Patent Assignment
Reel/Frame 039974/0496
Assignment of Assignor's Interest
Recorded: 2016-09-01
Pages: 60
Assignor
MICRON TECHNOLOGY, INC
Executed: 2016-08-29
Assignee
OVONYX MEMORY TECHNOLOGY, LLC
1940 DUKE STREET, SUITE 200, ALEXANDRIA, VIRGINIA, 22314
Covered Properties
(535)
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices
Memory Arrays
Integrated Circuit Having Memory Cell Array Including Barriers, and Method of Manufacturing Same
Advanced Bitwise Operations and Apparatus in a Multi-Level System with Nonvolatile Memory
Bitwise Operations and Apparatus in a Multi-Level System
Memory Architecture and Cell Design Employing Two Access Transistors
Techniques for Reducing Disturbance in a Semiconductor Memory Device
Recessed Gate Silicon-on-Insulator Floating Body Device with Self-Aligned Lateral Isolation
Techniques for Providing a Semiconductor Memory Device
Method for Analyzing Demographic Data
Application:
14/480,252 →
Publication:
US US20150019536A1
Techniques for Providing a Direct Injection Semiconductor Memory Device
Methods for Sensing Memory Elements in Semiconductor Devices
Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same
Memory Devices
Memory Devices Having Electrodes Comprising Nanowires
Unidirectional Spin Torque Transfer Magnetic Memory Cell Structure
Memory Cell Structures
Apparatuses and Methods for Efficient Write in a Cross-Point Array
Stt-Mram Cell Structures
Memory Cells Having a Plurality of Resistance Variable Materials
Memory Cells with Rectifying Device
Memory Arrays and Methods of Forming Memory Cells
Application:
14/611,011 →
Publication:
US US20150144864A1
Techniques for Providing a Semiconductor Memory Device
Memory Devices Including Phase Change Material Elements
Resistive Memory Architectures with Multiple Memory Cells Per Access Device
Method, System, and Device for Phase Change Memory Switch Wall Cell with Approximately Horizontal Electrode Contact
Thyristor-Based Memory Cells, Devices and Systems Including the Same and Methods for Forming the Same
Permutational Memory Cells
Selective Reading of Memory with Improved Accuracy
Horizontally Oriented and Vertically Stacked Memory Cells
Metallization Scheme for Integrated Circuit
Apparatuses Including Cross Point Memory Arrays and Biasing Schemes
Apparatus and Methods to Provide Power Management for Memory Devices
Digital Filters with Memory
Cross-Point Memory Compensation
Devices and Methods to Program a Memory Cell
Resistive Ram Devices and Methods
Semiconductor Constructions, and Methods of Forming Cross-Point Memory Arrays
Integrated Circuits Using Optical Waveguide Interconnects Formed Through a Semiconductor Wafer and Methods for Forming Same
Patent:
6,090,636 →
Application:
09/031,961 →
Testing System for Evaluating Integrated Circuits a Burn-in Testing System, and a Method for Testing an Integrated Circuit
Patent:
6,119,255 →
Application:
09/009,973 →
Testing system for evaluating integrated circuits, a burn-in testing system, and a method for testing an integrated circuit
Patent:
6,189,120 →
Application:
09/515,975 →
Circuit Synthesis Time Budgeting Based Upon Wireload Information
Patent:
6,233,724 →
Application:
09/183,782 →
Self-Aligned, Magnetoresitive Random-Access Memory (Mram) Structure Utilizing a Spacer Containment Scheme
Patent:
6,358,756 →
Application:
09/777,888 →
Mram Architecture Using Offset Bits for Increased Write Selectivity
Patent:
6,424,561 →
Application:
09/618,504 →
Mram Architectures for Increased Write Selectivity
Two-Way Voice Recognition and Dialect System
Patent:
6,424,935 →
Application:
09/628,754 →
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Patent:
6,440,871 →
Application:
09/639,550 →
Three-Dimensional Magnetic Memory Array with a Minimal Number of Access Conductors Therein
Patent:
6,473,328 →
Application:
09/944,965 →
Resistive Memory Element Sensing Using Averaging
Patent:
6,504,750 →
Application:
09/938,617 →
Self-Aligned, Magnetoresitive Random-Access Memory (Mram) Structure Utilizing a Spacer Containment Scheme
Mram Architectures for Increased Write Selectivity
Recessed Magnetic Storage Element and Method of Formation
Single Ended Row Select for a Mram Device
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Insulation of an Mram Device Through a Self-Aligned Spacer
Method and Apparatus for Comparing Communication Service Plans Based on Usage Statistics
Patent:
6,631,185 →
Application:
09/602,204 →
Method of Retaining Memory State in a Programmable Conductor Ram
Microcavity Discharge Device for Euv Lithography and Other Related Applications
Patent:
6,657,370 →
Application:
09/641,521 →
Methods of Fabricating an Mram Device Using Chemical Mechanical Polishing
