Methods of forming phase change materials and methods of forming phase change memory circuitry
View Patent ↗A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.
1. A method of forming a phase change material comprising germanium and tellurium, comprising:
depositing a germanium-comprising material over a substrate utilizing at least one germanium precursor selected from GeH4, tetrakis dialkylamido germanium and bis-ditertbutyl germanium amidinate, and utilizing a reducing precursor to promote the elemental-form germanium to form the germanium-comprising layer to consist of elemental germanium; and
flowing a gaseous tellurium-comprising precursor selected from the group consisting of TeH 2 , ditertbutyl telluride, tellurium IV ethoxide, tetrakis dimethylamido tellurium and combinations thereof to the germanium-comprising material and removing tellurium from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of the phase change material over the substrate.
2. The method of claim 1 being self-limiting to formation of the germanium and tellurium-comprising compound, and comprising continuing the flowing of the gaseous precursor to the germanium-comprising material at least until no more of the compound is formed whereby the forming of the germanium and tellurium-comprising compound self-limits in thickness from said flowing.
3. The method of claim 2 comprising continuing said flowing for at least 10 seconds after no more of said compound is formed.
4. The method of claim 3 comprising removing tellurium from the gaseous precursor at least after no more of said compound is formed.
5. The method of claim 1 comprising, after the flowing:
depositing more of the germanium-comprising material which comprises the elemental-form germanium; and
after said depositing of more of the germanium-comprising material, flowing the gaseous tellurium-comprising precursor to the germanium-comprising material which removes tellurium to react with the elemental-form germanium to form the germanium and tellurium-comprising compound.
6. The method of claim 1 comprising repeating said depositing and said flowing at least once.
7. The method of claim 1 comprising repeating said depositing and said flowing more than once.
8. The method of claim 7 wherein each depositing of germanium-comprising material forms a layer that has a thickness of between 1 Angstrom and 20 Angstroms.
9. The method of claim 1 wherein said depositing and said flowing comprise a cycle, wherein a thickness of the phase change material formed from the flowing is at least 50% greater than a thickness of the deposited germanium-comprising material to which the gaseous tellurium comprising material is flowed in the cycle.
10. The method of claim 9 wherein the thickness of the phase change material formed from the flowing is at least 100% greater than the thickness of the deposited germanium-comprising material to which the gaseous tellurium comprising material is flowed in the cycle.
11. The method of claim 1 wherein the tellurium-comprising precursor is organic.
12. The method of claim 11 wherein the tellurium-comprising precursor is void of NR 2 , where R is organic.
13. The method of claim 1 wherein the tellurium-comprising precursor is inorganic.
14. The method of claim 1 wherein the tellurium-comprising precursor is void of nitrogen.
15. The method of claim 1 wherein the germanium-comprising material comprises antimony, and the germanium and tellurium-comprising compound comprises antimony.
16. A method of forming a phase change material comprising germanium and tellurium, comprising:
forming an opening into material of a substrate;
lining the opening with a germanium-comprising material utilizing at least one germanium precursor selected from GeH4, tetrakis dialkylamido germanium and bis-ditertbutyl germanium amidinate, the germanium-comprising material being received over the material outside of the opening, the germanium-comprising material comprising elemental-form germanium, and utilizing a reducing precursor to promote the elemental-form germanium that consists of elemental germanium;
flowing a gaseous tellurium-comprising precursor selected from the group consisting of TeH 2 , ditertbutyl telluride, tellurium IV ethoxide, tetrakis dimethylamido tellurium and combinations thereof to the germanium-comprising material within the opening and outside of the opening and removing tellurium from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of the phase change material; wherein the flowing of the gaseous tellurium-comprising precursor is continued beyond a point where no more of the germanium and tellurium-comprising compound is formed outside of the opening but continues to be formed within the opening whereby the forming of the germanium and tellurium-comprising compound self-limits in thickness from said flowing.
17. The method of claim 16 comprising continuing said flowing for at least 10 seconds after no more of said compound is formed within the opening.
18. The method of claim 16 comprising removing tellurium from the gaseous precursor outside of the opening at least after no more of said compound is formed outside of the opening.