Semiconductor device including ladder-shaped siloxane hydride and method for manufacturing same
View Patent ↗The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO 2 film 204 . Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.
1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film formed on an upper side of said semiconductor substrate, said first insulating film consisting essentially of ladder-shaped siloxane hydride; and
a second insulating film disposed adjacent to said first insulating film, said second insulating film containing oxygen and silicon as constituent elements.
2. The semiconductor device according to claim 1 , wherein said second insulating film comprises a compound selected from the group consisting of SiO 2 , SiOC, SiGN and SiOF.
3. The semiconductor device according to claim 1 , further comprising a metal interconnect embedded in a multilayer structure, said multilayer structure comprising said first insulating film and said second insulating film.
4. The semiconductor device according to claim 1 , wherein said semiconductor device is free of a guard ring.
5. The semiconductor device according to claim 1 , wherein said ladder-shaped siloxane hydride has a dielectric constant of not higher than 2.9.
6. The semiconductor device according to claim 1 , wherein said ladder-shaped siloxane hydride is a film being formed by being baked at a temperature within a range of from 200 degree C. to 400 degree C.
7. The semiconductor device according to claim 1 , wherein said ladder-shaped siloxane hydride has a film density within a range of from 1.50 g/cm 3 to 1.58 g/cm 3 .
8. The semiconductor device according to claim 1 , wherein said ladder-shaped siloxane hydride has a refraction index at a wavelength of 633 nm within a range of from 1.38 to 1.40.