Magnetoresistive Random Access Memory (Mram) Cell Patterning
Patent:
6,677,165 →
Application:
10/393,713 →
Method for Forming Minimally Spaced Mram Structures
Method for Forming Minimally Spaced Mram Structures
Antiferromagnetically Stabilized Pseudo Spin Valve for Memory Applications
Method of Forming a Chalcogenide Comprising Device
Chalcogenide Comprising Device
Methods of Metal Doping a Chalcogenide Material
Synthetic-Ferrimagnet Sense-Layer for High Density Mram Applications
Dual Write Cycle Programmable Conductor Memory System and Method of Operation
Method of Fabricating Dual Pcram Cells Sharing a Common Electrode
Bad Pixel Detection and Correction in an Image Sensing Device
Compensation for Optical Distortion at Imaging Plane
Patent:
6,738,057 →
Application:
09/354,930 →
Graphics Data Compression Method and System
Patent:
6,747,661 →
Application:
09/507,776 →
Minimally Spaced Mram Structures
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Single Ended Row Select for a Mram Device
Single Supply Voltage, Nonvolatile Phase Change Memory Device with Cascoded Column Selection and Simultaneous Word Read/Write Operations
Hybrid Mram Array Structure and Operation
Methods of Increasing Write Selectivity in an Mram
Integrated Circuits Using Optical Waveguide Interconnects Formed Through a Semiconductor Wafer and Methods for Forming Same
Patent:
6,777,715 →
Application:
09/618,648 →
Microstructures Including Hydrophilic Particles
Patent:
6,780,491 →
Application:
09/621,496 →
Methods of Forming Magnetoresistive Memory Device Assemblies
Methods of Forming Magnetoresistive Memory Device Assemblies
Magnetoresistive Memory Device Assemblies
Combination Etch Stop and in Situ Resistor in a Magnetoresistive Memory and Methods for Fabricating Same
Methods of Increasing Write Selectivity in an Mram
Complementary Bit Pcram Sense Amplifier and Method of Operation
Methods and Apparatus for Measuring Current as in Sensing a Memory Cell
Patent:
6,795,359 →
Application:
10/457,366 →
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Recessed Magnetic Storage Element and Method of Formation
Write Current Shunting Compensation
Multiple Data State Memory Cell
Method of Retaining Memory State in a Programmable Conductor Ram
System and Method for Sensing Data Stored in a Resistive Memory Element Using One Bit of a Digital Count
Resistive Memory Element Sensing Using Averaging
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Dual Loop Sensing Scheme for Resistive Memory Elements
Programmable Conductor Memory Cell Structure and Method Therefor
Methods and Apparatus for Resistance Variable Material Cells
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Two-Way Speech Recognition and Dialect System
Thin Film Diode Integrated with Chalcogenide Memory Cell
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Programmable Conductor Memory Cell Structure
Method to Control Silver Concentration in a Resistance Variable Memory Element
Head Up Display with Adjustable Transparency Screen
Patent:
6,864,927 →
Application:
08/775,430 →
Single-Polarity Programmable Resistance-Variable Memory Element
Stacked 1T-Nmtj Mram Structure
Minimally Spaced Mram Structures
Method and Apparatus Providing Mram Devices with Fine Tuned Offset
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Resistance Variable 'on' Memory
Apparatus and Method for Dual Cell Common Electrode Pcram Memory Device
Antiferromagnetically Stabilized Pseudo Spin Valve for Memory Applications
Multiple Data State Memory Cell
Dual Loop Sensing Scheme for Resistive Memory Elements
Tilted Array Geometry for Improved Mram Switching
Diode/Superionic Conductor/Polymer Memory Structure
Memory Device and Methods of Controlling Resistance Variation and Resistance Profile Drift
Contact Structure, Phase Change Memory Cell, and Manufacturing Method Thereof with Elimination of Double Contacts
Method and Apparatus for Measuring Current as in Sensing a Memory Cell
Variable Resistance Memory and Method for Sensing Same
Stacked 1T-Nmtj Mram Structure
Synthetic-Ferrimagnet Sense-Layer for High Density Mram Applications
Integrated Resistor, Phase-Change Memory Element Including This Resistor, and Process for the Fabrication Thereof
Method of Forming a Non-Volatile Resistance Variable Device
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Method of Refreshing a Pcram Memory Device
Sublithographic Contact Structure, Phase Change Memory Cell with Optimized Heater Shape, and Manufacturing Method Thereof
Magnetic Memory Array Architecture
Process for Manufacturing an Array of Cells Including Selection Bipolar Junction Transistors
Methods of Increasing Write Selectivity in an Mram
