Discrete component comprising HF diodes in series with a common cathode
An electric component comprising an assembly of two PIN diodes in series formed in a semiconductor substrate layer separated from a support layer by an insulating layer, the doped areas forming the electrodes of each diode having a depth equal to that of the substrate layer, the component including a first area of a first doping type surrounded with a second intrinsic area, itself surrounded with a third area of a second doping type, the third area being surrounded with a fourth area of the first doping type, the fourth area being surrounded with a fifth intrinsic area, itself surrounded with a sixth area of the second doping type, the third and fourth areas being covered and connected by a metal area, each of the first and sixth areas being connected to a contact pad on which rests a welding ball.
1. An electric component comprising an assembly of two PIN diodes in series formed in a semiconductor substrate layer separated from a support layer by an insulating layer, the doped areas forming the electrodes of each diode having a depth equal to that of the substrate layer, the component comprising a first area of a first doping type surrounded with a second intrinsic area, itself surrounded with a third area of a second doping type, the third area being surrounded with a fourth area of the first doping type, the fourth area being surrounded with a fifth intrinsic area, itself surrounded with a sixth area of the second doping type, the third and fourth areas being covered and connected by a metal area, each of the first and sixth areas being connected to a contact pad on which rests a welding ball.
2. The component of claim 1 , wherein the first area has a cylindrical shape and the second, third, fourth, and fifth areas are ring-shaped.
3. An electric circuit comprising several diodes formed in a substrate layer separated from a support layer by an insulating layer, the diodes being distributed on one or several branches, first branches comprising two diodes in series formed according to claim 1 , second branches comprising a single diode formed of a first area of the first doping type surrounded with a second intrinsic area, itself surrounded with a third area of the second doping type, the sixth areas of the diodes of the first branches and the third areas of the diodes of the second branches forming a single common area.
4. The circuit of claim 3 , wherein the single common area is connected to at least one contact pad, each of the first areas of the diodes of the first and second branches being connected to a contact pad.
5. The circuit of claim 4 , wherein the first areas have a cylindrical shape and the second, third, fourth, and fifth areas of the diodes of the first branches and the second area of the diodes of the second branches are ring-shaped.
6. The circuit of claim 3 , wherein the single common area is covered with a metal area extending above portions of the single common area separating the other doped or intrinsic areas of the different diodes.
7. The component of claim 1 , wherein the first doping type is a P doping and the second doping type is an N doping, said first area being an anode area and said third area being a cathode area.