Resistance variable memory with temperature tolerant materials
View Patent ↗A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of forming such a memory device.
1. A memory device, comprising:
a first electrode;
a second electrode;
a Sb 2 Se 3 glass material between said first electrode and said second electrode; and
a metal-chalcogenide material between said Sb 2 Se 3 glass material and said second electrode,
wherein said Sb 2 Se 3 glass material and said metal-chalcogenide material are provided within a via.
2. The memory device of claim 1 , further comprising a metal-containing material between said metal-chalcogenide material and said second electrode.
3. The memory device of claim 1 , wherein said metal-chalcogenide material comprises tin selenide.
4. The memory device of claim 1 , wherein said metal-chalcogenide material comprises silver selenide.
5. The memory device of claim 1 , further comprising:
a first chalcogenide glass material between said metal-chalcogenide material and said second electrode;
a metal-containing material between said first chalcogenide glass material and said second electrode; and
a second chalcogenide glass material between said metal-containing material and said second electrode.
6. The memory device of claim 5 , wherein said metal-chalcogenide material comprises Ag 2 Se, wherein said first chalcogenide glass material and said second chalcogenide glass material, comprise Ge 40 Se 60 , and wherein said metal-containing material comprises at least one of silver and antimony.
7. The memory device of claim 1 , wherein said second electrode defines the location of said memory device over a substrate.
8. The memory device of claim 1 , wherein said Sb 2 Se 3 glass material has a conducting channel therein.
9. The memory device of claim 8 , wherein said conducting channel comprises material from said metal-chalcogenide material.
10. The memory device of claim 1 , wherein a conductive pathway within said Sb 2 Se 3 glass material provides a higher conductivity memory state for said memory device.
11. The memory device of claim 10 , wherein said conductive pathway comprises at least one of antimony and silver.
12. A method of forming a resistance variable memory device, comprising:
providing a substrate;
providing a first electrode over said substrate;
providing a second electrode over said substrate;
forming a Sb 2 Se 3 glass material in a via between said first electrode and said second electrode; and
forming a metal-chalcogenide material in said via and between said Sb 2 Se 3 glass material and said second electrode.
13. The method of claim 12 , further comprising providing an address line electrically connected with said first electrode.
14. The method of claim 12 , wherein said address line and said first electrode are the same layer.
15. The method of claim 12 , further comprising forming a metal material between said metal-chalcogenide material and said second electrode.
16. The method of claim 15 , further comprising forming a first chalcogenide glass material between said metal-chalcogenide material and said second electrode.
17. The method of claim 16 , further comprising forming a second chalcogenide glass material between said metal material and said second electrode.
18. The method of claim 17 , wherein at least one of said first chalcogenide glass material and said second chalcogenide glass material comprises germanium selenide.
19. The method of claim 18 , wherein said germanium selenide has a stoichiometry of about Ge 40 Se 60 .
20. The method of claim 15 , wherein said metal material comprises at least one of antimony and silver.
21. The method of claim 12 , wherein said metal-chalcogenide material comprises tin selenide.
22. The method of claim 12 , wherein said metal-chalcogenide material comprises silver selenide.
23. The method of claim 12 , further comprising forming a conducting channel within said Sb 2 Se 3 glass material with a conditioning step.
24. The method of claim 23 , wherein said conditioning step comprises applying a voltage pulse across said Sb 2 Se 3 glass material and said metal-chalcogenide material.
25. The method of claim 23 , further comprising forming a conductive pathway at said conducting channel.
26. A memory device, comprising:
a first electrode;
a second electrode;
a Sb 2 Se 3 glass material between said first electrode and said second electrode; and
a metal-chalcogenide material between said Sb 2 Se 3 glass material and said second electrode,
wherein the location of said second electrode defines the location of said memory device over a substrate.
27. The memory device of claim 26 , wherein at least one of said first electrode, said Sb 2 Se 3 glass material, and said metal-chalcogenide material is a blanket layer.
28. The memory device of claim 26 , wherein each of said first electrode, said Sb 2 Se 3 glass material, and said metal-chalcogenide material are blanket layers.
29. The memory device of claim 26 , further comprising a metal-containing material between said metal-chalcogenide material and said second electrode.
30. The memory device of claim 26 , wherein said metal-chalcogenide material comprises tin selenide.
31. The memory device of claim 26 , wherein said metal-chalcogenide material comprises silver selenide.
32. The memory device of claim 26 , further comprising:
a first chalcogenide glass material between said metal-chalcogenide material and said second electrode;
a metal-containing material between said first chalcogenide glass material and said second electrode; and
a second chalcogenide glass material between said metal-containing material and said second electrode.
33. The memory device of claim 32 , wherein said metal-chalcogenide material comprises Ag 2 Se, wherein said first chalcogenide glass material and said second chalcogenide glass material, comprise Ge 40 Se 60 , and wherein said metal-containing material comprises at least one of silver and antimony.
34. The memory device of claim 26 , wherein said Sb 2 Se 3 glass material has a conducting channel therein.
35. The memory device of claim 34 , wherein said conducting channel comprises material from said metal-chalcogenide material.
36. The memory device of claim 26 , wherein a conductive pathway within said Sb 2 Se 3 glass material provides a higher conductivity memory state for said memory device.
37. The memory device of claim 36 , wherein said conductive pathway comprises at least one of antimony and silver.