Method of forming a non-volatile resistance variable device
View Patent ↗A method of metal doping a chalcogenide material includes forming a metal over a substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through the chalcogenide material to the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal outwardly into the chalcogenide material. A method of metal doping a chalcogenide material includes surrounding exposed outer surfaces of a projecting metal mass with chalcogenide material. Irradiating is conducted through the chalcogenide material to the projecting metal mass effective to break a chalcogenide bond of the chalcogenide material at an interface of the projecting metal mass outer surfaces and diffuse at least some of the projecting metal mass outwardly into the chalcogenide material. In certain aspects, the above implementations are incorporated in methods of forming non-volatile resistance variable devices. In one implementation, a non-volatile resistance variable device in a highest resistance state for a given ambient temperature and pressure includes a resistance variable chalcogenide material having metal ions diffused therein. Opposing first and second electrodes are received operatively proximate the resistance variable chalcogenide material. At least one of the electrodes has a conductive projection extending into the resistance variable chalcogenide material.
1. A method of forming a non-volatile resistance variable device comprising:
forming a substrate;
forming a projecting metal mass having an exposed outer surface on said substrate;
surrounding said exposed outer surface of said projecting metal mass with chalcogenide material;
diffusing a portion of said projecting metal mass outwardly into a portion of said chalcogenide material; and
forming an electrode over said chalcogenide material.
2. The method of claim 1 wherein the step of forming a projecting metal mass having an exposed outer surface further comprises the steps of:
forming a metal layer over said substrate; and
patterning said metal layer into a projecting metal mass having an exposed outer surface.
3. The method of claim 1 wherein said exposed outer surface of said projecting metal mass further comprises joining a top metal surface with opposing side metal surfaces at respective angles.
4. The method of claim 1 wherein said exposed outer surface of said projecting metal mass further comprises joining a top metal surface with opposing side metal surfaces at respective angles within about 15 degrees of normal.
5. The method of claim 1 wherein said portion of said projecting metal mass diffused outwardly into said chalcogenide material comprises less than all of said projecting metal mass.
6. The method of claim 5 wherein a portion of said projecting metal mass that is not diffused outwardly into said chalcogenide material is smaller but is substantially the same shape as said projecting metal mass before said portion of said projecting metal mass is diffused into said chalcogenide material.
7. The method of claim 1 wherein said portion of said projecting metal mass diffused outwardly into said chalcogenide material comprises all of said projecting metal mass.
8. The method of claim 1 wherein the step of surrounding said exposed outer surface of said projecting metal mass with chalcogenide material further comprises blanket deposition of chalcogenide material.
9. The method of claim 1 wherein the step of diffusing a portion of said projecting metal mass outwardly into said chalcogenide material further comprises irradiating through said chalcogenide material to said projecting metal mass.
10. The method of claim 9 wherein said step of irradiating further comprises irradiating through said chalcogenide material to said projecting metal mass with electromagnetic radiation having a wavelength less than about 500 nanometers.
11. The method of claim 10 wherein said electromagnetic radiation has a wavelength of about 404 nanometers to about 408 nanometers.
12. The method of claim 10 wherein said electromagnetic radiation has a wavelength of about 405 nanometers.
13. The method of claim 1 further comprising the step of substantially selectively etching a portion of said chalcogenide material into which a portion of projecting metal mass has not been diffused, before said step of forming an electrode over said chalcogenide material.
14. The method of claim 13 wherein said step of substantially selectively etching comprises dry anisotropic etching.
15. The method of claim 13 wherein said step of substantially selectively etching comprises dry anisotropic etching using a gas chemistry comprising CF 4 .
16. A method of forming a non-volatile resistance variable device comprising:
forming a first metal layer over a substrate;
forming a second metal layer on said first metal layer;
patterning said second metal layer into a structure having an outer surface and exposing said first metal layer;
blanket depositing a chalcogenide material over said substrate on said second metal structure outer surface and on said exposed first metal layer; and
diffusing a portion of said of said patterned second metal outwardly into a portion of said chalcogenide material.
17. The method of claim 16 further comprising the steps of:
substantially selectively etching a portion of said chalcogenide material into which a portion of said patterned second metal has not been diffused; and
after said step of substantially selectively etching, forming an outer electrode over a remaining portion of said chalcogenide material into which said portion of said patterned second metal has been diffused.
18. The method of claim 17 wherein said step of substantially selectively etching comprises dry anisotropic etching.
19. The method of claim 17 wherein said step of substantially selectively etching comprises dry anisotropic etching using a gas chemistry comprising CF 4 .
20. The method of claim 16 wherein said portion of said patterned second metal diffused outwardly into said chalcogenide material comprises less than all of said patterned second metal.
21. The method of claim 20 wherein a portion of said patterned second metal that is not diffused outwardly into said chalcogenide material is smaller but is substantially the same shape as said patterned second metal before said portion of said patterned second metal is diffused into said chalcogenide material.
22. The method of claim 16 wherein said portion of said patterned second metal diffused outwardly into said chalcogenide material comprises all of said patterned second metal.
23. The method of claim 16 wherein the step of diffusing a portion of said patterned second metal outwardly into said chalcogenide material further comprises irradiating through said chalcogenide material to said patterned second metal.
24. The method of claim 23 wherein said step of irradiating further comprises irradiating through said chalcogenide material to said patterned second metal with electromagnetic radiation having a wavelength less than about 500 nanometers.
25. The method of claim 24 wherein said electromagnetic radiation has a wavelength of about 404 nanometers to about 408 nanometers.
26. The method of claim 24 wherein said electromagnetic radiation has a wavelength of about 405 nanometers.