Integrated Circuits Using Optical Waveguide Interconnects Formed Through a Semiconductor Wafer and Methods for Forming Same
Method of Operating a Microcavity Discharge Device
System and Method for Sensing Data Stored in a Resistive Memory Element Using One Bit of a Digital Count
Software Refreshed Memory Device and Method
Methods of Forming a Semiconductor Memory Device
Microcavity Discharge Device
Magnetoresistive Memory Device Assemblies
Stacked 1T-Nmemory Cell Structure
Integrated Circuit Structure Formed by Damascene Process
Fabrication of Single Polarity Programmable Resistance Structure
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Pcram Memory Cell and Method of Making Same
Thin Film Diode Integrated with Chalcogenide Memory Cell
Methods of Fabricating an Mram Device Using Chemical Mechanical Polishing
Programmable Conductor Memory Cell Structure and Method Therefor
Resistive Memory Element Sensing Using Averaging
Array of Cells Including a Selection Bipolar Transistor and Fabrication Method Thereof
Systems and Methods for Speech Recognition and Separate Dialect Identification
Antiferromagnetically Stabilized Pseudo Spin Valve for Memory Applications
Mram Devices with Fine Tuned Offset
Electronic Systems Using Optical Waveguide Interconnects Formed Throught a Semiconductor Wafer and Methods for Forming Same
Antiferromagnetically Stabilized Pseudo Spin Valve for Memory Applications
Tilted Array Geometry for Improved Mram Switching
Memory Device, Programmable Resistance Memory Cell and Memory Array
Multiple Data State Memory Cell
Fast Reading, Low Consumption Memory Device and Reading Method Thereof
Random Access Memory Device Utilizing a Vertically Oriented Select Transistor
Memory Element and Its Method of Formation
Front-End Processing of Nickel Plated Bond Pads
Small Area Contact Region, High Efficiency Phase Change Memory Cell and Fabrication Method Thereof
Method of Making a Memory Cell
Apparatus and Methods for Storing Data in a Magnetic Random Access Memory (Mram)
Write Current Shunting Compensation
Electronic Equipment Point-of-Sale Activation to Avoid Theft
Gas Assisted Method for Applying Resist Stripper and Gas-Resist Stripper Combinations
Magnetoresistive Memory Device Assemblies, and Methods of Forming Magnetoresistive Memory Device Assemblies
Mram Device for Preventing Electrical Shorts During Fabrication
Software Refreshed Memory Device and Method
Erasure Pointer Error Correction
STACKED 1T-nMTJ MRAM STRUCTURE
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Phase Change Memory Cell and Method of Formation
Diode/Superionic Conductor/Polymer Memory Structure
Stacked 1T-Nmemory Cell Structure
Resistance Variable Memory with Temperature Tolerant Materials
Method of Operating a Complementary Bit Resistance Memory Sensor and Method of Operation
Text Based Markup Language Resource Interface
Patent:
7,366,985 →
Application:
09/349,735 →
Sublithographic Contact Structure, Phase Change Memory Cell with Optimized Heater Shape, and Manufacturing Method Thereof
Methods for Resistive Memory Element Sensing Using Averaging
Systems and Methods for Speech Recognition and Separate Dialect Identification
Apparatus and Methods for Storing Data in a Magnetic Random Access Memory (Mram)
Method of Refreshing a Pcram Memory Device
Patent:
7,385,868 →
Application:
11/128,177 →
Resistance Variable Memory with Temperature Tolerant Materials
Manufacturing Method of a Contact Structure and Phase Change Memory Cell with Elimination of Double Contacts
Non-Systematic Coded Error Correction
Array of Cells Including a Selection Bipolar Transistor and Fabrication Method Thereof
Reticles and Methods of Forming Reticles
Front-End Processing of Nickel Plated Bond Pads
Noise Resistant Small Signal Sensing Circuit for a Memory Device
Resistance Variable Memory Device with Nanoparticle Electrode and Method of Fabrication
Reticles
Multiple Data State Memory Cell
Text Based Markup Language Resource Interface
Phase-Change Random Access Memory Employing Read Before Write for Resistance Stabilization
Text Based Markup Language Resource Interface
Programmable Conductor Memory Cell Structure and Method Therefor
Electronic Systems Using Optical Waveguide Interconnects Formed Through a Semiconductor Wafer
Process for Manufacturing an Array of Cells Including Selection Bipolar Junction Transistors
Software Refreshed Memory Device and Method
Resistive Memory Element Sensing Using Averaging
Resistance Variable Memory with Temperature Tolerant Materials
Memory Architecture and Cell Design Employing Two Access Transistors
Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same
Silver-Selenide/Chalcogenide Glass Stack for Resistance Variable Memory
Phase Change Memory Cell and Method of Formation
