Magnetic memory device
View Patent ↗A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
1. A magnetic random access memory (MRAM) device, comprising:
a magnetic memory cell switchable between two states under the influence of a magnetic field;
an electrical bit line coupled to the magnetic memory cell for generating the magnetic field, the electrical bit line comprising a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell;
a thermal insulator positioned between the conductive component and the magnetic memory cell, and the magnetic component having at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
2. The MRAM of claim 1 , wherein:
the at least one guiding portion extends along a portion of the thermal insulator.
3. The MRAM of claim 1 , wherein:
the magnetic component and the conductive component are integrally formed from one magnetic and conductive material.
4. The MRAM of claim 1 , wherein:
the conductive component is a conductive core and the magnetic component is disposed around at least a portion of the core.
5. The MRAM of claim 4 , wherein:
the magnetic component clads the conductive core.
6. The MRAM of claim 5 , wherein:
the magnetic component has two guiding portions that extend from the conductive core.
7. The MRAM of claim 5 , wherein:
the magnetic component is of a substantially U-shaped cross-sectional shape.
8. The MRAM of claim 1 , wherein:
the magnetic component is in contact with magnetic material of the magnetic memory cell.
9. The MRAM of claim 6 , wherein:
the at least one guiding portion of the magnetic component is in contact with the magnetic memory cell.
10. The MRAM of claim 1 , wherein:
the magnetic component is disposed remote from the magnetic memory cell.
11. The MRAM of claim 10 , wherein:
a thermal insulation layer is disposed between the magnetic memory cell and the magnetic component.
12. The MRAM of claim 11 , wherein:
the at least one guiding portion is in contact with the thermal insulation layer.
13. The MRAM of claim 12 , wherein:
a sense-conductor that is electrically connected to the magnetic material of the magnetic memory cell is disposed between the magnetic memory cell and the thermal insulation layer.
14. The MRAM of claim 1 , wherein the MRAM device is one of an array of magnetic memory devices.
15. A computer system comprising:
a central processing unit,
a main board coupled to the central processing unit and a plurality of magnetic memory devices coupled to the main board, each magnetic memory device comprising:
a magnetic memory cell switchable between two states under the influence of a magnetic field;
an electrical bit line coupled to the magnetic memory cell for generating the magnetic field, the electrical bit line comprising a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell;
a thermal insulator positioned between the conductive component and the magnetic memory cell, and the magnetic component having at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
16. A method of storing data in a magnetic memory device of the type having a magnetic memory cell switchable between two states on the application of a magnetic field to the cell, and a bit line for the generation of the magnetic field, the method comprising the steps of:
heating the magnetic memory cell,
applying an electrical current through the bit line to generate the magnetic field, and
guiding magnetic flux associated with the magnetic field through a magnetic component along a thermal insulator and towards the magnetic memory cell to facilitate switching of the cell.
17. The method of claim 16 wherein:
the step of guiding the magnetic flux through the magnetic component is conducted so that the magnetic flux is guided from the magnetic component directly to the magnetic material of the magnetic memory cell.
18. The method of claim 16 , wherein:
the step of guiding the magnetic flux through the magnetic component is conducted so that the magnetic flux is guided through the magnetic component and then penetrates through additional material that is disposed between the magnetic component and the magnetic material of the magnetic memory cell before the magnetic flux penetrates the magnetic memory cell.