Phase change memory cell with constriction structure
View Patent ↗Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.
1. A method comprising:
forming a first electrode;
forming a second electrode;
forming a memory element directly contacting the first and second electrodes, wherein forming the memory element includes forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element; and
forming an electrically conductive intermediate material between the first and second portions of the memory element, wherein forming the memory element includes:
depositing a material over the first electrode; and
removing a part of the material to form at least part of the programmable portion.
2. The method of claim 1 , wherein the first portion of the memory element, the second portion of the memory element, and the programmable portion of the memory element include an identical material.
3. The method of claim 1 , wherein the first portion of the memory element, the second portion of the memory element, and the programmable portion of the memory element include a phase change material.
4. The method of claim 1 , wherein at least one of the first and second portions of the memory element includes a tapered part, and the programmable portion includes at least a part of the tapered part.
5. The method of claim 1 , wherein the intermediate material includes a first material, and the first and second portions of the memory element include a second material different from the first material.
6. The method of claim 1 , wherein the intermediate material includes one of TiN, ZrN, HfN, VN, NbN, TaN, TiC, ZrC, HfC, VC, NbC, TaC,TiB 2 , ZrB 2 , HfB 2 , VB 2 , NbB 2 , TaB 2 , Cr 3 C 2 , Mo 2 C, WC, CrB 2 , Mo 2 B5, W 2 B 5 , TiAlN, TiSiN, TiW, TaSiN, TiCN, SiC, B 4 C, WSix, MoSi 2 , NiCr, doped silicon, carbon, platinum, niobium, tungsten, or molybdenum.
7. A method comprising:
forming a first electrode;
forming a second electrode; and
forming a memory element directly contacting the first and second electrodes, wherein forming the memory element includes forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element, wherein forming the memory element includes:
forming an intermediate material between the first and second portions of the memory element;
depositing a second material over the first electrode;
forming a mask over the second material; and
using the mask to remove a part of the second material to obtain a remaining part of the second material, wherein the first portion includes at least a part of the remaining part of the second material, and the intermediate material includes at least a part of the mask after the part of the second material is removed.
8. A method comprising:
forming a first portion of a memory element over a first electrode, the first portion including a tapered part extending away from the first electrode;
forming a second portion of the memory element over a first electrode and contacting the tapered part;
forming a second electrode over the second portion of the memory element;
forming an intermediate material between the first and second portions of the memory element, wherein forming the second portion of the memor element includes depositing a material over the first electrode and
removing a part of the material to form at least part of a programmable portion of the memory element between the first and second portions of the memory element.
9. The method of claim 8 , wherein forming the first portion of the memory element includes:
depositing a first material over the first electrode; and
removing a part of the first material to obtain a remaining part of the material, the first portion of the memory element including at least a part of the remaining part of the first material.
10. The method of claim 8 , wherein the intermediate material has a resistance value lower than a resistance value of each of the first and second portions of the memory element.
11. A method comprising:
forming a first portion of a memory element over a first electrode;
forming a second portion of the memory element over the first portion, the second portion including a tapered part contacting the first portion;
forming a second electrode over the second portion of the memory element;
forming an intermediate material between the first and second portions of the memory element, wherein forming the second portion of the memory element includes depositing a material over the first electrode; and
removing a part of the material to form at least part of a programmable portion of the memory element between the first and second portions of the memory element.
12. The method of claim 11 , wherein the first portion of the memory element, the second portion of the memory element, and the programmable portion of the memory element include a compound of germanium, antimony, and tellurium.
13. The method of claim 11 , wherein forming the second electrode includes depositing a an additional material over the material over the first electrode, and removing a part of the additional material to obtain a remaining part of the additional material, and wherein the second electrode includes at least a part of the remaining part of the third material.