Resistance Variable Memory with Temperature Tolerant Materials
Resistive Memory Architectures with Multiple Memory Cells Per Access Device
Resistance Variable Memory Cells
Resistance Variable Memory Element and Its Method of Formation
Phase Change Memory
Random Access Memory Employing Read Before Write for Resistance Stabilization
Hybrid Mram Array Structure and Operation
Systems and Devices Including Local Data Lines and Methods of Using, Making, and Operating the Same
Resistive Memory Cell Fabrication Methods and Devices
Phase Change Memory Structures and Methods
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices
Software Refreshed Memory Device and Method
Memory Devices and Methods of Forming the Same
Erasure Pointer Error Correction
Random Access Memory Device Utilizing a Vertically Oriented Select Transistor
Method of Forming Memory Cell Using Gas Cluster Ion Beams
Front-End Processing of Nickel Plated Bond Pads
Memory Cell
Variable Resistance Memory with Lattice Array Using Enclosing Transistors
Digital Filters with Memory
Phase Change Material and Methods of Forming the Phase Change Material
Subtraction Circuits and Digital-to-Analog Converters for Semiconductor Devices
Phase Change Memory Cell with Constriction Structure
Memory Devices and Formation Methods
Memory Devices Having Electrodes Comprising Nanowires, Systems Including Same and Methods of Forming Same
Methods for Determining Resistance of Phase Change Memory Elements
Nand-Structured Series Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Spin Current Generator for Stt-Mram or Other Spintronics Applications
State Machine Sensing of Memory Cells
Methods of Forming Memory Cells, and Methods of Forming Programmed Memory Cells
Methods of Forming a Phase Change Material
Use of Emerging Non-Volatile Memory Elements with Flash Memory
Resistance Variable Memory with Temperature Tolerant Materials
Phase Change Current Density Control Structure
Spin Torque Transfer Cell Structure Utilizing Field-Induced Antiferromagnetic or Ferromagnetic Coupling
Writing to Non-Volatile Memory During a Volatile Memory Refresh Cycle
Patent:
7,944,764 →
Application:
12/347,900 →
Software Refreshed Memory Device and Method
Recessed Gate Silicon-on-Insulator Floating Body Device with Self-Aligned Lateral Isolation
Temperature Compensation in Memory Devices and Systems
Reduced Signal Interface Memory Device, System, and Method
Multiple Memory Cells with Rectifying Device
Non-Volatile Memory with Resistive Access Component
Methods for Determining Resistance of Phase Change Memory Elements
Stacked Memory Cell Structure and Method of Forming Such a Structure
Phase Change Memory Cell and Manufacturing Method Thereof Using Minitrenches
Semiconductor Processing
Bottom Electrode Geometry for Phase Change Memory
Memory Sensing Devices, Methods, and Systems
Method of Forming a Bond Pad
Resistive Memory and Methods of Processing Resistive Memory
Encapsulated Phase Change Cell Structures and Methods
Providing a Ready-Busy Signal from a Non-Volatile Memory Device to a Memory Controller
Integrated Circuit Having Voltage Generation Circuitry for Memory Cell Array, and Method of Operating and /or Controlling Same
Resistive Memory Architectures with Multiple Memory Cells Per Access Device
Phase Change Memory Structures
Silver-Selenide/Chalcogenide Glass Stack for Resistance Variable Memory
Memory Cells
Resistance Variable Memory Device with Nanoparticle Electrode and Method of Fabrication
Memory Cell
Phase Change Memory Cell Structures and Methods
Unidirectional Spin Torque Transfer Magnetic Memory Cell Structure
Multilevel Phase Change Memory Operation
Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods
Methods of Data Handling
Memory Devices and Methods of Forming the Same
Phase Change Memory Devices
Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
Cross-Point Memory Devices, Electronic Systems Including Cross-Point Memory Devices and Methods of Accessing a Plurality of Memory Cells in a Cross-Point Memory Array
Methods of Forming Germanium-Antimony-Tellurium Materials and a Method of Forming a Semiconductor Device Structure Including the Same
Hybrid Mram Array Structure and Operation
Controlling the Circuitry and Memory Array Relative Height in a Phase Change Memory Feol Process Flow
Memory Cells, Memory Cell Programming Methods, Memory Cell Reading Methods, Memory Cell Operating Methods, and Memory Devices
Integrated Memory Arrays
Methods of Forming Metal-Containing Structures, and Methods of Forming Germanium-Containing Structures
Memory Devices and Formation Methods
Techniques for Reducing Disturbance in a Semiconductor Device
Stored Multi-Bit Data Characterized by Multiple-Dimensional Memory States
