Co-doping for fermi level control in semi-insulating Group III nitrides
View Patent ↗Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep level transition metal dopant. Such layers and/or method may also include doping a Group III nitride layer with a shallow level dopant having a concentration of less than about 1×10 17 cm −3 and doping the Group III nitride layer with a deep level transition metal dopant. The concentration of the deep level transition metal dopant is greater than a concentration of the shallow level p-type dopant.
1. A semi-insulating semiconductor material layer, comprising a Group III nitride layer including a shallow level p-type dopant and a deep level dopant, wherein a concentration of the deep level dopant is greater than a concentration of the shallow level p-type dopant, and wherein the deep level dopant comprises a deep level transition metal dopant; and
wherein the concentration of the deep level transition metal dopant is at least about three times greater than the concentration of the shallow level p-type dopant.
2. The semiconductor material layer of claim 1 , wherein the concentration of the shallow level p-type dopant is greater than a background concentration caused by defects and unintentional impurities in the Group III nitride layer.
3. The semiconductor material layer of claim 1 , wherein the concentration of the shallow level p-type dopant is less than about 1×10 17 cm −3 .
4. The semiconductor material layer of claim 1 , wherein the shallow level p-type dopant comprises Mg and/or Zn.
5. The semiconductor material layer of claim 1 , wherein the concentration of the shallow level dopant is a net concentration.
6. The semiconductor material layer of claim 1 , wherein the deep level transition metal dopant comprises Fe, Co, Mn, Cr, V and/or Ni.
7. The semiconductor material layer of claim 1 , wherein the deep level transition metal dopant comprises Fe.
8. The semiconductor material layer of claim 1 , wherein a donor-like energy level of the deep level transition metal dopant is a dominant energy level of the deep level transition metal dopant.
9. The semiconductor material layer of claim 1 , wherein the concentration of the deep level transition metal dopant is greater than about 2×10 17 cm −3 .
10. The semiconductor material layer of claim 1 , wherein the concentration of the deep level transition metal dopant is about 2×10 16 cm −3 .
11. A semi-insulating semiconductor material layer, comprising a Group III nitride layer including a shallow level dopant having a concentration of less than about 1×10 17 cm −3 and a deep level dopant, wherein a concentration of the deep level dopant is greater than the concentration of the shallow level dopant, and wherein the deep level dopant comprises a deep level transition metal dopant, wherein the concentration of the shallow level dopant is greater than a background concentration caused by defects and unintentional impurities in the Group III nitride layer; and
wherein the concentration of the deep level transition metal dopant is at least about three times greater than the concentration of the shallow level dopant.
12. The semiconductor material layer of claim 11 , wherein the shallow level dopant comprises an n-type dopant.
13. The semiconductor material layer of claim 11 , wherein the concentration of the shallow level dopant is a net concentration.
14. The semiconductor material layer of claim 11 , wherein the deep level transition metal dopant comprises Fe, Co, Mn, Cr, V and/or Ni.
15. The semiconductor material layer of claim 11 , wherein the deep level transition metal dopant comprises Fe.
16. The semiconductor material layer of claim 11 , wherein the shallow level dopant comprises an n-type dopant and an acceptor-like energy level of the deep level transition metal dopant is a dominant energy level of the deep level transition metal dopant.
17. The semiconductor material layer of claim 11 , wherein the concentration of the deep level transition metal dopant is greater than about 2×10 17 cm −3 .
18. The semiconductor material layer of claim 11 , wherein the concentration of the deep level transition metal dopant is about 2×10 16 cm −3 .