Method of electroplating copper layers with flat topography
View Patent ↗A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.
1. A method of electrochemically filling cavities on a wafer surface to form a substantially planar conductive layer, comprising:
applying a first cathodic current to form a first conductive layer on the wafer surface, the wafer having a first cavity and a second cavity, wherein the first cavity has the smallest width and the second cavity has a larger width than the first cavity, and wherein the first and the second cavities are less than 10 micrometers in width;
treating a surface of the first conductive layer by applying a first anodic current waveform having a first number of pulses after applying the first cathodic current;
applying a second cathodic current to form a second conductive layer on the first conductive layer after applying the first anodie current waveform; and
treating a surface of the second conductive layer by applying a second anodic current waveform having a second number of pulses after applying the second cathodic current,
wherein the second anodic current waveform has a longer duration than the first anodic current waveform and wherein the second number is greater than the first number.
2. The method of claim 1 , wherein the step of treating the surface of the first conductive layer prevents bump formation on the surface of the first conductive layer.
3. The method of claim 1 , wherein the steps of applying first and second cathodic currents comprise applying DC voltage.
4. The method of claim 1 , wherein the steps of applying first and second cathodic currents comprise applying AC voltage.
5. The method of claim 1 , further comprising repeating the steps of treating and applying until all the cavities on the wafer surface are filled.
6. A method to electrochemically fill a plurality of cavities on a wafer surface comprising:
applying a first cathodic current to fill a first cavity and partially fill a second cavity with a first conductive layer on the wafer surface, the first cavity having a smaller width than the second cavity wherein the first cavity and the second cavity each include a width less than 10 micrometers;
applying a first anodic current waveform having a first number of pulses to treat the first conductive layer after applying the first cathodic current;
applying a second cathodic current to fill the second cavity with a second conductive layer to form a substantially planar conductive layer over the first cavity and the second cavity after applying the first anodic current waveform; and
applying a second anodic current waveform having a second number of pulses to treat the second conductive layer after applying the second cathodic current,
wherein the second anodic current waveform has a longer duration than the first anodic current waveform and wherein the second number is greater than the first number.
7. The method of claim 6 , wherein applying the first cathodic current includes applying a cathodic DC waveform.
8. The method of claim 6 , wherein applying the first cathodic current includes applying a cathodic AC waveform.
9. The method of claim 6 , wherein the anodic current pulses are each approximately 1 second in duration.
10. A method of electrochemically filling cavities on a wafer surface to form a planar conductive layer, comprising:
providing a first cavity with a smallest width and a second cavity having a larger width than the first cavity, wherein the first and second cavities are less than 10 micrometers in width;
applying a first cathodic current waveform to form a first conductive layer on the wafer surface;
treating the first conductive layer by applying a first anodic current waveform having a first number of pulses after applying the first cathodic current;
applying a second cathodic current waveform to form a second conductive layer on the first conductive layer after applying the first anodic current waveform, the second conductive layer having a planar portion over the first cavity; and
treating the second conductive layer by applying a second anodic current waveform having a second number of pulses after applying the second cathodic current,
wherein the second cathodic current waveform has a longer duration than the first cathodic current waveform and the second anodic current waveform has a longer duration than the first anodic current waveform, and wherein the second number is greater than the first number.
11. The method of claim 10 , wherein applying the first cathodic current includes applying a cathodic rectangular waveform.
12. The method of claim 10 , wherein the planar conductive layer is copper.
13. The method of claim 1 , wherein the step of applying the first cathodic current comprises forming the first conductive layer including a planar portion over the first cavity and a non-planar portion over the second cavity.
14. The method of claim 1 , wherein the step of applying the second cathodic current comprises forming the second conductive layer including a planar portion over both the first and second cavities.
15. The method of claim 1 , wherein the step of treating the surface of the second conductive layer prevents bump formation on the surface of the second conductive layer.
16. The method of claim 1 , wherein the second cathodic current is applied for a longer time than the first cathodic current.
17. The method of claim 6 , wherein applying the second cathodic current includes applying a cathodic DC waveform.
18. The method of claim 6 , wherein applying the second cathodic current includes applying a cathodic AC waveform.
19. The method of claim 6 , wherein the second cathodic current is applied for a longer time than the first cathodic current.
20. The method of claim 10 , wherein the second cathodic current waveform is a cathodic rectangular waveform.
21. The method of claim 10 , wherein the first anodic current waveform includes a plurality of anodic current pulses of approximately 1 second in duration.
22. The method of claim 10 , wherein the second anodic current wavefonn includes a plurality of anodic current pulses of approximately 1 second in duration.
23. The method of claim 10 , wherein applying the first cathodic current waveform comprises forming the first conductive layer including a planar portion over the first cavity and a non-planar portion over the second cavity.
24. The method of claim 23 , wherein the first cavity is filled and the second cavity is unfilled.