Semiconductor processing
View Patent ↗Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming a resistance variable material in the opening such that the resistance variable material does not form on the silicon layer.
1. A method of semiconductor processing, comprising:
forming a semiconductor material on a structure;
forming an opening through the semiconductor material and into the structure;
forming, in a selective area, a resistance variable material in the opening such that the resistance variable material is not in contact with the semiconductor material; and
forming a cap in situ on the resistance variable material and semiconductor material such that the cap is in contact with both the resistance variable material and semiconductor material.
2. The method of claim 1 , wherein the semiconductor material is a silicon layer.
3. The method of claim 1 , wherein the opening is a cylindrical container.
4. A method of semiconductor processing, comprising:
forming a silicon material on a structure;
removing a portion of the silicon material and a portion of the structure to form an opening therein;
forming, in a selective area, a phase change material in the opening such that no phase change material is formed on the silicon material, wherein the phase change material is formed in the opening after the silicon material is formed on the structure; and
forming a cap on the phase change material and silicon material in a same chamber in which the formation of the phase change material occurs and such that the cap is in contact with both the phase change material and silicon material.
5. The method of claim 4 , wherein forming the phase change material includes reacting a germanium amidinate with NH 3 .
6. The method of claim 4 , wherein forming the phase change material includes reacting Sb(OR) 3 with NH 3 , wherein R is an alkyl.
7. The method of claim 4 , wherein forming the phase change material includes reacting Te(OR) 4 with NH 3 , wherein R is an alkyl.
8. The method of claim 4 , wherein forming the phase change material includes reacting Ge(NR 2 ) 4 with NH 3 , wherein R is an alkyl.
9. The method of claim 4 , wherein forming the phase change material includes reacting Sb(OR) 3 with NH 3 , wherein R is an alkyl.
10. The method of claim 4 , wherein the method includes forming the phase change material in the opening such that the phase change material is not in contact with the silicon material.
11. A method of semiconductor processing, comprising:
forming a structure on a substrate, wherein the substrate includes an electrode;
forming a silicon material on the structure;
forming an opening through the silicon material and the structure;
forming, in a selective area, a resistance variable material in the opening such that the resistance variable material is not in contact with the silicon material; and
forming a cap in situ on the resistance variable material and silicon material such that the cap is in contact with both the resistance variable material and silicon material.
12. The method of claim 11 , wherein:
a surface of the electrode defines a bottom of the opening;
a first surface of the structure and a first surface of the silicon material define a first sidewall of the opening; and
a second surface of the structure and a second surface of the silicon material define a second sidewall of the opening.
13. The method of claim 12 , wherein the method includes forming the resistance variable material in the opening such that the resistance variable material covers the bottom of the opening and the first and second surfaces of the structure but not the first and second surfaces of the silicon material.
14. The method of claim 12 , wherein the method includes forming the resistance variable material in the opening such that the resistance variable material fills a portion of the opening formed by the bottom of the opening and the first and second surfaces of the structure.
15. The method of claim 11 , wherein the resistance variable material is formed in the opening after the silicon material is formed on the structure.
16. The method of claim 11 , wherein the method does not include removing or patterning any portion of the resistance variable material.
17. The method of claim 11 , wherein forming the resistance variable material in the opening includes performing a number of sequential surface reactions.