Methods of Forming Memory Cells and Methods of Forming Programmed Memory Cells
Resistive Memory Cell Fabrication Methods and Devices
Memory Cell Having Gen-Containing Material and Variable Resistance Material Embedded Within Insulating Material
Subtraction Circuits and Digital-to-Analog Converters for Semiconductor Devices
Refreshing Data of Memory Cells with Electrically Floating Body Transistors
Methods of Self-Aligned Growth of Chalcogenide Memory Access Device
Methods of Depositing Antimony-Comprising Phase Change Material Onto a Substrate and Methods of Forming Phase Change Memory Circuitry
Vertical Transistor Phase Change Memory
Memory Devices with Enhanced Isolation of Memory Cells, Systems Including Same and Methods of Forming Same
3-D and 3-D Schottky Diode for Cross-Point, Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Solid State Lights with Thermosiphon Liquid Cooling Structures and Methods
Spin Torque Transfer Cell Structure Utilizing Field-Induced Antiferromagnetic or Ferromagnetic Coupling
State Machine Sensing of Memory Cells
Chalcogenide Containing Semiconductors with Chalcogenide Gradient
Spin Current Generator for Stt-Mram or Other Spintronics Applications
Memory Architecture and Cell Design Employing Two Access Transistors
Phase Change Memory
Transient Heat Assisted Sttram Cell for Lower Programming Current
Resistive Ram Devices and Methods
Phase Change Memory Structures and Methods
Memory Cells and Methods of Forming Memory Cells
Phase Change Current Density Control Structure
Semiconductor Device with Electrically Floating Body
Resistive Memory and Methods of Processing Resistive Memory
Methods Utilizing Microwave Radiation During Formation of Semiconductor Constructions
Phase Change Memory Structures and Methods
Methods of Forming Memory Arrays
Thyristor Based Memory Cells, Devices and Systems Including the Same and Methods for Forming the Same
Memory Arrays
Providing a Ready-Busy Signal from a Non-Volatile Memory Device to a Memory Controller
Phase Change Memory Cell Structures and Methods
Techniques for Providing a Direct Injection Semiconductor Memory Device
Phase Change Material, a Phase Change Random Access Memory Device Including the Phase Change Material, and a Semiconductor Structure Including the Phase Change Material
Write Operation for Phase Change Memory
Methods of Forming Programmed Memory Cells
Methods of Forming Metal-Containing Structures, and Methods of Forming Germanium-Containing Structures
Resistive Memory and Methods of Processing Resistive Memory
Vertical Spacer Electrodes for Variable-Resistance Material Memories and Vertical Spacer Variable-Resistance Material Memory Cells
Use of Emerging Non-Volatile Memory Elements with Flash Memory
Memory Cell
Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Methods of Forming Electrical Components and Memory Cells
Unidirectional Spin Torque Transfer Magnetic Memory Cell Structure
Word-Line Driver Including Pull-Up Resistor and Pull-Down Transistor
Upwardly Tapering Heaters for Phase Change Memories
Methods for Operating Memory Elements
Horizontally Oriented and Vertically Stacked Memory Cells
Non-Volatile Memory with Resistive Access Component
Reduced Signal Interface Memory Device, System, and Method
Variable Resistance Memory with Lattice Array Using Enclosing Transistors
Methods of Self-Aligned Growth of Chalcogenide Memory Access Device
Multilevel Phase Change Memory Operation
Systems and Devices Including Local Data Lines and Methods of Using, Making, and Operating the Same
Semiconductor Structure and Semiconductor Device Including a Diode Structure and Methods of Forming Same
Random Access Memory Device Utilizing a Vertically Oriented Select Transistor
Resistive Memory Element Sensing Using Averaging
Variable Resistance Memory Programming
Refreshing Data of Memory Cells with Electrically Floating Body Transistors
Hybrid Mram Array Structure and Operation
Semiconductor Processing
Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions
Memory Devices and Formation Methods
Reliable Set Operation for Phase-Change Memory Cell
Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device
Spin Current Generator for Stt-Mram or Other Spintronics Applications
Use of Emerging Non-Volatile Memory Elements with Flash Memory
Silver-Selenide/Chalcogenide Glass Stack for Resistance Variable Memory and Manufacturing Method Thereof
Programming an Array of Resistance Random Access Memory Cells Using Unipolar Pulses
Methods of Forming a Phase Change Material
Methods of Depositing Antimony-Comprising Phase Change Material Onto a Substrate and Methods of Forming Phase Change Memory Circuitry
Methods of Forming Memory Cells.
