Method of forming a trench in a semiconductor device
View Patent ↗A method for forming a trench in a semiconductor device is disclosed. An example method forms a pad oxide film and a silicon nitride film on a semiconductor substrate, selectively etches the silicon nitride film and the pad oxide film on a region to be formed with a trench, and implants oxygen ions into the semiconductor substrate in the region to be formed with the trench. The example method also forms an oxide in the semiconductor substrate by reacting the oxygen ions with the semiconductor substrate through a thermal diffusion of the oxygen ions, forms the trench by etching the semiconductor substrate and the oxide on the region to be formed with the trench using the silicon nitride film as a mask, forms a liner oxide film on an inner wall of the trench using a thermal diffusion process, and forms an insulation film on the liner oxide film such that the trench is filled.
1. A method for forming a trench in a semiconductor device comprising:
forming a pad oxide film and a silicon nitride film on a silicon wafer;
forming a first photosensitive film pattern on the region to be formed with the trench by applying, exposing, and developing a photosensitive film on the silicon nitride film;
selectively etching the silicon nitride film and the pad oxide film on a region to be formed with a trench using the first photosensitive film pattern as a mask;
forming a second photosensitive film pattern having an opening portion of a width narrower than that of an opening portion of the first photosensitive film pattern on the silicon nitride film and the exposed silicon wafer, the opening portion of the second photosensitive film pattern having a center axis as the opening portion of the first photosensitive film pattern;
implanting oxygen ions into the silicon wafer in the region to be formed with the trench at a desired depth of the trench using the second photosensitive film pattern as a mask;
forming an oxide in the silicon wafer by reacting the oxygen ions with the silicon wafer through a thermal diffusion of the oxygen ions;
forming the trench by etching the silicon wafer and the oxide on the region to be formed with the trench using the silicon nitride film as a mask;
forming a liner oxide film on an inner wall of the trench using a thermal diffusion process; and
forming an insulation film on the liner oxide film such that the trench is filled, wherein an edge at which a side end a bottom of the trench intersect has a curved surface.
2. The method of claim 1 , wherein, during thermal diffusion of the oxygen ions the oxygen ions are thermally diffused in a nitrogen atmosphere.
3. A method for forming a trench in a semiconductor device comprising:
forming a pad oxide film and a silicon nitride film on a silicon wafer:
forming a first a photosensitive film pattern on the region to be formed with the trench by applying, exposing, and developing a photosensitive film on the silicon nitride film;
selectively etching the silicon nitride film and the pad oxide film on a region to be formed with a trench using the first photosensitive film pattern as a mask;
forming a second photosensitive film pattern having an opening portion of a width narrower than that of an opening portion of the first photosensitive film pattern on the silicon nitride film and the exposed silicon wafer, the opening portion of the second photosensitive film pattern having a center axis as the opening portion of the first photosensitive film pattern;
implanting oxygen ions into the silicon wafer in the region to be formed with the trench at a desired depth of the trench using, the second photosensitive film pattern as a mask;
forming an oxide in the silicon wafer by reacting the oxygen ions with the silicon wafer through a thermal diffusion of the oxygen ions;
forming the trench by etching the silicon wafer and the oxide on the region to be formed with the trench using the silicon nitride film as a mask;
forming a liner oxide film on an inner wail of the trench using a thermal diffusion process; and
forming an insulation film on the liner oxide film such that the trench is filled, wherein an oxide film is formed on an entire top surface including the silicon nitride film and the trench such that the trench is filled, and then the oxide film is chemically and mechanically polished until the silicon nitride film is exposed.
wherein an edge at which a side and a bottom of the trench intersect has a curved surface.
4. The method of claim 1 , wherein said step of forming the trench comprises etching the silicon wafer and the oxide on the region to be formed with the trench at different rates.