Semiconductor device capable of adjusting input resistance without changing input terminal capacitance
View Patent ↗A semiconductor device is capable of adjusting an input resistance without changing an input terminal capacitance. The capacitance formed by a capacitive wiring and a comb-shaped wiring can be adjusted by changing the length of the capacitive wiring. The resistance between the capacitive wiring and the ground potential can be adjusted by changing the positions of contacts which interconnect the capacitive wiring and a resistive wiring. Since the resistance can be adjusted simply by changing the connections of the contacts, only the input resistance can be adjusted without changing the input terminal capacitance.
1. A semiconductor device having a plurality of input terminals, comprising:
a comb-shaped wiring disposed around a bonding pad which serves as each of the input terminal, at the same potential as said bonding terminal, said comb-shaped wiring having cavities and fingers at constant spaced intervals;
a capacitive wiring disposed in facing relation to said comb-shaped wiring and having fingers positioned respectively in said cavities of said comb-shaped wiring in an interdigitating fashion; and
a resistive wiring disposed underneath said capacitive wiring and connected to said capacitive wiring by a plurality of contacts, said resistive wiring having ends connected to a ground potential.
2. A semiconductor device according to claim 1 , wherein said bonding pad is rectangular in shape, and said comb-shaped wiring and said capacitive wiring are disposed in covering around relation to three sides of said bonding pad.
3. A semiconductor device having a plurality of input terminals, comprising:
a comb-shaped wiring disposed around a bonding pad which serves as each of the input terminal, at the same potential as said bonding terminal, said comb-shaped wiring having cavities and fingers at constant spaced intervals;
a capacitive wiring disposed in facing relation to said comb-shaped wiring and having fingers positioned respectively in said cavities of said comb-shaped wiring in an interdigitating fashion;
a resistive wiring disposed in a lower layer outside of a position where said capacitive wiring is disposed, and connected by a plurality of contacts to a layer in which said bonding pad is disposed, said resistive wiring having ends connected to a ground potential; and
joint wirings interconnecting said contacts and said capacitive wiring in said layer in which said bonding pad is disposed.
4. A semiconductor device according to claim 3 , wherein said bonding pad is rectangular in shape, and said comb-shaped wiring and said capacitive wiring are disposed in covering around relation to three sides of said bonding pad.