Bipolar Switching Memory Cell with Built-in "on" State Rectifying Current-Voltage Characteristics
Semiconductor Constructions Comprising Vertically-Stacked Memory Units That Include Diodes Utilizing at Least Two Different Dielectric Materials, and Electronic Systems
Memory Arrays
Semiconductor Device with Electrically Floating Body
Phase Change Memory Structures and Methods
Memory Quality Monitor Based Compensation Method and Apparatus
Semiconductor Cells, Arrays, Devices and Systems Having a Buried Conductive Line and Methods for Forming the Same
Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
Transient Heat Assisted Sttram Cell for Lower Programming Current
Semiconductor Cells, Arrays, Devices and Systems Having a Buried Conductive Line and Methods for Forming the Same
Techniques for Providing a Direct Injection Semiconductor Memory Device
Semiconductor Device with Floating Gate and Electrically Floating Body
Methods of Data Handling
Methods of Forming Memory Arrays
Systems and Methods for Caching Data with a Nonvolatile Memory Cache
Manufacturing Process for Zero-Capacitor Random Access Memory Circuits
Devices and Methods to Program a Memory Cell
Advanced Converters for Memory Cell Sensing and Methods
Thyristor-Based Memory Cells, Devices and Systems Including the Same and Methods for Forming the Same
Techniques for Providing a Semiconductor Memory Device
Methods of Forming Memory Structures and Methods of Forming Memory Arrays
Integrated Circuit Having Memory Cell Array Including Barriers, and Method of Manufacturing Same
Techniques for Providing a Semiconductor Memory Device
Memory Arrays and Methods of Forming Memory Cells
Phase Change Current Density Control Structure
Techniques for Providing a Semiconductor Memory Device
Stt-Mram Cell Structures
Spin-Torque Transfer Memory Cell Structures with Symmetric Switching and Single Direction Programming
Temperature Compensation in Memory Devices and Systems
Providing a Ready-Busy Signal from a Non-Volatile Memory Device to a Memory Controller
Methods for Sensing Memory Elements in Semiconductor Devices
At Least Semi-Autonomous Modules in a Memory System and Methods
Memory Cell Structures
Method, System, and Device for Phase Change Memory Switch Wall Cell with Approximately Horizontal Electrode Contact
Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Reliable Set Operation for Phase-Change Memory Cell
Memory Cell Having Heater Material and Variable Resistance Material Embedded Within Insulating Material
Advanced Bitwise Operations and Apparatus in a Multi-Level System with Nonvolatile Memory
Resistive Memory and Methods of Processing Resistive Memory
Memory Devices with Enhanced Isolation of Memory Cells, Systems Including Same and Methods of Forming Same
Bitwise Operations and Apparatus in a Multi-Level System
Techniques for Refreshing a Semiconductor Memory Device
Integrated Circuitry and Switches
Reduced Signal Interface Memory Device, System, and Method
Non-Systematic Coded Error Correction
Memory Cells
Integrated Circuit Having Voltage Generation Circuitry for Memory Cell Array, and Method of Operating and/or Controlling Same
Memory Cell
Spin Torque Transfer Cell Structure Utilizing Field-Induced Antiferromagnetic or Ferromagnetic Coupling
Integrated Memory Arrays, and Methods of Forming Memory Arrays
Variable-Resistance Material Memories and Methods
Method for Making a Bottom Electrode Geometry for Phase Change Memory
Semiconductor Constructions and Memory Arrays
Methods of Self-Aligned Growth of Chalcogenide Memory Access Device
Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry
Encapsulated Phase Change Cell Structures and Methods
Techniques for Reducing Disturbance in a Semiconductor Memory Device
Methods of Forming a Phase Change Material
Permutational Memory Cells
Resistive Memory Element Sensing Using Averaging
Use of Emerging Non-Volatile Memory Elements with Flash Memory
Memory Cells and Methods of Forming Memory Cells
Method of Manufacturing Upwardly Tapering Heaters for Phase Change Memories
Memory Constructions
Memory Devices and Formation Methods
Memory Architecture and Cell Design Employing Two Access Transistors
Resistive Ram Devices and Methods
Methods of Forming a Metal Chalcogenide Material
Methods and Systems for Operating Memory Elements
Semiconductor Constructions, Memory Arrays, Methods of Forming Semiconductor Constructions and Methods of Forming Memory Arrays
Methods of Forming Germanium-Antimony-Tellurium Materials and Methods of Forming a Semiconductor Device Structure Including the Same
Techniques for Reducing Disturbance in a Semiconductor Memory Device
Memory Sensing Using Temperature Compensated Initial Currents
Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry
Bipolar Junction Transistors and Memory Arrays
Variable Resistance Memory Programming
Devices and Methods to Program a Memory Cell
Select Devices for Memory Cell Applications
Sub-block Accessible Nonvolatile Memory Cache
Advanced Converters for Memory Cell Sensing and Methods
Correcting Data in a Memory
Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry
Resistive Memory and Methods of Processing Resistive Memory
Recessed Gate Silicon-on-Insulator Floating Body Device with Self-Aligned Lateral Isolation
Methods of Forming Electrical Components and Memory Cells
Semiconductor Device with Floating Gate and Electrically Floating Body
Emissive Device with Chiplets
Refreshing Data of Memory Cells with Electrically Floating Body Transistors
Apparatus and Methods to Provide Power Management for Memory Devices
Phase Change Memory Cell with Constriction Structure
Semiconductor Cells, Arrays, Devices and Systems Having a Buried Conductive Line and Methods for Forming the Same
