Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount
Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
1. A submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes, the submount comprising:
a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes;
first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and
first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.
2. The submount according to claim 1 , wherein the substrate is made of one of AlN, SiC, GaN, and an insulating material having a heat transfer coefficient corresponding to that of one of AlN, SiC, and GaN.
3. The submount according to claim 1 , wherein the first and second metal layers are made of an alloy of two or more selected from the group consisting of Cr, Ti, Pt, and Au.
4. The submount according to claim 1 , wherein the first and second solder layers are made of an alloy of two or more selected from the group consisting of Cr, Ti, Pt, Au, Mo, and Sn.
5. A semiconductor laser diode assembly comprising a semiconductor laser diode chip with stepped first and second electrodes and a submount flip-chip bonded to the semiconductor laser diode chip, the submount comprising:
a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes;
first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and
first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.