Methods of forming germanium-antimony-tellurium materials and chalcogenide materials

1. A method of forming a germanium-antimony-tellurium material, comprising:

exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound;

exposing the substrate to a first antimony-containing compound and a second, different antimony-containing compound; and

exposing the substrate to a first tellurium-containing compound and a second, different tellurium-containing compound.

2. The method of claim 1 , further comprising repeating the exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound, the exposing the substrate to a first antimony-containing compound and a second, different antimony-containing compound, and the exposing the substrate to a first tellurium-containing compound and a second, different tellurium-containing compound.

3. The method of claim 1 , wherein exposing a substrate to a first germanium-containing compound comprises exposing the substrate to a germanium-containing compound selected from the group consisting of Ge(II)(trimethylsilyl) 2 , Ge(IV)(trimethylsilyl) 4 , and GeH(trimethylsilyl) 3 .

4. The method of claim 1 , wherein exposing a substrate to a second germanium-containing compound comprises exposing the substrate to a germanium-containing compound selected from the group consisting of Ge(II)F 2 , Ge(IV)F 4 , Ge(II)Cl 2 , Ge(IV)Cl 4 , Ge(II)Br 2 , Ge(IV)Br 4 , Ge(II)I 2 , Ge(IV)I 4 , Ge(IV)(OMe) 4 , and Ge(IV)(OEt) 4 .

5. The method of claim 1 , wherein exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound comprises exposing the substrate to an ALD cycle consisting essentially of the first germanium-containing compound, the second germanium-containing compound, a carrier gas, and a purge gas.

6. The method of claim 1 , wherein exposing the substrate to a first antimony-containing compound comprises exposing the substrate to Sb(III)(trimethylsilyl) 3 .

7. The method of claim 1 , wherein exposing the substrate to a second antimony-containing compound comprises exposing the substrate to an antimony-containing compound selected from the group consisting of Sb(V)F 5 , Sb(III)F 3 , Sb(III)Cl 3 , Sb(V)Cl 5 , Sb(III)I 3 , Sb(III)Br 3 , Sb(III)(OMe) 3 , and Sb(III)(OEt) 3 .

8. The method of claim 1 , wherein exposing the substrate to a first antimony-containing compound and a second, different antimony-containing compound comprises exposing the substrate to an ALD cycle consisting essentially of the first antimony-containing compound, the second antimony-containing compound, a carrier gas, and a purge gas.

9. The method of claim 1 , wherein exposing the substrate to a first tellurium-containing compound comprises exposing the substrate to a tellurium-containing compound selected from the group consisting of Te(II)(trimethylsilyl) 2 and Te(IV)(trimethylsilyl) 4 .

10. The method of claim 1 , wherein exposing the substrate to a second tellurium-containing compound comprises exposing the substrate to a tellurium-containing compound selected from the group consisting of TeCl 4 , TeBr 4 , Te(IV)(OMe) 4 , and Te(IV)(OEt) 4 .

11. The method of claim 1 , wherein exposing the substrate to a first tellurium-containing compound and a second, different tellurium-containing compound comprises exposing the substrate to an ALD cycle consisting essentially of the first tellurium-containing compound, the second tellurium-containing compound, a carrier gas, and a purge gas.

12. The method of claim 1 , further comprising conformally forming the germanium-antimony-tellurium material in openings in the substrate.

13. The method of claim 12 , wherein conformally forming the germanium-antimony-tellurium material in openings in the substrate comprises forming the germanium-antimony-tellurium material in openings having a width of less than approximately 100 nm.

14. The method of claim 1 , wherein the method comprises forming a homogeneous conformal germanium-antimony-tellurium material.

15. The method of claim 1 , further comprising forming the germanium-antimony-tellurium material to a thickness of from approximately 400 Å to approximately 2000 Å.

16. The method of claim 1 , further comprising forming a germanium-antimony-tellurium material off the Ge—Te and Sb 2 Te 3 tie lines.

17. A method of forming a germanium-antimony-tellurium material, comprising:

exposing a substrate to a first germanium precursor and a second, different germanium precursor;

exposing the substrate to a first antimony precursor and a second, different antimony precursor;

exposing the substrate to a first tellurium precursor and a second, different tellurium precursor; and

repeating the exposing a substrate to a first germanium precursor and a second, different germanium precursor, the exposing the substrate to a first antimony precursor and a second, different antimony precursor, and the exposing the substrate to a first tellurium precursor and a second, different tellurium precursor to form a germanium-antimony-tellurium material.

18. A method of forming a chalcogenide material, comprising:

exposing a substrate to a first precursor comprising a reactive precursor of a first metal and a co-reactive precursor of the first metal, the reactive precursor and the co-reactive precursor each having at least one ligand coordinated to an atom of the first metal, wherein the at least one ligand of the co-reactive precursor is different from the at least one ligand of the reactive precursor;

exposing the substrate to a reactive antimony precursor and a co-reactive antimony precursor, the reactive antimony precursor and the co-reactive antimony precursor each having at least one ligand coordinated to an antimony atom, wherein the at least one ligand of the co-reactive antimony precursor is different from the at least one ligand of the reactive antimony precursor; and

exposing the substrate to a reactive tellurium precursor and a co-reactive tellurium precursor, the reactive tellurium precursor and the co-reactive tellurium precursor each having at least one ligand coordinated to a tellurium atom, wherein the at least one ligand of the co-reactive tellurium precursor is different from the at least one ligand of the reactive tellurium precursor.

19. The method of claim 18 , further comprising repeating the exposing a substrate to a reactive precursor of a first metal and a co-reactive precursor of the first metal, the exposing the substrate to a reactive antimony precursor and a co-reactive antimony precursor, and the exposing the substrate to a reactive tellurium precursor and a co-reactive tellurium precursor to form a material comprising the first metal, antimony, and tellurium.

20. The method of claim 18 , wherein exposing a substrate to a first precursor comprising a reactive precursor of a first metal and a co-reactive precursor of the first metal comprises exposing the substrate to a reactive precursor of indium and a co-reactive precursor of indium, the reactive precursor and the co-reactive precursor each having at least one ligand coordinated to an indium atom, wherein the at least one ligand of the co-reactive precursor is different from the at least one ligand of the reactive precursor.