Patent Assignment
Reel/Frame 019733/0202
Assignment of Assignor's Interest
Recorded: 2007-08-22
Pages: 33
Assignor
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Executed: 2007-05-18
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(50)
Magnetic Shielding for Reducing Magnetic Interference
Magnetic Memory Cell Having an Annular Data Layer and a Soft Reference Layer
Ultra-Violet Treatment of a Tunnel Barrier Layer Through an Overlayer a Tunnel Junction Device
Magnetic Memory Device with Larger Reference Cell
Patent:
6,707,710 →
Application:
10/318,520 →
Adjustable Offset Differential Amplifier
Simplified Magnetic Memory Cell
Computer System with Operating System Permitting Dynamic Adjustment of Main Memory
Magnetic Filter
Method of Providing Stability of a Magnetic Memory Cell
Patent:
6,785,160 →
Application:
10/425,352 →
Magnetic Shielding for Reducing Magnetic Interference
Multi-Bit Mram Device with Switching Nucleation Sites
Magnetic Memory Storage Device
Magnetoresistive Device Including Pinned Structure with a Layer That Provides Texture for Pinning
Retrieving Data Stored in a Magnetic Integrated Memory
Directional Ion Etching Process for Patterning Self-Aligned via Contacts
Magneto-Resistive Memory Device
System and Method for Reading a Memory Cell
Memory Cell Strings in a Resistive Cross Point Memory Cell Array
Memory Cell Strings in a Resistive Cross Point Memory Cell Array
Magnetic Memory Structure
Method and System Reading Magnetic Memory
Memory Device with a Thermally Assisted Write
Apparatus and Method for Generating a Write Current for a Magnetic Memory Cell
Patent:
6,791,873 →
Application:
10/658,442 →
Magnetic Memory with Error Correction Coding
Assisted memory device for reading and writing single and multiple units of data
Thermal-Assisted Switching Array Configuration for Mram
Resistive Cross Point Memory
Assymmetric Patterned Magnetic Memory
Patent:
6,794,697 →
Application:
10/677,394 →
Magnetic Memory Device with Current Carrying Reference Layer
Magnetic Memory Device
Magnetic Memory Device Including Groups of Series-Connected Memory Elements
Magnetic Memory Device
Patent:
6,839,271 →
Application:
10/685,618 →
Magnetic Memory Which Detects Changes Between First and Second Resistive States of Memory Cell
Patent:
6,847,544 →
Application:
10/689,144 →
Magnetic Memory Cell Having a Soft Reference Layer
Thermally-Assisted Magnetic Memory Structures
Patent:
6,819,586 →
Application:
10/692,841 →
Thin Film Device and a Method of Providing Thermal Assistance Therein
Regulating a Magnetic Memory Cell Write Current
Patent:
6,850,430 →
Application:
10/725,746 →
Mram Storage Device
Megnetic Memory Device
Soft-Reference Four Conductor Magnetic Memory Storage Device
Method of Fabricating a Compositionally Modulated Electrode in a Magnetic Tunnel Junction Device
Remote Sensed Pre-Amplifier for Cross-Point Arrays
Switching of Soft Reference Layers of Magnetic Memory Devices
Controlled Temperature, Thermal-Assisted Magnetic Memory Device
Soft-Reference Three Conductor Magnetic Memory Storage Device
Method of Fabricating a Mram Device
Two Conductor Thermally Assisted Magnetic Memory
Magnetic Memory Device
Series Diode Thermally Assisted Mram
Synchronous Counting Circuit
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.