Memory cell having GeN-containing material and variable resistance material embedded within insulating material
View Patent ↗A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes.
1. A method of forming a phase-change material memory cell, the method comprising:
forming a first electrode;
forming a heater material comprising GeN on the first electrode;
forming an insulating material on the heater material;
forming a via in the insulating material to expose a surface of the heater material;
forming a phase-change material within the via; and
forming a second electrode on the phase change material and the heater material.
2. A variable resistance material memory cell, comprising:
a first electrode;
an insulating material on the first electrode;
a via in the insulating material exposing a surface of the first electrode;
a gas cluster ion beam formed material comprising GeN within the via, wherein the material comprising GeN is formed only on the exposed surface of the first electrode within the via;
a variable resistance material within the via; and
a second electrode on the variable resistance material and the material comprising GeN.
3. The memory cell of claim 2 , wherein the variable resistance material is a phase-change material.
4. The memory cell of claim 3 , wherein the phase-change material is one of Ge x Te y , GaSb, Sb x Te y , InSb, InSe, In x Sb y Te z , Sn x Sb y Te z , Ga x Se y Te z , InSbGe, AgInSbTe, GeSnSbTe, Te x Ge y Sb z S k , and GeSbSeTe.
5. The method of claim 4 , wherein the phase-change material has at least one of O, F, N, or C as impurity atoms.
6. The memory cell of claim 2 , wherein the variable resistance material is one of NiO, TiO, CuS, and SrTiO.
7. The memory cell of claim 2 , wherein the material comprising GeN is on the surface of the first electrode and the variable resistance material is on the material comprising GeN.
8. The memory cell of claim 2 , wherein the material comprising GeN comprises from about 0.5 to about 15 atomic percent nitrogen.
9. The memory cell of claim 2 , wherein the material comprising GeN comprises from about 5 to about 10 atomic percent nitrogen.
10. The memory cell of claim 2 , wherein the material comprising GeN comprises a nitrogen gradient level within the material comprising GeN.
11. A variable resistance material memory cell, comprising:
a first electrode;
an insulating material on the first electrode;
a via in the insulating material exposing a surface of the first electrode;
a gas cluster ion beam formed material comprising GeN within the via;
a phase-change material within the via; and
a second electrode on the phase-change material and the material comprising GeN,
wherein the phase-change material is one of Ge x Te y , GaSb, Sb x Te y , InSb, InSe, In x Sb y Te z , Sn x Sb y Te z , Ga x Se y Te z , InSbGe, AgInSbTe, GeSnSbTe, Te x Ge y Sb z S k , and GeSbSeTe, and
wherein the phase-change material has at least one of O, F, N, or C as impurity atoms.
12. A variable resistance material memory cell, comprising:
a first electrode;
an insulating material on the first electrode;
a via in the insulating material exposing a surface of the first electrode;
a gas cluster ion beam formed material comprising GeN within the via;
a variable resistance material within the via; and
a second electrode on the variable resistance material and the material comprising GeN,
wherein the variable resistance material is one of NiO, TiO, CuS, and SrTiO.