Memory cell structures
View Patent ↗The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode.
1. A memory cell, comprising:
a resistance variable material formed on a first electrode, wherein the first electrode has non-vertical sidewalls;
a first dielectric material formed on a top surface of the resistance variable material and having a valley formed therein; and
a contact portion of a second electrode formed in the valley such that the contact portion has non-vertical sidewalls defined by the valley.
2. The memory cell of claim 1 , wherein a remaining portion of the second electrode is formed over the contact portion of the second electrode within the valley such that the remaining portion of the second electrode has non-vertical sidewalls defined by the valley.
3. The memory cell of claim 1 , wherein the first electrode is a bottom electrode and a second dielectric material with non-vertical sidewalls is formed in a valley between the bottom electrode and an adjacent bottom electrode.
4. The memory cell of claim 1 , wherein the first electrode is a bottom electrode conductor line.
5. The memory cell of claim 1 , wherein the resistance variable material is formed on a peak of the first electrode.
6. The memory cell of claim 1 , wherein the resistance variable material is formed on a blunted peak of the first electrode.
7. The memory cell of claim 1 , wherein a contact portion of the first electrode with the resistance variable material is defined by the non-vertical sidewalls of the first electrode.
8. A memory cell, comprising:
a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode;
a second electrode having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is formed on an angled sidewall of a first dielectric material; and
a storage element between the first electrode and an electrode contact portion of the second electrode, wherein the first dielectric material is formed on a top surface of the storage element.
9. The memory cell of claim 8 , wherein the electrode contact portion of the second electrode has sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode.
10. The memory cell of claim 8 , wherein the first electrode has a trapezoidal cross-sectional area and sidewalls that are selected from the group consisting of straight, concave, and convex.
11. The memory cell of claim 10 , wherein a top surface of the trapezoidal cross-sectional area of the first electrode is an electrode contact portion of the first electrode and is in contact with the storage element.
12. The memory cell of claim 8 , wherein the first electrode has a triangular cross-sectional area and sidewalls that are selected from the group consisting of straight, concave, and convex sidewalls.
13. The memory cell of claim 8 , wherein the storage element includes a resistance variable material and a select device.
14. The memory cell of claim 8 , wherein the sidewalls of the electrode contact portion converge toward the storage element.
15. The memory cell of claim 14 , wherein an active region of the memory cell is between an apex of the first electrode and an apex of the electrode contact portion of the second electrode.
16. A memory cell, comprising:
a resistance variable material formed on a peak of a first electrode having angled sidewalls such that the resistance variable material includes a peak and angled sidewalls;
a first dielectric material formed on the resistance variable material and having a valley formed therein, wherein the valley includes angled sidewalls converging towards the peak; and
a second electrode formed in the valley such that the second electrode has angled sidewalls defined by the valley.
17. The memory cell of claim 16 , wherein the second electrode includes a contact portion that is formed in the valley.
18. The memory cell of claim 17 , wherein the contact portion of the second electrode is formed on the peak of the resistance variable material and overlaps the sidewalls of the resistance variable material.
19. The memory cell of claim 17 , wherein a surface area of contact between the contact portion of the second electrode and the resistance variable material is defined by the sidewalls of the resistance variable material.
20. The memory cell of claim 17 , wherein the angled sidewalls of the contact portion of the second electrode are angled about 10 degrees to about 80 degrees in relation to a bottom surface of the first dielectric material.