Semiconductor device and method for manufacturing same
View Patent ↗A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.
1. A semiconductor device of an MIS (metal insulator semiconductor)-type comprising:
a substrate;
an insulating film made of metal oxide being deposited on said substrate; and
an electrode formed on said insulating film;
wherein said insulating film comprises a first insulating region formed in a vicinity of said substrate and comprising hafnium and aluminum, and a second insulating region formed in a vicinity of said electrode and comprising aluminum; and
wherein a concentration of aluminum in said first insulating region is substantially constant throughout.
2. The semiconductor device according to claim 1 , wherein said metal oxide is made of amorphous metal oxide and said electrode is made of a polycrystalline semiconductor.
3. The semiconductor device according to claim 1 , wherein said insulating film further comprises a boundary region between said first insulating region and said second insulating region wherein a hafnium concentration decreases and an aluminum concentration increases in said boundry region along a direction of a thickness of said boundry region from a side of said substrate toward a side of said electrode.
4. The semiconductor device according to claim 3 , wherein an aluminum concentration and a hafnium concentration are set so that a ratio of hafnium atoms to a sum of a number of aluminum atoms and hafnium atoms in said first insulating region is 0.5 or more and 0.8 or less.
5. The semiconductor device according to claims 3 , wherein a ratio of a thickness of said second insulating region to a thickness of said first insulating region is set to be ⅓ or more and 1.0 or less.
6. The semiconductor device according to claim 1 , wherein said insulating film further comprises a third insulating region which comprises hafnium and aluminum and is formed between said first insulating region and said second insulating region; and
wherein the concentration of said hafnium in said third insulating region changes in stages along a direction of a thickness of said third insulating region.
7. The semiconductor device according to claim 6 , wherein an aluminum concentration and a hafnium concentration are set so that a ratio of hafnium atoms to a sum of a number of aluminum atoms and hafnium atoms in said first insulating region is 0.5 or more and 0.8 or less.
8. The semiconductor device according to claims 6 , wherein a ratio of a thickness of said second insulating region to a thickness of said first insulating region is set to be ⅓ or more and 1.0 or less.
9. The semiconductor device according to claim 1 , wherein a thickness of said insulating film is 2 nanometers or more and 5 nanometers or less.
10. The semiconductor device according to claim 1 , wherein a seed layer made of silicon oxide is sandwiched between said substrate and said insulating film.
11. The semiconductor device according to claim 4 , wherein said second insulating region further comprises aluminum;
and wherein an aluminum concentration and a hafnium concentration in said second insulating region are set so that a ratio of aluminum atoms to a sum of a number of aluminum atoms and hafnium atoms is 0.5 or more.
12. The semiconductor device according to claim 7 , wherein said second insulating region further comprises aluminum;
and wherein an aluminum concentration and a hafnium concentration in said second insulating region are set so that a ratio of aluminum atoms to a sum of a number of aluminum atoms and hafnium atoms is 0.5 or more.
13. The semiconductor device according to claim 1 , wherein an aluminum concentration and a hafnium concentration are set so that a ratio of hafnium atoms to a sum of a number of aluminum atoms and hafnium atoms in said first insulating region is 0.5 or more and 0.8 or less.
14. The semiconductor device according to claim 1 , wherein said second insulating region further comprises aluminum;
and wherein an aluminum concentration and a hafnium concentration in said second insulating region are set so that a ratio of aluminum atoms to a sum of a number of aluminum atoms and hafnium atoms is 0.5 or more.
15. The semiconductor device according to claim 1 , wherein said second insulating region further comprises aluminum and a concentration of aluminum in said second insulating region is substantially constant throughout.
16. The semiconductor device according to claim 14 , wherein a concentration of hafnium in said first insulating region is substantially constant throughout an a concentration of hafnium in said second insulating region is substantially constant throughout.