Vertical Transistor Phase Change Memory
Techniques for Providing a Semiconductor Memory Device
Memory Cells and Methods of Forming Memory Cells
Memory Arrays
Non-Volatile Memory with Resistive Access Component
Resistive Memory Cell Fabrication Methods and Devices
Programming an Array of Resistance Random Access Memory Cells Using Unipolar Pulses
Phase Change Current Density Control Structure
Methods of Self-Aligned Growth of Chalcogenide Memory Access Device
Methods for Sensing Memory Elements in Semiconductor Devices
Techniques for Providing a Direct Injection Semiconductor Memory Device
Memory Quality Monitor Based Compensation Method and Apparatus
Semiconductor Cells, Arrays, Devices and Systems Having a Buried Conductive Line and Methods for Forming the Same
Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods
Memory Cells, Memory Cell Constructions, and Memory Cell Programming Methods
Memory Constructions
Memory Cell and Memory Cell Array Having an Electrically Floating Body Transistor, and Methods of Operating Same
Resistance Variable Memory Device with Nanoparticle Electrode and Method of Fabrication
Diode for Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Memory Devices Having Electrodes Comprising Nanowires, Systems Including Same and Methods of Forming Same
Spin Current Generator for Stt-Mram or Other Spintronics Applications
Bipolar Junction Transistors, Memory Arrays, and Methods of Forming Bipolar Junction Transistors and Memory Arrays
Method of Forming a Memory Device
Unidirectional Spin Torque Transfer Magnetic Memory Cell Structure
Apparatus and Methods for Forming a Memory Cell Using Charge Monitoring
Stt-Mram Cell Structures
Memory Cells with Rectifying Device
Techniques for Providing a Direct Injection Semiconductor Memory Device
Variable-Resistance Material Memories and Methods
Apparatuses and Methods for Efficient Write in a Cross-Point Array
Stabilization of Resistive Memory
Memory Cells Having a Plurality of Resistance Variable Materials
Memory Arrays and Methods of Forming Memory Cells
Resistive Memory Architectures with Multiple Memory Cells Per Access Device
Method, System, and Device for Phase Change Memory Switch Wall Cell with Approximately Horizontal Electrode Contact
Thyristor-Based Memory Cells, Devices and Systems Including the Same and Methods for Forming the Same
Methods of Forming a Memory Device
Memory Constructions
Selectively Conducting Devices, Diode Constructions, Constructions, and Diode Forming Methods
Permutational Memory Cells
Phase Change Material Gradient Structures and Methods
Techniques for Providing a Semiconductor Memory Device
Horizontally Oriented and Vertically Stacked Memory Cells
Vertical Transistor Phase Change Memory
Selective Self-Reference Read
Cross-Point Memory Devices, Electronic Systems Including Cross-Point Memory Devices and Methods of Accessing a Plurality of Memory Cells in a Cross-Point Memory Array
Metallization Scheme for Integrated Circuit
Apparatus and Methods to Provide Power Management for Memory Devices
Methods of Forming a Metal Telluride Material, Related Methods of Forming a Semiconductor Device Structure, and Related Semiconductor Device Structures
Solid State Lights with Thermosiphon Liquid Cooling Structures and Methods
Cross-Point Memory Compensation
Memory Structures, Memory Arrays, Methods of Forming Memory Structures and Methods of Forming Memory Arrays
Multilevel Phase Change Memory Operation
Encapsulated Phase Change Cell Structures and Methods
Methods of Forming Germanium-Antimony-Tellurium Materials and Chalcogenide Materials
Digital Filters with Memory
Method, System, and Device for Storage Cell, Such as for Memory
Memory Cell Structures
Resistive Memory Element Sensing Using Averaging
Memory Quality Monitor Based Compensation Method and Apparatus
Devices and Methods to Program a Memory Cell
Memory Cells and Methods of Forming Memory Cells
Methods of Operating a Phase Change Memory Cell
Diode for Variable-Resistance Material Memories, Processes of Forming Same, and Methods of Using Same
Resistive Memory and Methods of Processing Resistive Memory
Techniques for Refreshing a Semiconductor Memory Device
Resistive Ram Devices and Methods
Phase Change Current Density Control Structure
Selectively Conducting Devices, Diode Constructions, Methods of Forming Diodes and Methods of Current Modulation
Reliable Set Operation for Phase-Change Memory Cell
Resistive Memory Cell Fabrication Methods and Devices
Method of Forming a Memory Device
Memory Devices and Formation Methods
Variable Resistance Memory with Lattice Array Using Enclosing Transistors
Bipolar Switching Memory Cell with Built-in "on" State Rectifying Current-Voltage Characteristics
Stabilization of Resistive Memory
Pixel Interpolation Apparatus, Imaging Apparatus, Pixel Interpolation Processing Method, Integrated Circuit, and Non-Transitory Computer Readable Storage Medium
Non-Systematic Coded Error Correction
Apparatus and Methods for Forming a Memory Cell Using Charge Monitoring
Diode/superionic conductor/polymer memory structure
Polymer Composite Actuator and Generator Driven by Water Gradients
Semiconductor Device with Floating Gate and Electrically Floating Body
Integrated Circuit Having Voltage Generation Circuitry for Memory Cell Array, and Method of Operating and/or Controlling Same
Techniques for Providing a Semiconductor Memory Device
Methods of Depositing Phase Change Materials and Methods of Forming Memory
Manufacturing Process for Zero-Capacitor Random Access Memory Circuits
Phase Change Memory Cell with Constriction Structure
Related Assignments
(18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Oct 4, 2012
From: STMICROELECTRONICS N.V.
