Methods for fabricating semiconductor devices

1. A method for fabricating a semiconductor device comprising:

forming a first gate electrode including a dielectric layer, a first conducting layer formed on the dielectric layer, and a first insulating layer formed on the conducting layer on a substrate, the first gate electrode functioning as a flash memory;

forming first spacers on sidewalls of the first gate electrode;

forming a second gate electrode comprising a gate oxide layer and a second conducting layer on the substrate, the second gate electrode functioning as a normal gate electrode;

performing a first ion implantation process using at least one of the first spacers as a mask to form a shallow junction region for a source/drain region;

forming second spacers on a sidewall of the first spacer and on sidewalls of the second gate electrode; and

performing a second ion implantation process using at least one of the second spacers as a mask to form a deep junction region for the source/drain region.

2. A method as defined in claim 1 , wherein forming the first spacers comprises:

forming a second insulating layer on the substrate and the first gate electrode; and

performing an etch back process on the second insulating layer.

3. A method as defined in claim 1 , wherein forming the second spacers comprises:

forming a third insulating layer on the substrate, the first gate electrode, the first spacers, and the second gate electrode; and

performing an etch back process on the third insulating layer.