Apparatus and methods for maskless pattern generation
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.
1. An apparatus for forming a patterned layer during manufacture of an integrated circuit, comprising:
an elastic integrated circuit;
a plurality of exposure elements;
means for selectively irradiating with at least one type of radiant energy portions of a surface of a layer by electronically controlling individually each of the exposure elements; and
at least one stress-controlled dielectric layer.
2. The apparatus of claim 1 , wherein the at least one type of radiant energy is selected from the group consisting of optical, Deep Ultra Violet, X-ray, electron, proton, and particle beam.
3. The apparatus of claim 1 , wherein the exposure elements are miniature sources of at least one of the following types of radiant energy: X-ray, Deep Ultra Violet, and electron.
4. The apparatus of claim 1 , wherein the exposure elements control passage of radiant energy from an external source.
5. The apparatus of claim 4 , wherein the exposure elements control passage of radiant energy from an external source using at least one of the following mechanisms: electromagnetic deflection, electrostatic deflection and mechanical shuttering.
6. The apparatus of claim 1 , comprising means for separately focusing radiant energy emitted from each of multiple different exposure elements.
7. The apparatus of claim 1 , comprising means for:
ceasing irradiating the surface;
shifting the exposure elements with respect to the surface; and
resuming irradiating the surface.
8. The apparatus of claim 1 , wherein the stress of the at least one stress-controlled dielectric layer is less than about 8×10 8 dynes/cm 2 .
9. The apparatus of claim 8 , wherein the stress is tensile.
10. The apparatus of claim 1 , wherein the stress of the at least one stress-controlled dielectric layer is 2 to 100 times less than the fracture strength of the at least one stress-controlled dielectric layer.
11. The apparatus of claim 10 , wherein the stress is tensile.
12. The apparatus of claim 1 , wherein the plurality of exposure elements includes at least one million elements.
13. The apparatus of claim 1 , wherein the at least one stress-controlled dielectric layer is at least one of elastic and flexible.
14. The apparatus of claim 1 , wherein the at least one stress-controlled dielectric layer is capable of forming at least one of a flexible membrane and a free standing membrane.
15. The apparatus of claim 1 , wherein the at least one stress-controlled dielectric layer is selected from the group consisting of oxides of silicon, nitrides of silicon, silicon dioxide and silicon nitride.
16. The apparatus of claim 1 , further comprising a plurality of interconnect conductors formed within the at least one stress-controlled dielectric layer.
17. The apparatus of claim 1 , wherein the at least one stress-controlled dielectric layer is formed by at least one of Plasma Enhanced Chemical Vapor Deposition and multiple RF energy sources.
18. The apparatus of claim 1 , wherein the at least one stress-controlled dielectric layer is formed at a temperature of about 400° C.
19. The apparatus of claim 1 , further comprising at least one elastic dielectric layer.
20. An apparatus for forming a patterned layer during manufacture of an integrated circuit, comprising:
an elastic integrated circuit;
a plurality of exposure elements;
means for selectively irradiating with at least one type of radiant energy portions of a surface of a layer by electronically controlling individually each of the exposure elements; and
at least one elastic dielectric layer, wherein the stress of the at least one elastic dielectric layer is less than about 8×10 8 dynes/cm 2 .
21. The apparatus of claim 20 , wherein the stress is tensile.
22. An apparatus for forming a patterned layer during manufacture of an integrated circuit, comprising:
an elastic integrated circuit;
a plurality of exposure elements; and
means for selectively irradiating with at least one type of radiant energy portions of a surface of a layer by electronically controlling individually each of the exposure elements, wherein said plurality of exposure elements are formed on a substrate, said apparatus further comprising a stress-controlled dielectric layer formed at least one of over and on the substrate.
23. The apparatus of claim 22 , wherein the at least one type of radiant energy is selected from the group consisting of optical, Deep Ultra Violet, X-ray, electron, proton, and particle beam.
24. The apparatus of claim 22 , wherein the exposure elements are miniature sources of at least one of the following types of radiant energy: X-ray, Deep Ultra Violet, and electron.
25. The apparatus of claim 22 , wherein the exposure elements control passage of radiant energy from an external source.
26. The apparatus of claim 25 , wherein the exposure elements control passage of radiant energy from an external source using at least one of the following mechanisms: electromagnetic deflection, electrostatic deflection and mechanical shuttering.
27. The apparatus of claim 22 , comprising means for separately focusing radiant energy emitted from each of multiple different exposure elements.
28. The apparatus of claim 22 , comprising means for:
ceasing irradiating the surface;
shifting the exposure elements with respect to the surface; and
resuming irradiating the surface.
29. The apparatus of claim 22 , wherein the stress of the at least one stress-controlled dielectric layer is less than about 8×10 8 dynes/cm 2 .
30. The apparatus of claim 29 , wherein the stress is tensile.
31. The apparatus of claim 22 , further comprising at least one elastic dielectric layer.
32. The apparatus of claim 31 , wherein the stress of the at least one elastic dielectric layer is less than about 8×10 8 dynes/cm 2 .
33. The apparatus of claim 32 , wherein the stress is tensile.
34. The apparatus of claim 22 , wherein the plurality of exposure elements includes at least one million elements.
35. The apparatus of claim 22 , wherein the stress of the at least one stress-controlled dielectric layer is 2 to 100 times less than the fracture strength of the at least one stress-controlled dielectric layer.
36. The apparatus of claim 35 , wherein the stress is tensile.
37. The apparatus of claim 22 , wherein the at least one stress-controlled dielectric layer is at least one of elastic and flexible.
38. The apparatus of claim 22 , wherein the at least one stress-controlled dielectric layer is capable of forming at least one of a flexible membrane and a free standing membrane.
39. The apparatus of claim 22 , wherein the at least one stress-controlled dielectric layer is selected from the group consisting of oxides of silicon, nitrides of silicon, silicon dioxide and silicon nitride.
40. The apparatus of claim 22 , further comprising a plurality of interconnect conductors formed within the at least one stress-controlled dielectric layer.
41. The apparatus of claim 22 , wherein the at least one stress-controlled dielectric layer is formed by at least one of Plasma Enhanced Chemical Vapor Deposition and multiple RF energy sources.
42. The apparatus of claim 22 , wherein the at least one stress-controlled dielectric layer is formed at a temperature of about 400° C.