To: NUMONYX B.V.
Reel/Frame 029076/0493 →
Assignment of Assignor's Interest
Nov 21, 2012
From: NUMONYX B.V.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 029406/0001 →
Assignment of Assignor's Interest
Aug 26, 2013
From: BEZ, ROBERTO; PELLIZZER, FABIO; TOSI, MARINA; ZONCA, ROMINA
To: STMICROELECTRONICS S.R.L.; OVONYX INC.
Reel/Frame 031230/0543 →
Assignment of Assignor's Interest
Oct 31, 2013
From: STMICROELECTRONICS, S.R.L. (FORMERLY KNOWN AS SGS-THOMSON MICROELECTRONICS, S.R.L.)
To: STMICROELECTRONICS NV
Reel/Frame 031550/0657 →
Corrective Recordation Coversheet and Appendix to Remove Erroneously Listed Application Serial No. 11/495876 on Reel 029406 Frame 001
Dec 11, 2013
From: NUMONYX B.V.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 032069/0337 →
Assignment of Assignor's Interest
Nov 21, 2014
From: SCHILLER, ANDREW
To: LOCATION INC. GROUP CORPORATION
Reel/Frame 034225/0586 →
Assignment of Assignor's Interest
Dec 8, 2015
From: OVONYX, INC.
To: CARLOW INNOVATIONS LLC
Reel/Frame 037244/0954 →
Change of Name
Jul 18, 2016
From: CARLOW INNOVATIONS, LLC
To: OVONYX MEMORY TECHNOLOGY, LLC
Reel/Frame 039379/0077 →
Assignment of Assignor's Interest
Oct 18, 2016
From: FAZAN, PIERRE
To: INNOVATIVE SILICON ISI SA
Reel/Frame 040396/0869 →
Assignment of Assignor's Interest
Oct 18, 2016
From: INNOVATIVE SILICON ISI S.A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040396/0745 →
Assignment of Assignor's Interest
Dec 2, 2016
From: INNOVATIVE SILICON ISI SA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 040818/0120 →
Assignment of Assignor's Interest
Dec 2, 2016
From: KIM, JOHN
To: INNOVATIVE SILICON ISI SA
Reel/Frame 040496/0756 →
Assignment of Assignor's Interest
Jan 30, 2017
From: INNOVATIVE SILICON ISI SA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 041555/0931 →
Assignment of Assignor's Interest
Jan 30, 2017
From: KWON, JUNGTAE; KIM, DAVID; BHARDWAJ, SUNIL
To: INNOVATIVE SILICON ISI SA
Reel/Frame 041122/0198 →
Assignment of Assignor's Interest
Sep 11, 2017
From: INNOVATIVE SILICON ISI SA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043811/0329 →
Assignment of Assignor's Interest
Sep 11, 2017
From: OKHONIN, SERGUEI; NAGOGA, MIKHAIL
To: INNOVATIVE SILICON ISI SA
Reel/Frame 043542/0893 →
Assignment of Assignor's Interest
Oct 2, 2017
From: INNOVATIVE SILICON ISI SA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044097/0101 →
Corrective Assignment to Correct the Receiving Party Address Previously Recorded at Reel: 044097 Frame: 0101. Assignor(S) Hereby Confirms the Assignment.
Nov 13, 2017
From: INNOVATIVE SILICON ISI SA
To: MICRON TECHNOLOGY, INC.
Reel/Frame 044429/0178 →