Spin current generator for STT-MRAM or other spintronics applications
View Patent ↗Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
1. A device comprising:
a spin-polarizing layer capable of polarizing a programming current such that the programming current output from the spin-polarizing layer is polarized in a first direction and capable of outputting an unpolarized current; and
a non-magnetic layer disposed directly on a first surface of the spin-polarizing layer.
2. The device, as set forth in claim 1 , comprising an antiferromagnetic layer disposed directly on a second surface of the spin-polarizing layer.
3. The device, as set forth in claim 1 , comprising an insulative material formed adjacent to the spin-polarizing layer and the nonmagnetic layer.
4. The device, as set forth in claim 1 , comprising a heater material formed adjacent to the spin-polarizing layer and the nonmagnetic layer.
5. The device, as set forth in claim 1 , comprising a piezoelectric stress material formed adjacent to the spin-polarizing layer and the nonmagnetic layer.
6. The device, as set forth in claim 1 , wherein the spin-polarizing layer comprises a ferromagnetic material.
7. The device, as set forth in claim 1 , comprising a gate configured to selectively apply a voltage to the spin-polarizing layer.
8. A device comprising:
a first spin-polarizing layer configured to polarize a programming current such that the programming current is polarized in a first direction;
a non-magnetic layer disposed directly on a first surface of the spin-polarizing layer;
a second spin-polarizing layer configured to polarize the programming current such that the programming current is polarized in a second direction, opposite the first direction; and
a second non-magnetic layer disposed directly on a first surface of the second spin-polarizing layer.
9. The device, as set forth in claim 8 , comprising a second gate configured to selectively apply the voltage to the second spin-polarizing layer.
10. The device, as set forth in claim 8 , wherein the device is configured to generate a spin current having a first polarity, and further configured to generate a spin current having a second polarity.
11. A device comprising:
an array of memory cells; and
a structure configured to generate a unidirectional spin current to the array of memory cells.
12. The device, as set forth in claim 11 , wherein each of the memory cells in the array comprises a spin torque transfer magnetic random access memory cell having a free layer and a pinned layer.
13. The device, as set forth in claim 11 , wherein the structure comprises:
a spin-polarizing layer configured to polarize a programming current such that the programming current is polarized in a first direction; and
a non-magnetic layer disposed directly on a first surface of the spin-polarizing layer.
14. The device, as set forth in claim 11 , wherein the structure is configured to program each of the memory cells in the array.
15. The device, as set forth in claim 11 , wherein the structure is configured to generate a unidirectional bi-spin polarized current.
16. The device, as set forth in claim 11 , wherein the structure is configured to generate a unidirectional single-spin polarized current.
17. The device, as set forth in claim 11 , wherein the structure is configured to generate a unidirectional non-spin polarized current.
18. The device, as set forth in claim 17 , comprising a spin-polarizing layer, and wherein the structure further comprises a material that decreases or eliminates a spin polarization of the spin-polarizing layer.
19. The system, as set forth in claim 18 , wherein the material comprises a heater material.
20. The system, as set forth in claim 19 , wherein the structure comprises a ferromagnetic layer, and wherein the heater material is configured to heat the ferromagnetic layer to reduce its spin-polarization efficiency.
21. The device, as set forth in claim 11 , comprising one or more gates configured to selectively transmit current through the structure.
22. The device, as set forth in claim 11 , wherein the array comprises a plurality of memory cells coupled in series to one another, and wherein the structure is configured to generate a spin current through each of the plurality of memory cells.
23. The device, as set forth in claim 22 , wherein the structure is configured to generate a spin current through each of the plurality of memory cells, simultaneously.