-pyrrolidinone, 3-piperizino-1,2-propanediol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol or N-(2-hydroxyethyl)phthalimide.
21. A pattern formation method comprising the steps of:
forming a resist film of a chemically amplified resist material;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying, onto said resist film, an immersion solution including a basic polymer; and
forming a resist pattern by developing said resist film after the pattern exposure.
22. The pattern formation method of claim 21 ,
wherein said immersion solution comprises water or perfluoropolyether.
23. The pattern formation method of claim 21 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, or F 2 laser.
24. The pattern formation method of claim 21 ,
wherein said basic polymer is poly-N,N-dimethylaminomethylstyrene, polyaniline, polyethylenimine, polyvinylamine, polyallylamine, polyornithine or polylysine.
25. The pattern formation method comprising the steps of:
forming a resist film of a chemically amplified resist material;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying, onto said resist film, an immersion solution including a compound for generating a base through irradiation with light; and
forming a resist pattern by developing said resist film after the pattern exposure.
26. The pattern formation method of claim 25 ,
wherein said immersion solution comprises water or perfluoropolyether.
27. The pattern formation method of claim 25 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, or F 2 laser.
28. The pattern formation method of claim 25 ,
wherein said compound for generating a base through irradiation with light is an O-acyl oxime.
29. The pattern formation method of claim 25 ,
wherein said compound for generating a base through irradiation with light is an O-acyl oxime such as O-acryloylacetophenone oxime or O-acryloylacetonaphthone oxime.
30. A pattern formation method comprising the steps of:
forming a resist film of a chemically amplified resist material;
performing pattern exposure by selectively irradiating said resist film with exposing light while supplying, onto said resist film, an immersion solution including a compound for generating a base through application of heat; and
forming a resist pattern by developing said resist film after the pattern exposure.
31. The pattern formation method of claim 30 ,
wherein said compound for generating a base through application of heat is an acylsulfonyl.
32. The pattern formation method of claim 30 ,
wherein said compound for generating a base through application of heat is p-phenacylsulfonylstyrene.
33. The pattern formation method of claim 30 ,
wherein said immersion solution comprises water or perfluoropolyether.
34. The pattern formation method of claim 30 ,
wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, or F 2 laser.