Process for manufacturing semiconductor device and semiconductor device
A process for manufacturing a semiconductor device comprising the steps of: forming a transparent film on a semiconductor substrate including a photoelectric conversion section, the transparent film having a concave portion above the photoelectric conversion section; forming a material film on the transparent film, the material film being made of a photosensitive material having a refractive index higher than that of the transparent film; and irradiating selectively a predetermined portion of the material film with rays, and then developing the material film, whereby forming an intralayer lens having a convex portion facing into the concave portion.
1. A semiconductor device comprising: a semiconductor substrate including a photoelectric conversion section; a transparent film formed on the semiconductor substrate, the transparent film having a concave portion above the photoelectric conversion section; and an intralayer lens formed on the transparent film, the intralayer lens having a convex portion facing the concave portion, the intralayer lens being made of a photosensitive material having a refractive index higher than that of the transparent film.
2. The semiconductor device according to claim 1 , wherein the photosensitive material is an ultraviolet curing resin containing a metal oxide.
3. A semiconductor device comprising: a semiconductor substrate including a photoelectric conversion section; a transparent film formed on the semiconductor substrate, the transparent film having a concave portion above the photoelectric conversion section; and an intralayer lens formed on the transparent film, the intralayer lens having a convex portion facing the concave portion, the intralayer lens being made of a photosensitive material having a refractive index higher than that of the transparent film, wherein the photosensitive material is a resin, wherein the resin contains a metal oxide and becomes alkali-soluble by ultraviolet irradiation.
4. The semiconductor device according to claim 2 , wherein the metal oxide comprises at least one of a zirconium oxide and a titanium oxide.