Methods of forming quantum dots in semiconductor devices
View Patent ↗Methods of forming quantum dots in semiconductor devices are disclosed. One example method includes adsorbing metal clusters on a silicon substrate by controlling density thereof, growing silicon by heating the substrate on which the metal clusters are adsorbed, and removing the metal clusters. The example method further includes forming a silicon oxide layer on the substrate and depositing polysilicon on the oxide layer and patterning the polysilicon and the oxide layer.
1. A method of forming quantum dots in a semiconductor device, the method comprising:
adsorbing metal clusters on a silicon substrate by controlling density thereof;
growing silicon by heating the substrate on which the metal clusters are adsorbed;
removing the metal clusters;
forming a silicon oxide layer on the substrate by performing thermal oxidation, wherein the thermal oxidation uses O 2 gas or NO gas at a temperature of about 800 to 1000° C.; and
depositing polysilicon on the oxide layer and patterning the polysilicon and the oxide layer.
2. A method as defined by claim 1 , wherein a metal of the metal clusters is selected from the group consisting of gold, silver, and a transition metal.
3. A method as defined by claim 1 , wherein the silicon is grown by chemical vapor deposition (CVD) method using the metal clusters as a mask.
4. A method as defined by claim 1 , wherein the silicon condenses and grows only between the metal clusters and the silicon substrate and nano-line of the silicon is formed vertically on the surface.
5. A method as defined by claim 1 , wherein the size of the metal clusters is between about 5 and 50 nanometers.
6. A method as defined by claim 1 , wherein the size of the metal clusters is between about 6 and 50 nanometers.
7. A method of forming quantum dots in a semiconductor device, the method comprising:
adsorbing metal clusters on a silicon substrate by controlling density thereof;
growing silicon by chemical vapor deposition (CVD) using the metal clusters as a mask and hearing the substrate on which the metal clusters are adsorbed;
removing the metal clusters;
forming a silicon oxide layer on the substrate; and
depositing polysilicon on the oxide layer and patterning the polysilicon and the oxide layer.
8. A method as defined by claim 7 , wherein a metal of the metal clusters is selected from the group consisting of gold, silver, and a transition metal.
9. A method as defined by claim 7 , wherein the silicon condenses and grows only between the metal clusters and the silicon substrate and nano-line of the silicon is formed vertically on the surface.
10. A method as defined by claim 7 , wherein the size of the metal clusters is between about 5 and 50 nanometers.
11. A method as defined by claim 7 , wherein the silicon oxide layer is formed by thermal oxidation method.
12. A method as defined by claim 11 , wherein the thermal oxidation method uses O 2 gas or NO gas at a temperature of about 800 to 1000° C.
13. A method as defined by claim 7 , wherein the size of the metal clusters is between about 6 and 50 nanometers.