Memory devices having electrodes comprising nanowires
View Patent ↗Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
1. A memory device, comprising:
a first electrode comprising:
a conductive pad; and
a generally conical catalytic structure having a base and a tip, the base of the generally conical catalytic structure coupled to the conductive pad; and
only a single nanowire extending from the tip of the generally conical catalytic structure, wherein an effective cross-sectional area of the tip is sized to facilitate formation of only the single nanowire thereon.
2. The memory device of claim 1 , wherein the conductive pad comprises at least a portion of an elongated laterally extending conductive trace.
3. The memory device of claim 1 , further comprising:
a substrate disposed next to the conductive pad; and
a volume of variable resistance material coupled to an end of the single nanowire opposite the generally conical catalytic structure.
4. The memory device of claim 3 , further comprising a second electrode disposed on a side of the volume of variable resistance material opposite the single nanowire.
5. The memory device of claim 1 , wherein the single nanowire comprises a nanotube.
6. The memory device of claim 1 , wherein the single nanowire comprises a substantially solid nanowire.
7. The memory device of claim 1 , wherein the single nanowire is coupled to the conductive pad through the generally conical catalytic structure.
8. The memory device of claim 1 , wherein the first electrode is coupled to a conductive line via electrical contacts.
9. The memory device of claim 1 , wherein the generally conical catalytic structure consists of a catalyst material.