Method of reading NAND memory to compensate for coupling between storage elements
View Patent ↗A method for reading a non-volatile memory arranged in columns and rows which reduces adjacent cell coupling, sometimes referred to as the Yupin effect. The method includes the steps of: selecting a bit to be read in a word-line; reading an adjacent word line written after the word line; and reading the selected bit in the word line by selectively adjusting at least one read parameter. In one embodiment, the read parameter is the sense voltage. In another embodiment, the read parameter is the pre-charge voltage. In yet another embodiment, both the sense and the pre-charge voltage are adjusted.
1. A method for reading a non-volatile memory arranged in columns and rows, comprising the steps of:
selecting a word-line WLn to be read;
reading an adjacent word line (WLn+1) written after word line WLn;
determining whether the adjacent word line has a threshold voltage greater than a check voltage; and
if the data state of the adjacent word line is above the check voltage, reading a selected bit in word line WLn by selectively adjusting at least a pre-charge voltage.
2. The method of claim 1 wherein the step of reading a selected bit in word line WLn further includes adjusting a sense voltage.
3. The method of claim 2 wherein the step of reading the selected bit includes increasing the sense voltage.
4. The method of claim 3 wherein the step of increasing the sense voltage includes increasing the sense voltage by an amount equal to a fraction of the maximum coupling effect of the adjacent bit on the selected bit.
5. The method of claim 4 wherein the fraction is one-half.
6. The method of claim 1 wherein the step of reading the selected bit includes decreasing the pre-charge voltage.
7. The method of claim 6 wherein the step of decreasing the pre-charge voltage includes decreasing the pre-charge voltage by an amount equal to a fraction of the maximum coupling effect of the adjacent bit on the selected bit.
8. The method of claim 1 wherein the check voltage is one half of a threshold voltage distribution.
9. The method of claim 1 wherein the bits hold a multi-state memory, the step of reading an adjacent word line includes determining the threshold voltage state of the bit.
10. The method of claim 9 wherein the step of reading an adjacent word line includes reading the bit at least three times.
11. The method of claim 10 wherein the step of reading the selected bit in the word line further includes decreasing a sense voltage by an amount equal to a coupling effect of the adjacent bit on the selected bit.
12. The method of claim 10 wherein the step of reading the selected bit includes increasing the pre-charge voltage by an amount equal to a coupling effect of the adjacent bit on the selected bit.
13. A method for reading a non-volatile memory arranged in columns and rows, comprising the steps of:
determining a selected bit to be read in a first word-line;
reading an adjacent word line written afire the first word line;
determining whether a bit adjacent to the selected bit has a threshold voltage greater than a check voltage; and
if the adjacent bit has a threshold voltage greater than the check voltage, reading the selected bit in said first word line by selectively adjusting at least a pre-charge voltage.
14. The method of claim 13 wherein the step of reading the selected bit in the first word line further includes adjusting a sense voltage.
15. The method of claim 14 wherein the step of reading the selected bit includes increasing the sense voltage.
16. The method of claim 15 wherein the step of increasing the sense voltage includes increasing the sense voltage by an amount equal to one-half of the maximum coupling effect of the adjacent bit on the selected bit.
17. The method of claim 16 wherein the step of reading the selected bit in the first word line includes decreasing the pre-charge voltage.
18. The method of claim 17 wherein the step of decreasing the pre-charge voltage includes decreasing the pre-charge voltage by an amount equal to one-half of the maximum coupling effect of the adjacent bit on the selected bit.
19. The method of claim 13 wherein the check voltage is one half of a threshold voltage distribution of a multi-state cell array.
20. A memory system including a code enabling reading data from the system, comprising:
an array of multi-state memory cells arranged in rows and columns;
a controller coupled to the array for executing said code, the code performing the steps of:
determining a selected bit to be read in a first row-line;
reading an adjacent row line written after the first row line;
determining whether a bit adjacent to the selected bit has a threshold voltage greater than a check voltage; and
if the adjacent bit has a threshold voltage greater than the check voltage, reading the selected bit in the first row line by selectively adjusting at least a pre-charge voltage.
21. The system of claim 20 wherein reading the selected bit in the first row line further includes adjusting a sense voltage.
22. The system of claim 21 wherein the step of reading the selected bit includes increasing the sense voltage.
23. The system of claim 20 wherein the step of reading the selected bit includes decreasing the pre-charge voltage.
24. The system of claim 20 wherein the step of reading the selected bit includes adjusting both the pre-charge voltage and a sense voltage.
25. The system of claim 20 wherein the check voltage is one half of a voltage threshold distribution of the multi-state cell array.