IP Library Granted Patent US 6,894,540
Granted Patent B1
US 6,894,540 · App. 10/738,433 · Granted May 17, 2005

Glitch removal circuit

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Quick Facts
Patent No.
US 6,894,540
App. No.
10/738,433
Granted
May 17, 2005
Kind
B1
Abstract

A glitch removal circuit that removes both positive and negative glitches from an input signal includes a delay circuit, a glitch blocking circuit, and a latch circuit. The delay circuit receives the input signal and introduces a delay into it. The glitch blocking circuit is coupled to the delay circuit, and includes two NMOS transistors and two PMOS transistors. The glitch blocking circuit receives the input signal and the delayed input signal and blocks the input signal if there is a glitch in it. The latch circuit is coupled to the output of the glitch blocking circuit. The latch circuit inverts the output of the glitch blocking circuit and stores the output on a continuous basis. The latch circuit provides glitch free signal as the output.

Claims (71)

1. A glitch removal circuit, comprising:

a delay circuit that receives an input signal and generates first and second delayed input signals, wherein the delay circuit includes first and second inverters connected in series, the first inverter receiving the input signal and the second inverter generating the first delayed input signal and a third inverter having an input connected to the output of the second inverter, the third inverter generating the second delayed input signal;

a glitch blocking circuit, coupled to the delay circuit, for removing both positive and negative glitches from the input signal, the glitch blocking circuit comprising:

a first PMOS transistor receiving the input signal;

a first NMOS transistor receiving the input signal;

a second PMOS transistor receiving the first delayed input signal; and

a second NMOS transistor receiving the first delayed input signal; and

a latch circuit, having an input coupled to an output of the glitch blocking circuit, for providing a generally glitch free signal.

2. The glitch removal circuit according to claim 1 , wherein the delay circuit comprises at least one transmission gate.

3. The glitch removal circuit according to claim 1 , wherein the glitch blocking circuit comprises:

the first PMOS transistor having a gate receiving the input signal;

the first NMOS transistor having a gate receiving the input signal, a drain connected to a drain of the first PMOS transistor, and wherein the output of the glitch blocking circuit is derived from the drain of the first NMOS transistor;

the second PMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first PMOS transistor, and a source receiving the second delayed input signal; and

the second NMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first NMOS transistor, and a source receiving the second delayed input signal.

4. The glitch removal circuit according to claim 3 , wherein the latch circuit comprises:

a fourth inverter having an input connected to the output of the glitch blocking circuit; and

a fifth inverter having an input connected to an output of the fourth inverter, and an output connected to the input of the fourth inverter, wherein the generally glitch free signal is derived from the output of the fourth inverter.

5. The glitch removal circuit according to claim 1 , wherein the glitch blocking circuit further comprises:

a third PMOS transistor having a gate connected to the source of the first NMOS transistor, a source connected to ground, and a drain connected to the source of the first PMOS transistor; and

a third NMOS transistor having a gate connected to the source of the first PMOS transistor, a source connected to a reset voltage, and a drain connected to the source of the first NMOS transistor.

6. The glitch removal circuit according to claim 5 , wherein the latch circuit comprises an inverter having an input connected to the output of the glitch blocking circuit.

7. A glitch removal circuit for removing positive and negative glitches from an input signal, comprising:

a delay circuit having first and second inverters connected in series, the first inverter receiving the input signal and the second inverter generating a first delayed input signal, and a third inverter having an input connected to the output of the second inverter, the third inverter generating a second delayed input signal;

a glitch blocking circuit, coupled to the delay circuit, for removing both positive and negative glitches from the input signal, the glitch blocking circuit comprising:

a first PMOS transistor having a gate receiving the input signal;

a first NMOS transistor having a gate receiving the input signal, a drain connected to a drain of the first PMOS transistor, and wherein an output of the glitch blocking circuit is derived from the drain of the first NMOS transistor;

a second PMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first PMOS transistor, and a source receiving the second delayed input signal; and

a second NMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first NMOS transistor, and a source receiving the second delayed input signal; and

a latch circuit including a fourth inverter having an input connected to the output of the glitch blocking circuit and a fifth inverter having an input connected to an output of the fourth inverter and an output connected to the input of the fourth inverter, wherein a generally glitch free signal is derived from the output of the fourth inverter.

