Compositions of matter and barrier layer compositions
View Patent ↗In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.
1. A composition of matter consisting essentially of (CH 3 ) x Si 3 N (4−x) , with x being greater than 0 and no greater than 4, and Si 3 N y where y is about 4/3, the concentration of (CH 3 ) x Si 3 N (4−x) being from greater than 0 mole % to about 20 mole %.
2. The composition of claim 1 wherein x is from about 1 to about 4.
3. The composition of claim 1 wherein x is about 0.7.