Patent Assignment
Reel/Frame 030055/0337
Assignment of Assignor's Interest
Recorded: 2013-03-19
Pages: 9
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2013-03-18
Assignee
ROUND ROCK RESEARCH, LLC
P. O. BOX 1042, MOUNT KISCO, NEW YORK, 10549
Covered Properties
(41)
Panarization Process with Abrasive Polishing Slurry That Is Selective to a Planarized Surface
Patent:
6,062,952 →
Application:
08/869,256 →
Highly Conductive Composite Polysilicon Gate for Cmos Integrated Circuits
Method for Forming Dual Damascene Structures
Patent:
6,204,166 →
Application:
09/137,525 →
Integrated Circuit with Oxidation-Resistant Polymeric Layer
Patent:
6,288,442 →
Application:
09/145,012 →
Semiconductor Devices, and Semiconductor Processing Methods
Forming Submicron Integrated-Circuit Wiring from Gold,Silver,Copper, and Other Metals
Patent:
6,211,049 →
Application:
09/256,123 →
Forming Submicron Integrated-Circuit Wiring from Gold, Silver, Copper and Other Metals
Patent:
6,208,016 →
Application:
09/256,124 →
Hydrophobic Foamed Insulators for High Density Circuits
Patent:
7,276,788 →
Application:
09/382,524 →
Methods and Apparatus for Making Integrated-Circuit Wiring from Copper, Silver, Gold, and Other Metals
Patent:
6,429,120 →
Application:
09/488,098 →
Integrated Circuitry Including a Capacitor with an Amorphous and a Crystalline High K Capacitor Dielectric Region
Patent:
7,005,695 →
Application:
09/512,149 →
Planarization Process with Abrasive Poli Shing Slurry That Is Selective to a Planarized Surface
Patent:
6,379,225 →
Application:
09/569,921 →
Multilevel copper interconnects with low-k dielectrics and air gaps
Patent:
6,423,629 →
Application:
09/583,514 →
Compositions of Matter
Patent:
6,719,919 →
Application:
09/641,826 →
Damascene Structure and Method of Making
Patent:
6,451,683 →
Application:
09/648,465 →
Forming Submicron Integrated-Circuit Wiring from Gold, Silver, Copper, and Other Metals
Methods of Forming a Capacitor with an Amorphous and a Crystalline High K Capacitor Dielectric Region
A Mask Ona Polymer Having an Opening Width Less Than That of the Opening in the Polymer
Highly Conductive Composite Polysilicon Gate for Cmos Integrated Circuits
Damascene Structure and Method of Making
Multilevel Copper Interconnects with Low-K Dielectrics and Air Gaps
Damascene Structure with Low Dielectric Constant Insulating Layers
A Memory System with Conductive Structures Embedded in Foamed Insulator
Insulators for High Density Circuits
Insulators for High Density Circuits
Methods and Apparatus for Making Integrated-Circuit Wiring from Copper, Silver, Gold, and Other Metals
Atomic Layer Deposited Hfsion Dielectric Films Wherein Each Precursor Is Independendently Pulsed
High Performance Three-Dimensional Tft-Based Cmos Inverters, and Computer Systems Utilizing Such Novel Cmos Inverters
Atomic Layer Deposited Dielectric Layers
High Performance Three-Dimensional Tft-Based Cmos Inverters, and Computer Systems Utilizing Such Novel Cmos Inverters
Computer Systems Utilizing High Performance Three-Dimensional TFT-Based CMOS Inverters
Application:
10/760,087 →
Publication:
US 2004/0145399
Compositions of Matter and Barrier Layer Compositions
Multilevel Copper Interconnects with Low-K Dielectrics and Air Gaps
Methods and Apparatus for Making Integrated-Circuit Wiring from Copper, Silver, Gold, and Other Metals
Compensating the Workfunction of a Metal Gate Transistor for Abstraction by the Gate Dielectric Layer
DEVICES WITH HFSiON DIELECTRIC FILMS WHICH ARE HF-O RICH
Electronic Apparatus with Deposited Dielectric Layers
Capacitor Including a Percentage of Amorphous Dielectric Material and a Percentage of Crystalline Dielectric Material
Subresolution Silicon Features and Methods for Forming the Same
Methods and Apparatus for Making Integrated-Circuit Wiring from Copper, Silver, Gold, and Other Metals
Subresolution Silicon Features and Methods for Forming the Same
Subresolution Silicon Features and Methods for Forming the Same
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 28, 2009
From: MICRON TECHNOLOGY, INC.
To: APTINA IMAGING CORPORATION
Reel/Frame 023245/0186 →
Submission to Confirm That Assignment at Reel/Frame 023245/0186 Was Erroneously Recorded Against the Identified Patents/Application.
Feb 17, 2010
From: MICRON TECHNOLOGY, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 023957/0323 →