8. A glitch removal circuit, comprising:

a delay circuit that receives an input signal and generates first and second delayed input signals;

a glitch blocking circuit, coupled to the delay circuit, for removing both positive and negative glitches from the input signal, the glitch blocking circuit comprising:

first and second NMOS transistors coupled to the delay circuit for receiving the first delayed input signal; and

first and second PMOS transistors coupled to the delay circuit; and

a latch circuit, having an input coupled to an output of the glitch blocking circuit, for providing a generally glitch free signal.

9. The glitch removal circuit according to claim 8 , wherein the delay circuit comprises:

a first inverter having an input receiving the input signal and an output providing the first delayed input signal;

second and third inverters connected in series, the second inverter receiving the input signal and the third inverter providing the second delayed output signal.

10. The glitch removal circuit according to claim 9 , wherein the glitch blocking circuit comprises:

the first PMOS transistor having a gate receiving the first delayed input signal;

the first NMOS transistor having a gate receiving the first delayed input signal and a drain connected to a drain of the first PMOS transistor;

the second PMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first PMOS transistor, and a drain connected to the delay circuit and receiving the second delayed input signal; and

the second NMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first NMOS transistor, and a drain connected to the delay circuit and receiving the second delayed input signal, wherein an output of the glitch blocking circuit is derived from the drain of the first NMOS transistor.

11. The glitch removal circuit according to claim 10 , wherein the latch circuit comprises:

a fourth inverter having an input connected to the output of the glitch blocking circuit; and

a fifth inverter having an input connected to an output of the fourth inverter, and an output connected to the input of the fourth inverter, wherein the generally glitch free signal is derived from the output of the fourth inverter.

12. The glitch removal circuit of claim 10 , wherein the glitch blocking circuit further comprises:

a third PMOS transistor having a gate connected to the source of the first NMOS transistor, a source connected to ground, and a drain connected to the source of the first PMOS transistor; and

a third NMOS transistor having a gate connected to the source of the first PMOS transistor, a source connected to a reset voltage, and a drain connected to the source of the first NMOS transistor.

13. The glitch removal circuit according to claim 12 , wherein the latch circuit comprises an inverter having an input connected to the output of the glitch blocking circuit.

14. The glitch removal circuit according to claim 8 , wherein the delay circuit comprises:

first and second inverters connected in series, the first inverter receiving the input signal and generating the first delayed output signal and the second inverter providing the second delayed output signal.

15. The glitch removal circuit according to claim 14 , wherein the glitch blocking circuit comprises:

the first PMOS transistor having a gate receiving the first delayed input signal;

the first NMOS transistor having a gate receiving the first delayed input signal and a drain connected to a drain of the first PMOS transistor;

the second PMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first PMOS transistor, and a drain connected to the delay circuit and receiving the second delayed input signal; and

the second NMOS transistor having a gate receiving the first delayed input signal, a drain connected to a source of the first NMOS transistor, and a drain connected to the delay circuit and receiving the second delayed input signal, wherein an output of the glitch blocking circuit is derived from the drain of the first NMOS transistor.

16. The glitch removal circuit according to claim 15 , wherein the latch circuit comprises:

a third inverter having an input connected to the output of the glitch blocking circuit; and

a fourth inverter having an input connected to an output of the third inverter, and an output connected to the input of the third inverter, wherein the generally glitch free signal is derived from the output of the third inverter.

17. The glitch removal circuit according to claim 8 , wherein the delay circuit comprises:

a first inverter having an input receiving the input signal and an output providing the first delayed input signal;

second and third inverters connected in series, the second inverter receiving the input signal and providing the second delayed input signal and the third inverter providing a third delayed output signal.

18. The glitch removal circuit according to claim 17 , wherein the glitch blocking circuit comprises:

the first PMOS transistor having a gate receiving the first delayed input signal;

the first NMOS transistor having a gate receiving the first delayed input signal and a drain connected to a drain of the first PMOS transistor;

the second PMOS transistor having a gate receiving the second delayed input signal, a drain connected to a source of the first PMOS transistor, and a drain connected to the delay circuit and receiving the third delayed input signal; and

the second NMOS transistor having a gate receiving the second delayed input signal, a drain connected to a source of the first NMOS transistor, and a drain connected to the delay circuit and receiving the third delayed input signal, wherein an output of the glitch blocking circuit is derived from the drain of the first NMOS transistor.

19. The glitch removal circuit according to claim 18 , wherein the latch circuit comprises:

a fourth inverter having an input connected to the output of the glitch blocking circuit; and

a fifth inverter having an input connected to an output of the fourth inverter, and an output connected to the input of the fourth inverter, wherein the generally glitch free signal is derived from the output of the fourth inverter.

Assignments (17)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
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To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
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