IP Library Granted Patent US 6,894,293
Granted Patent B2
US 6,894,293 · App. 10/770,476 · Granted May 17, 2005

System for recycling gases used in a lithography tool

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Quick Facts
Patent No.
US 6,894,293
App. No.
10/770,476
Granted
May 17, 2005
Kind
B2
Abstract

A system and method are used to isolate a first gas from a second gas using a third gas. A first chamber includes an element that emits light based on a first gas. A second chamber uses the emitted light to perform a process and includes the second gas. A gaslock that couples the first chamber to the second chamber. A gas source supplies a third gas between the first and the second gas in the gaslock, such that the first gas is isolated from the second gas in the gaslock. The first and third gas can be pumped from the first chamber and separated from one another, such that the first gas can be recycled for reuse to form the emitting light.

Claims (28)

1. A system comprising:

a gaslock that receives therein a first gas from a first portion of a lithography tool and a second gas from a second portion of the lithography tool;

a gas source that directs a third gas between the first gas and the second gas in the gaslock to isolate the first gas from the second gas;

a pump that pumps the first and third gas; and

a recycling device that receives the first and third gas from the pump, which separates the first gas from the third gas so that the first gas can be reused.

2. The system of claim 1 , wherein said first gas is selected from the group consisting of xenon, lithium vapor, tin, krypton, and water vapor.

3. The system of claim 1 , wherein said second gas is selected from the group consisting of helium, argon, hydrogen, and nitrogen.

4. The system of claim 1 , wherein said third gas is selected from the group consisting of helium, neon, and nitrogen.

5. The system of claim 1 , wherein the pump and the recycling device are coupled to and outside of the first portion.

6. The system of claim 1 , wherein:

the first portion is a light source chamber; and

the second portion is an optics chamber.

7. The system of claim 6 , wherein the light source chamber comprises a plasma light source.

8. The system of claim 7 , wherein the first portion comprises a plasma light source that produces extreme ultra violet wavelengths of light.

9. A system comprising:

a means for receiving a first gas from a first portion of a lithography tool and a second gas from a second portion of the lithography tool therein;

a means for directing a third gas between the first gas and the second gas to isolate the first gas from the second gas;

a means for pumping the first and third gas; and

a means for separating the first from the third gas after receiving the first gas and the third gas from the means for pumping, such that the first gas can be reused.

10. The system of claim 9 , wherein said first gas is selected from the group consisting of xenon, lithium vapor, tin, krypton, and water vapor.

11. The system of claim 9 , wherein said second gas is selected from the group consisting of helium, argon, hydrogen, and nitrogen.

12. The system of claim 9 , wherein said third gas is selected from the group consisting of helium, neon, and nitrogen.

13. The system of claim 9 , wherein the means for separating and the means for pumping are coupled to and outside of the first portion.

14. The system of claim 9 , wherein:

the first portion is a light source chamber; and

the second portion is an optics chamber.

15. The system of claim 9 , wherein the first portion comprises a plasma light source.

16. The system of claim 9 , wherein the first portion comprises a plasma light source that produces light having wavelengths in an extreme ultra violet spectrum.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2004
From: ROUX, STEPHEN
To: ASML HOLDING N.V.
Reel/Frame 014958/0778 →