Manufacturing method for wiring
View Patent ↗In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.
1. A manufacturing method for wiring, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
2. A manufacturing method for wiring, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
irradiating an ultraviolet ray on the first resist layer and the second resist layer via a photo mask;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask, under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
3. A manufacturing method for wiring according to claim 1 or 2 , wherein the first conductive layer and the second conductive layer are formed using a metal mask in a selective manner.
4. A manufacturing method for wiring according to claim 1 or 2 , wherein the compound contains a photosensitive agent.
5. A manufacturing method for wiring according to claim 1 or 2 , wherein the plasma generating means has first and second electrodes, and the first electrode surrounds the periphery of the second electrode and has a cylindrical shape having a nozzle-like supply port for the gas at tips thereof.
6. A manufacturing method for wiring according to claim 1 or 2 , wherein the plasma generating means has first and second electrodes, gas supplying means that introduces a gas between the first and the second electrodes, and a power supply that applies a voltage to the first or the second electrodes.
7. A manufacturing method for a display device, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
8. A manufacturing method for a display device according to claim 7 , wherein the first conductive layer and the second conductive layer are formed using a metal mask in a selective manner.
9. A manufacturing method for a display device according to claim 7 , wherein the compound contains a photosensitive agent.
10. A manufacturing method for a display device according to claim 7 , wherein the plasma generating means has first and second electrodes, and the first electrode surrounds the periphery of the second electrode and has a cylindrical shape having a nozzle-like supply port for the gas at tips thereof.
11. A manufacturing method for a display device according to claim 7 , wherein the plasma generating means has first and second electrodes, gas supplying means that introduces a gas between the first and the second electrodes, and a power supply that applies a voltage to the first or the second electrodes.
12. A manufacturing method for a display device, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
irradiating an ultraviolet ray on the first resist layer and the second resist layer via a photo mask;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask, under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
13. A manufacturing method for a display device according to claim 12 , wherein the first conductive layer and the second conductive layer are formed using a metal mask in a selective manner.
14. A manufacturing method for a display device according to claim 12 , wherein the compound contains a photosensitive agent.
15. A manufacturing method for a display device according to claim 12 , wherein the plasma generating means has first and second electrodes, and the first electrode surrounds the periphery of the second electrode and has a cylindrical shape having a nozzle-like supply port for the gas at tips thereof.
16. A manufacturing method for a display device according to claim 12 , wherein the plasma generating means has first and second electrodes, gas supplying means tat introduces a gas between the first and the second electrodes, and a power supply that applies a voltage to the first or the second electrodes.
17. A manufacturing method for wiring, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound from a nozzle to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
scanning the substrate during the discharging of the compound;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
18. A manufacturing method for wiring according to claim 17 , wherein the first conductive layer and the second conductive layer are formed using a metal mask in a selective manner.
19. A manufacturing method for wiring according to claim 17 , wherein the plasma generating means has first and second electrodes, and the first electrode surrounds the periphery of the second electrode and has a cylindrical shape having a nozzle-like supply port for the gas at tips thereof.
20. A manufacturing method for wiring according to claim 17 , wherein the plasma generating means has first and second electrodes, gas supplying means that introduces a gas between the first and the second electrodes, and a power supply that applies a voltage to the first or the second electrodes.
21. A manufacturing method for wiring, comprising:
forming a first conductive layer and a second conductive layer over a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method;
discharging a compound from a nozzle to selectively form a first resist layer over the first conductive layer and to selectively form a second resist layer over the second conductive layer wherein the first resist layer comprises a first resist mask selectively provided over the first conductive layer and wherein the second resist layer comprises a second resist mask selectively provided over the second conductive layer;
scanning the nozzle during the discharging of the compound;
etching the first conductive layer and the second conductive layer with plasma generating means using the first resist mask and the second resist mask under an atmospheric pressure or a pressure close to the atmospheric pressure; and
ashing the first resist mask and the second resist mask with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure.
22. A manufacturing method for wiring according to claim 21 , wherein the first conductive layer and the second conductive layer are formed using a metal mask in a selective manner.
23. A manufacturing method for wiring according to claim 21 , wherein the plasma generating means has first and second electrodes, and the first electrode surrounds the periphery of the second electrode and has a cylindrical shape having a nozzle-like supply port for to gas at tips thereof.
24. A manufacturing method for wiring according to claim 21 , wherein the plasma generating means has first and second electrodes, gas supplying means that introduces a gas between the first and the second electrodes, and a power supply that applies a voltage to the first or the second electrodes.