Resistance variable memory with temperature tolerant materials

1. A memory device, comprising:

a first electrode;

a second electrode;

a Sb 2 Se 3 glass layer between said first electrode and said second electrode; and

a metal-chalcogenide layer between said first electrode and said second electrode, wherein said metal-chalcogenide layer comprises tin selenide.

2. The memory device of claim 1 ,

wherein said memory device comprises a programmable conductive random access memory device.

3. A processor system, comprising:

a processor; and

a memory device, said memory device comprising a first electrode, a second electrode, a Sb 2 Se 3 glass layer between said first electrode and said second electrode, and a metal-chalcogenide layer between said first electrode and said second electrode, wherein said metal-chalcogenide layer comprises tin selenide.

4. The processor system of claim 3 , wherein said metal-chalcogenide layer is between said Sb 2 Se 3 glass layer and said second electrode.

5. The processor system of claim 4 , further comprising a metal-containing layer between said metal-chalcogenide layer and said second electrode.

6. The processor system of claim 3 , wherein said metal-chalcogenide layer comprises silver selenide.

7. The processor system of claim 3 , wherein said memory device comprises a programmable conductive random access memory device.

8. The processor system of claim 3 , wherein said Sb 2 Se 3 glass layer has a conducting channel therein.

9. The processor system of claim 3 , wherein said conducting channel comprises material from said metal-chalcogenide layer.

10. The processor system device of claim 3 , wherein a conductive pathway in said Sb 2 Se 3 glass layer provides a higher conductivity memory state for said memory device.

11. The processor system of claim 10 , wherein said conductive pathway comprises silver.